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    00002G Price and Stock

    Same Sky TBL-0016-1000-02GR-2OR

    TERMINAL BLOCK, 1-6 POLES,GREEN
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    DigiKey TBL-0016-1000-02GR-2OR Box 387 1
    • 1 $3.81
    • 10 $2.551
    • 100 $2.1672
    • 1000 $1.90635
    • 10000 $1.82112
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    Mouser Electronics TBL-0016-1000-02GR-2OR 340
    • 1 $4.25
    • 10 $3.24
    • 100 $2.64
    • 1000 $1.95
    • 10000 $1.91
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    Microchip Technology Inc TPG100002-G3

    ICSP PRODUCTION PROGRAMMER
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    DigiKey TPG100002-G3 Bulk 2 1
    • 1 $929.99
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    Mouser Electronics TPG100002-G3
    • 1 $911.75
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    Newark TPG100002-G3 Bulk 1
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    Microchip Technology Inc TPG100002-G3 48 12 Weeks
    • 1 $774.99
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    NAC TPG100002-G3 1
    • 1 $1033.32
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    • 100 $968.74
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    Avnet Silica TPG100002-G3 54 Weeks 1
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    Stewart Connector SS80100-002G

    CONN MOD JACK 8P8C UNSHIELDED
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    L-com Inc PPA00002GN-15F

    HEAVY DUTY CPU/PDU POWER CORD -
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    DigiKey PPA00002GN-15F Bag 1
    • 1 $41.8
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    Newark PPA00002GN-15F Bulk 2 1
    • 1 $42.63
    • 10 $38.37
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    RS PPA00002GN-15F Bulk 3 Weeks 1
    • 1 $33.99
    • 10 $33.99
    • 100 $29.54
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    L-com Inc PPA00002GN-03F

    HEAVY DUTY CPU / PDU POWER CORD
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    DigiKey PPA00002GN-03F Bag 1
    • 1 $15.95
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    Newark PPA00002GN-03F Bulk 22 1
    • 1 $15.64
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    RS PPA00002GN-03F Bulk 3 Weeks 1
    • 1 $11.39
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    00002G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FM16W08

    Abstract: No abstract text available
    Text: Preliminary FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM16W08 64Kbit FM16W08, 00002G FM16W08-SG A103700002G FM16W08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM16W08 64Kbit FM16W08 64-kilobit FM16W08, 00002G FM16W08-SG A103700002G PDF

    FM1608B-SG

    Abstract: AEC-Q100-002 MS-013 FM1608B
    Text: Preliminary FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM1608B 64Kbit FM1608B 64-kilobit MS-013 FM1608B, 00002G FM1608B-SG A103700002G FM1608B-SG AEC-Q100-002 PDF

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ +75 C) NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original     		FM1608B 64Kbit 28-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention (@ +75C) NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original     		FM16W08 64Kbit PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM1608B 64Kbit 28-pin MS-013 FM1608B, 00002G FM1608B-SG A103700002G PDF

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM1608B 64Kbit 28-pin FM1608B, 00002G FM1608B-SG A103700002G PDF

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM18W08 256Kb 256Kbit 32Kx8 FM18W08, 00002G FM18W08-SG A103700002G PDF

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM18W08 256Kb 256Kbit 32Kx8 FM18W08, 00002G FM18W08-SG A103700002G PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM18W08 256Kb 256Kbit 32Kx8 FM18W08, 00002G FM18W08-SG A103700002G PDF

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM1608B 64Kbit FM1608B 64-kilobit FM1608B, 00002G FM1608B-SG A103700002G PDF

    FM18W08

    Abstract: FM18W08-SG FM18W08-S AEC-Q100-002 MS-013 fm18w08sg cmos disadvantages
    Text: Preliminary FM18W08 256Kb Wide Voltage Bytewide F-RAM Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM18W08 256Kb 256Kbit FM18W08 256-kilobit 28-pin MS-013 FM18W08, 00002G FM18W08-SG FM18W08-S AEC-Q100-002 fm18w08sg cmos disadvantages PDF

    FM16W08

    Abstract: FM16W08-SG AEC-Q100-002 MS-013
    Text: Preliminary FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM16W08 64Kbit FM16W08 64-kilobit 28-pin MS-013 FM16W08, 00002G FM16W08-SG FM16W08-SG AEC-Q100-002 PDF

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ 75°C) NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original     		FM1808B 256Kb 256Kbit 32Kx8 28-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM1808B 256Kb 256Kbit 32Kx8 28-piV 28-pin MS-013 FM1808B, 00002G FM1808B-SG PDF

    fm16w08

    Abstract: fm16w08-sg
    Text: Pre-Production FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM16W08 64Kbit Temperature10 FM16W08, 00002G FM16W08-SG A103700002G fm16w08 PDF

    FM1808B

    Abstract: FM1808B-SG
    Text: Pre-Production FM1808B 256Kb Bytewide 5V F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM1808B 256Kb 256Kbit 32Kx8 28-pin FM1808B, 00002G FM1808B-SG A103700002G FM1808B PDF

    D452

    Abstract: No abstract text available
    Text: 123456789A  !C"!#$C 123456278912 34526789ABCD6972672 D46E2 F9B57D26E2 A96F5F2 6729775D69726D4 26B52 A9FDE292657E52 5A5EE2 9A26B65F2 2


    Original     		23456789A 234789A 34526789ABCD6972672 D46E2 B57D26E2 D6972 9A26B 29A29D45A 2D92C7 267D5 D452 PDF

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ +75 C) NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original     		FM1608B 64Kbit 28-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: A T & T ME L EC I C flS □05002b 00002Gfci 4 D T-66-21-51 WA-LS157, WP90348 List 7 Quad 2- to 1-Line Data Selector/Multiplexer The LS157 is a bipolar, NPN, sealed-junction, silicon integrated circuit. It is manufactured in low-power Schottky technology and is available in a wirebonded, 16-pin plastic DIP or surface mount package.


    OCR Scan     		05002b 00002Gfci T-66-21-51 WA-LS157, WP90348 LS157 16-pin PDF

    LS157

    Abstract: WA-LS157 WP90348
    Text: A T & T MELEC I C flS D □05002b 00002Gfci 4 T-66-21-51 WA-LS157, WP90348 List 7 Quad 2- to 1-Line Data Selector/Multiplexer The LS157 is a bipolar, N PN, sealed-junction, silicon integrated circuit. It is manufactured in low-power Schottky technology and is available in a wirebonded, 16-pin plastic D IP or surface m ount package.


    OCR Scan     		WA-LS157, WP90348 05002b 00002Gti T-66-21-51 LS157 16-pin 005002b T-66-21-51 WA-LS157 PDF

    HD44238

    Abstract: DS2130 DS2130Q DSZ130Q HD44238C LM130
    Text: DS2130Q DS2130Q DALLAS SEMICONDUCTOR Voice Messaging Processor PIN ASSIGNMENT FEATURES • Per-channel voice messaging processor for digitized voice storage and retrieval • High fidelity speech recording and playback at 8,12, 16, 24 and 32 Kbits/sec • Integral DTMFtransceiverfor remote touch-tone con­


    OCR Scan     		DS2130Q 28-pin DS2130Q) Ebl413D DS2130Q 2bl413D DDD621Ã HD44238 DS2130 DSZ130Q HD44238C LM130 PDF

    OTI-087

    Abstract: OTI-068 80386dx memory interfacing TL016 80386 chipset CHIPset for 80286 128x48 486 system bus 80386DX 80486
    Text: OAK T E C HN O LO f i Y INC ¡¡¡¡E » • bTS^HOS 0000201 SSS »OAKT OAK TECHNOLOGY INC System Solutions in Silicon PRODUCT OVERVIEW O T I-0 8 7 LOCAL BUS VGA GRAPHICS CONTROLLER DESCRIPTION The OTI-OS7 is a highly integrated, single chip Local Bus Color Graphics Controller compatible with the IBM VGA standard.


    OCR Scan     		0000api OTI-087 OTI-087 24-bit 640x480 1024x768 1280x1024 I016n, OTI-068 80386dx memory interfacing TL016 80386 chipset CHIPset for 80286 128x48 486 system bus 80386DX 80486 PDF

    Untitled

    Abstract: No abstract text available
    Text: DUAL FULL-BWDGE PWM MOTOR DRIVER The A2919EB and A2919ELB motor drivers are designed to drive both windings of a bipolar stepper motor or bidirectionally control two dc motors over a temperature range of -40°C to +85°C. Both bridges are capable of sustaining 45 V and include internal pulse-width modu­


    OCR Scan     		A2919EB A2919ELB A2919EB 24-Pin A2919ELB DSDM33Ã 24-Lead 0S0433Ã 00002Gb PDF