000131B Search Results

Contextual Info: FASCO INKS/ SENISYS 40E D B 341=1736 000131b b B S E N I CLED191 Series_ Gallium Arsenide Infrared Emitting Diodes Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • • • Storage +100°C

c3781

Abstract: CLED191A CLED191B CLED191C CLT590 L004 2s43
Contextual Info: * FASCO INDS/ SE N I S Y S 34^730 40E D 000131b hr^SENI IEEEQI3B CLED191 Series m -U Gallium Arsenide Infrared Emitting Diodes Features Absolute M axim um Ratings Ta = 25°C unless otherwise stated. • • • • Storage Temperature. -40°C to +100°C

DA0236

Contextual Info: DAICO INDUST RIES INC RF IN/OUT 1 T E QND QND GND ® JJ7 0- DA0236 1 SECTION ATTENUATOR I ® 3i GND — h WÊ " T - l 1“ 11 -O 1 -<T RF IN/OUT <fT - > EbQMTEO 000131b » A — • Built-in C M O S compatible driver 7 ) • Sm all size © © CON TROL GND

Contextual Info: 30 Watt NT Series Single Output F ea tu res • Only 2.02" x 1.62" x 0.55" high ■ -40° to +90°C case operating range standard ■ Very low OFF current, 1 mA typically ■ 1544 VDC input-output isolation per UL1459 ■ Transient overvoltage protected output

Contextual Info: CDilL DO-41 General Purpose Zener Diodes 1 W Electrical Characteristics (At Ta=25°C, Unless Otherwise Specified) Type No. Vzr at l^ min nom (V) rZT ^ZT a t 'z T max max (Ohm) (mA) Temp. Coeff. of Zener Voltage typ (%/°C) a* V r Ta 25°C max (MA) 'r V r

rza series

Abstract: Calex chemi-con rz series 48S5.5000NT Nichicon pr series 2500N1 A77 transformer
Contextual Info: 30 Watt NT Series Features • Only 2.02" x 1.62" x 0.55" high ■ -40° to +90°C case operating range standard ■ Very low OFF current, 1 mA typically ■ 1544 VDC input-output isolation per UL1459 ■ Transient overvoltage protected output ■ Overcurrent and overtemperature protection

83010

Contextual Info: TD2bfl72 D D D 1 31 S 025 • T H C H 7 - S'/- /O- SSE D O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX TH0 H S0 N MIL ET S P A T I A U X TS 83010 CMOS 10-BIT, 20 MHz FLASH A/D CONVERTER DESCRIPTION The TS 83010 is a m o n o lith ic CM O S 10 b it p a ra lle l fla s h

BTS 177

Abstract: 131S E3043 E3062A GPT05904 GPTD5165 Q67060-S6700-A2 Q67060-S6700-A3 Q67060-S6700-A4 BTS current sense siemens
Contextual Info: flS3SbDS 00Ô1314 =lû3 SIEM ENS HITFET BTS 917 Smart Lowside Power Switch Product Summary Features • Logic Level Input Continious drain source voltage • Input protection ESD On-state resistance • Thermal shutdown Current limitation • Overload protection

transistor CD 910

Abstract: transistor 1317 TIP110A
Contextual Info: ISemiconductor TIP110A PN P Epitaxial Silicon Transistor MEDI UM P OWE R LI NEAR S WI TCHI NG APPLI CATI ONS • Collector current 10A • Collector dissipation Pc =75W Tc = 25 “c [ ABSOLUTE MA X I MU M RATI NGS ITa = 2 5 *C> I Symbol Rating Unit VcBO

VM0870

Abstract: BM45-12 B3-12 B15-12 DDD1317 VMOB70-2 VCC125
Contextual Info: 0182998 ACRIAN INC DlñSTTñ 000131S Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating JunctionTemperature D T'-SJ-/*- us VMOB70 GENERAL DESCRIPTION

DS936

Abstract: c936 radar scheme CLC936A8C CLC936AC P5MB
Contextual Info: STE D COMLINEAR CORP 257^101 000130b 147 € 12-Bit, 20MSPS A/D Converter CLC936 Comlinear Corporation ICMN 7 -S " 7 -7 ö ~ I ^ » 'S 1« ! » * . * FEATURES typical : • 71 dB spurious free signal range; fIN=4.97MHz • no missing codes guaranteed • 0.7LSB differential linearity

Contextual Info: ASAHI KASEI [AK8428] □Bi-level Image processing Error diffusion •12 bit arithemetic processing internally 4 x 4 , 8 x 8 dithering •3 types fixed dithering pattern included :Bayer, Uzumaki, Amiten •Interface with the external ROH/PLD for other patterns

tektronix C1001

Abstract: CVA3407T FHD400 T11A 1P23
Contextual Info: # Low Cost Triple CRT Driver w U IO O IW CORPORATION * \J CVA3407T FEATURES DESCRIPTION • • • • • • The CVA3407T contains three high impedance wideband amplifiers, designed specifically to drive a CRT. It features no crossover distortion for excellent gray scale linearity. This device

Contextual Info: TIP110A PNP Epitaxial Silicon Transistor Semiconductor MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Collector dissipation Pc =75W Tc = 25 “c (ABSOLUTE MAXIMUM RATINGS <Ta = 2 5 K\ I Symbol Rating Unit Collector-Base Voltage V CBO -20 V Collector-Emitter Voltage

Contextual Info: E123M UX Device E1/E2/E3 MUX/DEMUX TXC-03361 Engines for Giooal Connectivity DATA SHEET DESCRIPTION FEATURES • E1 2048 kbit/s multiplexer/demultiplexer for ITU-T Recommendations: G.742 (8448 kbit/s E2 frame format) G.751 (34368 kbit/s E3 frame format)

Contextual Info: # L o w Co s t T rip le C R T D riv e r W U IU U IW CORPORATION \ J CVA3407T FEATURES DESCRIPTION • • • • • • The CVA3407T contains three high impedance wideband amplifiers, designed specifically to drive a CRT. It features no crossover distortion for excellent gray scale linearity. This device