Untitled
Abstract: No abstract text available
Text: ADAPTEC INC -m’ •wi A I 1j C ; ' - MME D E3 OSlMMlb 000203b «ì E3AAC 'm 7 1 6 Single-Chip PC XT/AT M a ss Storage Controller DATA BUFFER SRAM 256K MAX DRAM IM MAX 11 MB/sec 3.5/2.5 INCH HARD DISK AIC-7160 8 MB/sec MASS STORAGE CONTROLLER AT BUS 32 Mb/sec
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000203b
AIC-7160
80C196
68HC11
AIC-7160
88-bit
56-bit
32-bit
AIC-6160/6060
AIC7160
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Untitled
Abstract: No abstract text available
Text: QS723620 Ô High-Speed CMOS 1 K X 3 6 Clocked FIFO with Bus Sizing QS723620 FEATURES • Fast cycle times: 20/25/30 ns • Selectable 36/18/9-bit word width for both input port and output port • Byte-order-reversal function i.e., “big-endian” o “little-endian” conversion
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QS723620
36/18/9-bit
16-mA-loL
132-Pin
MDSF-00020-00
74bbfl03
DDD50SÔ
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RP65C02
Abstract: RP65C02G 65c02 6502 MPU 65c02 ricoh
Text: RICOH CORP/ ELECTRONIC III 54E D • 7744btHD DDGED12 E T I B P C H / CMOS 8 b it MPU R P 6 5 C 0 2 G / G - 0 6 PIN C O N F IG U R A T IO N TOP VIEW ■ G ENERAL DESCRIPTION The RP65C02 is 8-bit CMOS MPU. It has the instruction set and pins which are fully compatible with the NMOS
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7744btH
DDGED12
RP65C02
68-type
13-type
7744fc
000203b
09fimax
RP65C02G
65c02
6502 MPU
65c02 ricoh
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FRS300BA50
Abstract: No abstract text available
Text: DIODE M ODULE f.r.d FRS300BA50 UL; E76102 (M) F R S 3 0 0 B A is a high speed isolated diode module designed for high power switching application. F R S 3 0 0 B A is suitable for high frequency application requiring low loss and high speed control. • •
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FRS300BA50
E76102
000203b
FRS300BA50
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LTL-4221
Abstract: LTL-4231 LTL-4251 c4231 4202N
Text: LITE-ON INC B1E Î D SS3b3b7 0Q0S031 T *LTN T-l 3mm SOLID STATE LAMPS LTL-4201/4201N RED -LTL-4211/4211N BRIGHT RED .LTL-4221/4221N HIGH EFFICIENCY RED LTL-4231/4231N GREEN LTL-4251/4251N YELLOW LTL-4291 /4291N ORANGE FEATURES • LOW POWER CONSUMPTION,
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0GQE031
201/4201N
LTL-4211/4211N
LTL-4221
/4221N
LTL-4231
/4231N
LTL-4251
/4251N
LTL-4291/4291N
c4231
4202N
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Untitled
Abstract: No abstract text available
Text: h Preliminary BENCHMARQ l3 C |2 0 4 0 Gas Gauge 1C With SMBus Interface Features General Description ► Provides conservative and repeatable measurement of available charge in NiCd, NiMH, and lithium Ion rechargeable batteries The bq2040 Gas Gauge IC With
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bq2040
120nA
bq2040
16-pin
137flfln
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FF 75 R 1200 KL
Abstract: kl diode
Text: FF 75 R 12 KL Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values V ces Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0 ,1 RthJC DC, pro Baustein / per module 0 ,2
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Hall Siemens ksy10
Abstract: 131 hall sensor magnetic field sensor siemens hall sensor 80 L magnetic pickup sensor KSY10 magnetic pickup speed sensor R20 marking Siemens Hall hall sensor ksy 11
Text: SIEMENS K SY10 Hall Sensor Features • • • • • High sensitivity High operating temperature range High linearity Low offset voltage Low TC of sensitivity and internal resistance • Plastic-encapsulated miniature package 0.15 H 0 .1 5 0 . 1 5 * 0,07
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KSY10
235LD5
D0flEfl37
Hall Siemens ksy10
131 hall sensor
magnetic field sensor siemens
hall sensor 80 L
magnetic pickup sensor
KSY10
magnetic pickup speed sensor
R20 marking
Siemens Hall
hall sensor ksy 11
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Untitled
Abstract: No abstract text available
Text: I f l 2 3 Sb 0 5 0002020 321 SIEM ENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C515/80C535 Prelim inary SAB 80C515/80C515-16 SAB 80C535/80C535-16 • 8 Kx 8 CMOS microcontroller with factory mask-programmable ROM CMOS microcontroller for external ROM
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80C515/80C535
80C515/80C515-16
80C535/80C535-16
80C515
16-bit
MQFP-80
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Untitled
Abstract: No abstract text available
Text: FF 75 R 12 KL T h erm isch e Eigenschaften Transistor T ran sistor R thJC Elektrische Eig ensch aften Electrical properties Höchstzulässige W erte Maximum rated values V ces Ic R thC K 1200 V 75 A Therm al properties DC, pro Baustein / per module DC, pro Baustein / per module
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LED Diode CXC
Abstract: No abstract text available
Text: WESTCODE SEMICONDUCTORS SWxxC/DXC680 Capsule Rectifier Diode C o nsists of a diffused silicon ele m e n t m ounted in an he rm etic ce ra m ic cold w e lde d capsule. A vaila ble in industry stan dard and thin housings. Ratings ^R R M v RSM Unless otherwise stated Tj = 160°C
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SWxxC/DXC680
305324EC
425432E-0
000203b
LED Diode CXC
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25CC
Abstract: 256kx8 sram
Text: WDI EDI8F8257C 256Kx8 SRAM Module ELECTRONIC DESIGNS. INC 256Kx8 Static RAM CMOS, Module The EDI8F8257C is a two megabit CMOS Static RAM based on Features two 128Kx8 Static RAMs mounted on a multi-layered epoxy 256Kx8 bit CMOS Static laminate FR4 substrate.
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EDI8F8257C
256Kx8
100ns
EDI8F8257C
128Kx8
EDI8F8257C70BPC
EDI8F8257C70BPI.
25CC
256kx8 sram
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SWT200K
Abstract: SWT080K J180 GS035
Text: SÛUARE D CO/ GENERAL ^5 3 9 1 8 5 9 0 GENERAL SEMICONDUCTOR D ÔS2SSDÛ 0G G 20 35 95D 0 2 0 3 5 U N ID IR E C T IO N A L ^ General ^ Semiconductor J^L « Industries, Inc. FEATURES Up to 400A Peak Pulse Current High Holding Current Nanosecond Response Time
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GS035
50/60Hz)
50/60Hz,
SWT080K:
SWT200K:
SWT200K
SWT080K
J180
GS035
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GAL20XV10B-20LP
Abstract: ali 1631 GAL20XV10B SOCN ICE 47E
Text: LATTICE SEMICONDUCTOR M7E D 530^4^ Lattice DDDSG32 ILAT 4 G A L20XV10B T - 1/ 6 -1 9 - 0 7 High-Speed E’CMOS PLD Generic Array Logic FU N CTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E*CMOS* TECHNOLOGY — 10 ns Maximum Propagation Delay — Fmax = 100 MHz
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GAL20XV10B
53Abci4cÃ
DD2Q47
GAL20XV10B-20LP
ali 1631
SOCN
ICE 47E
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