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    Untitled

    Abstract: No abstract text available
    Text: 51E 5 • Ôl3bb71 000377b 070 M S E K G seMIKRDN SEfäKRÖN- INC Maximum Ratings Symbol Conditions VcEVsus lc = 1 A , Vbe = - 2 V > CM I II UJ CD > VcBO Ie = lc Units 1200 V 1200 V 1200 V I VcEV Values 7 V lc D. C. 300 A If = - lc D. C. 300 A V ebo = Ib Ptot


    OCR Scan     		PDF l3bb71 000377b 111iii! fll3bb71 T-33-35

    MQ02

    Abstract: cga to vga 6845 crt controller imsg171 HGC hercules 6845 8bit vga controller CL-GD610 crt controller 6845 gd510 cga to vga circuits
    Text: CIRRUS LOGIC INC blE D 213bb3T 000377b 202 « C I R CL-GD610/620-C D ata Sheet 'CIRRUS LOGIC ' ' ' ' p 3 2 ' 3 3 - ' JJ 5 FEATURES • Supports dual-scan and slngle-scan LCD panels ■ Supports gas plasma and EL panels Flat Panel/CRT Enhanced VGA Controller


    OCR Scan     		PDF 213bb3T 000377b CL-GD610/620-C 19-resolution 16-blt CL-GD610 -32QC-C GD620 MQ02 cga to vga 6845 crt controller imsg171 HGC hercules 6845 8bit vga controller crt controller 6845 gd510 cga to vga circuits

    Untitled

    Abstract: No abstract text available
    Text: IBM11D4325B IBM11D8325B 4M/8M x 32 DRAM Module Features • 72-Pin JEDEC Standard Single-In-Line Memory Module • Performance: -60 -70 tRAC I RAS Access Time 60ns 70ns tcAC ! CAS Access Time 15ns 2 0 W ¡Access Time From Address 30ns 35ns tRC ¡CycleTime


    OCR Scan     		PDF IBM11D4325B IBM11D8325B 72-Pin 104ns 124ns 000377b 26H3207 26H3208)

    Untitled

    Abstract: No abstract text available
    Text: H Y 6 2 V 8 1 0 0 A S e r ie s 128Kx8-blt CMOS SRAM »HYUNDAI PRELIMINARY DESCRIPTION The HY62V8100A is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. The HY62V8100A has a data retention mode that


    OCR Scan     		PDF 128Kx8-blt HY62V8100A 55/70/85/100ns 100/120/150/200ns 1DD04-11-MAY94 GG3773 HY62V8100ALP

    MMI67401

    Abstract: No abstract text available
    Text: INTEGRATED DEVICE il!!*# IntegratedDeviceTèchndogy,Inc 14E D 4Ô55771 00Ü377S 3 ^ C M O S PARALLEL FIFO 64 x 4-B IT AND 64 x 5-B IT . : • FEATURES: • First-ln/Flrst-Out dual-port memory • 64 x 4 organization IDT72401/03) • 64 x 5 organization (IDT72402/04)


    OCR Scan     		PDF IDT72401/03) IDT72402/04) IDT72401/02 MMI67401/02 175mW shift-rate--45MHz 35MHz IDT72403/04 IDT72401/02/03/04 MIL-STD-883, MMI67401

    2M2222A

    Abstract: pj 1349 fxp ERI - 35 - 2 YE 0515 TRANSFORMER 2m2222 cmps a42 transistor TTL 74LSxx dg 2n60 diode cross reference PJ32 fj series capacitor 3uF 600V STB523
    Text: W tipt H E W L E T T mL'HM P AC KAR D HP 1000 M/E/F-Series Computers Engineering and Reference Documentation HEWLETT-PACKARD COMPANY Data Systems Division 11000 Wolfe Road Cupertino, California 95014 MANUAL PART NO. 92851-90001 Printed in U.S.A. March 1981


    OCR Scan     		PDF 2991A 2M2222A pj 1349 fxp ERI - 35 - 2 YE 0515 TRANSFORMER 2m2222 cmps a42 transistor TTL 74LSxx dg 2n60 diode cross reference PJ32 fj series capacitor 3uF 600V STB523

    csr bc4

    Abstract: No abstract text available
    Text: MOSEL VITELIC PRELIMINARY V408J232 2M x 32 HIGH PERFORMANCE EDO MEMORY MODULE Features Description • 2,097,152 x 32 bit organization ■ Utilizes High Performance 1M x 4 C M O S DRAMs ■ Fast access times: 45, 50 or 60 ns ■ Fast Page mode with Extended D ata Out


    OCR Scan     		PDF V408J232 72-lead V408J232 b353311 00G37Ã csr bc4