FM16W08
Abstract: No abstract text available
Text: Preliminary FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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FM16W08
64Kbit
FM16W08,
00002G
FM16W08-SG
A103700002G
FM16W08
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Untitled
Abstract: No abstract text available
Text: Pre-Production FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention (@ +75C) NoDelay Writes Advanced High-Reliability Ferroelectric Process
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Original
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PDF
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FM16W08
64Kbit
FM16W08
64-kilobit
FM16W08,
00002G
FM16W08-SG
A103700002G
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FM1608B-SG
Abstract: AEC-Q100-002 MS-013 FM1608B
Text: Preliminary FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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Original
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PDF
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FM1608B
64Kbit
FM1608B
64-kilobit
MS-013
FM1608B,
00002G
FM1608B-SG
A103700002G
FM1608B-SG
AEC-Q100-002
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Untitled
Abstract: No abstract text available
Text: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ +75 C) NoDelay Writes Advanced High-Reliability Ferroelectric Process
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Original
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PDF
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FM1608B
64Kbit
28-pin
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Untitled
Abstract: No abstract text available
Text: Pre-Production FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention (@ +75C) NoDelay Writes Advanced High-Reliability Ferroelectric Process
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Original
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PDF
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FM16W08
64Kbit
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Untitled
Abstract: No abstract text available
Text: Preliminary FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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Original
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PDF
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FM1608B
64Kbit
28-pin
MS-013
FM1608B,
00002G
FM1608B-SG
A103700002G
|
Untitled
Abstract: No abstract text available
Text: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ +75C) NoDelay Writes Advanced High-Reliability Ferroelectric Process
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Original
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PDF
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FM1608B
64Kbit
28-pin
FM1608B,
00002G
FM1608B-SG
A103700002G
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Untitled
Abstract: No abstract text available
Text: Pre-Production FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process
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Original
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PDF
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FM18W08
256Kb
256Kbit
32Kx8
FM18W08,
00002G
FM18W08-SG
A103700002G
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Untitled
Abstract: No abstract text available
Text: Pre-Production FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process
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Original
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PDF
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FM18W08
256Kb
256Kbit
32Kx8
FM18W08,
00002G
FM18W08-SG
A103700002G
|
Untitled
Abstract: No abstract text available
Text: Preliminary FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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Original
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PDF
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FM18W08
256Kb
256Kbit
32Kx8
FM18W08,
00002G
FM18W08-SG
A103700002G
|
Untitled
Abstract: No abstract text available
Text: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ +75C) NoDelay Writes Advanced High-Reliability Ferroelectric Process
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Original
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PDF
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FM1608B
64Kbit
FM1608B
64-kilobit
FM1608B,
00002G
FM1608B-SG
A103700002G
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FM18W08
Abstract: FM18W08-SG FM18W08-S AEC-Q100-002 MS-013 fm18w08sg cmos disadvantages
Text: Preliminary FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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Original
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PDF
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FM18W08
256Kb
256Kbit
FM18W08
256-kilobit
28-pin
MS-013
FM18W08,
00002G
FM18W08-SG
FM18W08-S
AEC-Q100-002
fm18w08sg
cmos disadvantages
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FM16W08
Abstract: FM16W08-SG AEC-Q100-002 MS-013
Text: Preliminary FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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Original
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PDF
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FM16W08
64Kbit
FM16W08
64-kilobit
28-pin
MS-013
FM16W08,
00002G
FM16W08-SG
FM16W08-SG
AEC-Q100-002
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Untitled
Abstract: No abstract text available
Text: Pre-Production FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ 75°C) NoDelay Writes Advanced High-Reliability Ferroelectric Process
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Original
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PDF
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FM1808B
256Kb
256Kbit
32Kx8
28-pin
|
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Untitled
Abstract: No abstract text available
Text: Preliminary FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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Original
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PDF
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FM1808B
256Kb
256Kbit
32Kx8
28-piV
28-pin
MS-013
FM1808B,
00002G
FM1808B-SG
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fm16w08
Abstract: fm16w08-sg
Text: Pre-Production FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention (@ +75C) NoDelay Writes Advanced High-Reliability Ferroelectric Process
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Original
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PDF
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FM16W08
64Kbit
Temperature10
FM16W08,
00002G
FM16W08-SG
A103700002G
fm16w08
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FM1808B
Abstract: FM1808B-SG
Text: Pre-Production FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ +75C) NoDelay Writes Advanced High-Reliability Ferroelectric Process
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Original
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PDF
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FM1808B
256Kb
256Kbit
32Kx8
28-pin
FM1808B,
00002G
FM1808B-SG
A103700002G
FM1808B
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D452
Abstract: No abstract text available
Text: 123456789A !C"!#$C 123456278912 34526789ABCD6972672 D46E2 F9B57D26E2 A96F5F2 6729775D69726D4 26B52 A9FDE292657E52 5A5EE2 9A26B65F2 2
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PDF
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23456789A
234789A
34526789ABCD6972672
D46E2
B57D26E2
D6972
9A26B
29A29D45A
2D92C7
267D5
D452
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Untitled
Abstract: No abstract text available
Text: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ +75 C) NoDelay Writes Advanced High-Reliability Ferroelectric Process
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Original
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PDF
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FM1608B
64Kbit
28-pin
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Untitled
Abstract: No abstract text available
Text: A T & T ME L EC I C flS □05002b 00002Gfci 4 D T-66-21-51 WA-LS157, WP90348 List 7 Quad 2- to 1-Line Data Selector/Multiplexer The LS157 is a bipolar, NPN, sealed-junction, silicon integrated circuit. It is manufactured in low-power Schottky technology and is available in a wirebonded, 16-pin plastic DIP or surface mount package.
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OCR Scan
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PDF
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05002b
00002Gfci
T-66-21-51
WA-LS157,
WP90348
LS157
16-pin
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LS157
Abstract: WA-LS157 WP90348
Text: A T & T MELEC I C flS D □05002b 00002Gfci 4 T-66-21-51 WA-LS157, WP90348 List 7 Quad 2- to 1-Line Data Selector/Multiplexer The LS157 is a bipolar, N PN, sealed-junction, silicon integrated circuit. It is manufactured in low-power Schottky technology and is available in a wirebonded, 16-pin plastic D IP or surface m ount package.
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OCR Scan
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PDF
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WA-LS157,
WP90348
05002b
00002Gti
T-66-21-51
LS157
16-pin
005002b
T-66-21-51
WA-LS157
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HD44238
Abstract: DS2130 DS2130Q DSZ130Q HD44238C LM130
Text: DS2130Q DS2130Q DALLAS SEMICONDUCTOR Voice Messaging Processor PIN ASSIGNMENT FEATURES • Per-channel voice messaging processor for digitized voice storage and retrieval • High fidelity speech recording and playback at 8,12, 16, 24 and 32 Kbits/sec • Integral DTMFtransceiverfor remote touch-tone con
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OCR Scan
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PDF
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DS2130Q
28-pin
DS2130Q)
Ebl413D
DS2130Q
2bl413D
DDD621Ã
HD44238
DS2130
DSZ130Q
HD44238C
LM130
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OTI-087
Abstract: OTI-068 80386dx memory interfacing TL016 80386 chipset CHIPset for 80286 128x48 486 system bus 80386DX 80486
Text: OAK T E C HN O LO f i Y INC ¡¡¡¡E » • bTS^HOS 0000201 SSS »OAKT OAK TECHNOLOGY INC System Solutions in Silicon PRODUCT OVERVIEW O T I-0 8 7 LOCAL BUS VGA GRAPHICS CONTROLLER DESCRIPTION The OTI-OS7 is a highly integrated, single chip Local Bus Color Graphics Controller compatible with the IBM VGA standard.
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OCR Scan
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PDF
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0000api
OTI-087
OTI-087
24-bit
640x480
1024x768
1280x1024
I016n,
OTI-068
80386dx memory interfacing
TL016
80386 chipset
CHIPset for 80286
128x48
486 system bus
80386DX
80486
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Untitled
Abstract: No abstract text available
Text: DUAL FULL-BWDGE PWM MOTOR DRIVER The A2919EB and A2919ELB motor drivers are designed to drive both windings of a bipolar stepper motor or bidirectionally control two dc motors over a temperature range of -40°C to +85°C. Both bridges are capable of sustaining 45 V and include internal pulse-width modu
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OCR Scan
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PDF
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A2919EB
A2919ELB
A2919EB
24-Pin
A2919ELB
DSDM33Ã
24-Lead
0S0433Ã
00002Gb
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