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    Ba 33 bco

    Abstract: No abstract text available
    Text: NN5216 4 0 5 / NN5216805 series CMOS 16Mbit 2,097,152 words x 4 bits x 2 banks CMOS 16Mbit (1,048,576 words x 8 bits x 2 banks) Synchronous Dynam ic RAM _ .W Preliminary Specification DESCRIPTION This product is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) organized as 2,097,152 words


    OCR Scan     		PDF NN5216 NN5216805 16Mbit NN5216405) NN5216805) 0QQlb27 NN5216405/ Ba 33 bco

    Untitled

    Abstract: No abstract text available
    Text: ^EDI _ EDI8F8259C Electronic Designs Inc. Commercial Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8F8259C is a 2 megabit CMOS Static RAM based on two high speed 256Kx4 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate.


    OCR Scan     		PDF EDI8F8259C 256Kx8 EDI8F8259C 256Kx4

    Untitled

    Abstract: No abstract text available
    Text: Illl = ^ i Illl 2N3209CSM SEME LAB HIGH SPEED, PNR SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.51 ±0.10 t (0.02 ± 0.004) H 0.31 (0.012)


    OCR Scan     		PDF 2N3209CSM 100MHz 0001ST0