Vinculum II Memory Management
Abstract: AppNotes C2101
Text: Future Technology Devices International Ltd. Vinculum II Memory Management Application Note AN_157 Document Reference No.: FT_000352 Version 1.2 Issue Date: 2010-11-26 This application note discusses methods for efficient use of RAM in Vinculum-II VNC2 applications.
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SC136640
Vinculum II Memory Management
AppNotes
C2101
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PF3AB
Abstract: hd6370 series HD63B03XP hd63b01yop HD6303 HD63701VOP LM200 lcd HD6301 HD63B03RP L9430
Text: -, . jo,;-: ~ . .' ;~': ,-. " . :. . HD6301 iHD6303 SERIES HANDBOOK • USER'S MANUALS: o t! 1) @ HD6301 V1 IHD6303R HD63701V HD6301XO/HD6303X/HD63701XO HD6301 YO/HD6303Y IHD63701 YO III SOFTWARE APPLICATION NOTES til HARDWARE APPLICATION NOTES II C LANGUAGE PROGRAMMING TECHNIOUES
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HD6301
iHD6303
IHD6303R
HD63701V
HD6301XO/HD6303X/HD63701XO
YO/HD6303Y
IHD63701
PF3AB
hd6370 series
HD63B03XP
hd63b01yop
HD6303
HD63701VOP
LM200 lcd
HD63B03RP
L9430
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vinculum
Abstract: No abstract text available
Text: Future Technology Devices International Ltd. Vinculum II Memory Management Application Note AN_157 Document Reference No.: FT_000352 Version 1.1 Issue Date: 2010-11-01 This application note discusses methods for efficient use of RAM in Vinculum-II VNC2 applications.
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20Errata
20Technical
20Note
vinculum
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fuse code Jd 0,7A
Abstract: odv marking PM5323 PM5344 PM5361 PM5371 TU12
Text: S tan d a r d PM I / I P roduct _ _ _ PRELIMINARY INFORMATION P M C -S ie rra , Inc. PM5361 TUPP SONET/SDH TRIBUTARY UNIT PAYLOAD PROCESSOR FEA TU R ES • Configurable, multi-channel, payload processor for alignment of SONET virtual tributaries VTs or SDH tributary units (TUs). Processes an STS-3 or STM-1 byte
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PM5361
920526S7
920102S8
0GD2447
fuse code Jd 0,7A
odv marking
PM5323
PM5344
PM5371
TU12
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PE255
Abstract: OC44
Text: CYM1910 PRELIMINARY CYPRESS ~ ~ ~ ~ — - —. — - - • SEMICONDUCTOR 16K x 68 SRAM Module Features Functional Description • T h e C Y M 1 9 1 0 is a v ery h ig h p e rfo rm a n c e 1 -m egabit s ta tic R A M m o d u le o rg a n iz e d as 16K w o rd s by 68 bits. T h is
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CYM1910
1910PV-25C
CYM1910PV-35C
CYM1910PV-45C
-00023-A
PE255
OC44
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11A9
Abstract: MSM8128
Text: mosaic 128K x 8 SRAM MSM8128-45/55 semiconductor, inc. Issue 4.1 : JUNE 1996 131,072 x 8 CMOS High Speed Static RAM Description ^ Features The MSM8128 is a 1Mbit monolithic SRAM organised as 128Kx8 available wiith access times of 45 / 55 ns. The device is available in three
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MSM8128
128Kx8
MIL-STD-883.
MSM8128-45/55
MSM8128SLMB-45
MIL-STD-883
b3S337^
11A9
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a708a
Abstract: aplc-2 audio ic 1895 bel pin configuration 1B5a on5252 1d77 1D0900 FC817 MP 1009 es storeo volume control circuit
Text: CHAPTER 1 GENERAL Page 1.1 Descriptive Expressions Used in This M a n u a l . 1.2 Sample Program F o r m a t . . 1.3 How to Read Subroutine Lists . 1-1 1-4 1-6 APPENDIX 1-7 Sample L i s t . . .
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HX-20
HD6301
64K-byte
05E216)
063C16)
a708a
aplc-2
audio ic 1895 bel pin configuration
1B5a
on5252
1d77
1D0900
FC817
MP 1009 es
storeo volume control circuit
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CYM1910
Abstract: No abstract text available
Text: CYM1910 PRELIM INARY CYPRESS ~~ . SEMICONDUCTOR 16K x 68 SRAM Module Features Functional Description • High-density t-m egabit SRAM module T h e CYM 1910 is a very high perform ance 1-megabit static R A M m odule organized as 16K words by 68 bits. This
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CYM1910
1910PV
1910PV-35C
1910PV-45C
-00023-A
CYM1910
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DP0921
Abstract: No abstract text available
Text: FEA TU RES • 400-450 MHz ■ ± 2.8 Deg. Phase Accuracy ■ 2 mA, +5 VDC ■ 40 nSec Switching Speed ■ TTL Control ■ 38 Pin DIP MODEL NO. DP0921 V *J 6 Section Phase Shifter RF IN/OUT GND ■ GND I i£T 1 2 +5V GND I i 1 1 <? Ì 3 4 5 6 GND N/C C O N TI GND
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DP0921
LEAD-38
Hz/150
DP0921
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Atmel 318
Abstract: AT29C512 ATMEL 536 8 pin IC
Text: S3E ì> • 1074177 000237H 133 ■ A T U AT29C512 ATMEL CORP Features • • • • • • • • • • • • Fast Read Access Time • 90 ns Five-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram Erase and Program 512 Sectors (128 bytes/sector)
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000237H
AT29C512
10-Year
Atmel 318
AT29C512
ATMEL 536 8 pin IC
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