M29W008A
Abstract: M29W008AB M29W008AT
Text: M29W008AT M29W008AB 8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 80ns ■ PROGRAMMING TIME: 10µs typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte
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M29W008AT
M29W008AB
TSOP40
M29W008A
M29W008AB
M29W008AT
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PDF
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M29W400B
Abstract: FBGA48 M29W400 M29W400BB M29W400BT M29W400T
Text: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W400T and M29W400B are replaced respectively by the M29W400BT and M29W400BB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
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M29W400T
M29W400B
512Kb
256Kb
M29W400T
M29W400B
M29W400BT
M29W400BB
FBGA48
M29W400
M29W400BB
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PDF
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BIOS Flash ROM Chip
Abstract: M50FW040 PLCC32 TSOP32
Text: M50FW040 4-Mbit 512 Kb x8, uniform block 3-V supply firmware hub Flash memory Feature summary • Supply voltage – VCC = 3 V to 3.6 V for Program, Erase and Read operations – VPP = 12V for fast Erase (optional) ■ Two interfaces – Firmware hub (FWH) interface for
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M50FW040
33-MHz
BIOS Flash ROM Chip
M50FW040
PLCC32
TSOP32
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PDF
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JESD97
Abstract: M29F400 M29F400B M29F400BB M29F400BT
Text: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Feature summary • Single 5 V ± 10% supply voltage for program, erase and read operations ■ Access time: 45 ns ■ Programming time – 8 µs per Byte/Word typical
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M29F400BT
M29F400BB
512Kb
256Kb
JESD97
M29F400
M29F400B
M29F400BB
M29F400BT
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PDF
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M29F800D
Abstract: M29F800DB M29F800DT
Text: M29F800DT M29F800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 5V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for Program, Erase and Read ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
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M29F800DT
M29F800DB
512Kb
TSOP48
M29F800D
M29F800DB
M29F800DT
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PDF
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IR 1261
Abstract: prd2 APE1016 APE10616 APE1516 APE2016 APE3116 APE4116 APE6316 APE8416
Text: A PLUS MAKE YOUR PRODUCTION A-PLUS APExx16 Series DATA SHEET APLUS INTEGRATED CIRCUITS INC. Address: 3 F-10, No. 32, Sec. 1, Chenggung Rd., Taipei, Taiwan 115, R.O.C. 115 台北市南港區成功路㆒段 32 號 3 樓之 10. Sales E-mail: sales@aplusinc.com.tw
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APExx16
IR 1261
prd2
APE1016
APE10616
APE1516
APE2016
APE3116
APE4116
APE6316
APE8416
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PDF
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29F800T
Abstract: 7D000H-7DFFFH SA13 MX29F800T SA10 SA11 SA12
Text: PRELIMINARY MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption
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MX29F800T/B
1Mx8/512Kx16]
70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/08/2000
DEC/04/2000
FEB/12/2001
29F800T
7D000H-7DFFFH
SA13
MX29F800T
SA10
SA11
SA12
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PDF
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Untitled
Abstract: No abstract text available
Text: EFST F49L004UA / F49L004BA 4 Mbit 512K x 8 3V Only CMOS Flash Memory 1. FEATURES Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns z Compatible with JEDEC standard - Pinout, packages and software commands compatible with single-power supply Flash
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F49L004UA
F49L004BA
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PDF
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555H
Abstract: MX29F200B MX29F200T
Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz
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MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/15/2001
NOV/12/2001
555H
MX29F200B
MX29F200T
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PDF
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324T
Abstract: 2MWx16bit
Text: ADVANCED INFORMATION MX69LW322/324T/B 32M-BIT [X8/X16] FLASH AND 2M-BIT/4M-BIT X8/X16 SRAM MIXED MULTI CHIP PACKAGE MEMORY FEATURES • Supply voltage range: 2.7V to 3.6V • Fast access time: Flash memory:70/90ns SRAM memory:70/85ns • Operation temperature range: -40 ~ 85°C
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MX69LW322/324T/B
32M-BIT
X8/X16]
X8/X16)
70/90ns
70/85ns
AuP44
APR/17/2002
APR/18/2002
MAY/31/2002
324T
2MWx16bit
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PDF
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MX29LV400
Abstract: mx29LV160cbtc-70g MX29LV800C MX29LV160C MX29LV160CBTI-70G mx29lv160d MX29LV800CBTC-90G MX29LV800CTTC-70 MX29LV160CTTC-70G
Text: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B MX29LV400C T/B, MX29LV800C T/B, MX29LV160C T/B DATASHEET The MX29LV160C T/B product family has been discontinued. The MX29LV160C T/B product family is not recommended for new designs. The MX29LV160D T/B family is the
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MX29LV400C
MX29LV800C
MX29LV160C
MX29LV160D
MX29LV400
mx29LV160cbtc-70g
MX29LV160CBTI-70G
MX29LV800CBTC-90G
MX29LV800CTTC-70
MX29LV160CTTC-70G
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PDF
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C000H-DFFFH
Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
Text: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation
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MX29LW128T/B/U/D
128M-BIT
JAN/27/2003
MAR/28/2003
MAY/16/2003
MAY/29/2003
C000H-DFFFH
24Blocks
FB0000h-FBFFFFh
9F0000h-9FFFFFh
C10000h-C1FFFFh
FF4000h-FF5FFFh
8a0000h8affffh
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PDF
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Untitled
Abstract: No abstract text available
Text: M29F200BT M29F200BB 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte/Word typical ■ 44 7 MEMORY BLOCKS
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M29F200BT
M29F200BB
256Kb
128Kb
TSOP48
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PDF
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Untitled
Abstract: No abstract text available
Text: M29W400BT M29W400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical
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M29W400BT
M29W400BB
512Kb
256Kb
TSOP48
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PDF
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CAPACITOR ELITE
Abstract: No abstract text available
Text: EFST F49L400UA/F49L400BA 4 Mbit 512K x 8/256K x 16 3V Only CMOS Flash Memory preliminary 1. FEATURES ! ! Single supply voltage 3.0V-3.6V Fast access time: 70/90 ns ! 524,288 x 8 / 262,144 x 16 switchable by BYTE pin Compatible with JEDEC standard - Pin-out, packages and software commands
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F49L400UA/F49L400BA
8/256K
CAPACITOR ELITE
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PDF
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29LV800
Abstract: TSOP 48 Pattern
Text: PRELIMINARY MX29LV800T/B & MX29LV800AT/AB FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Extended single - supply voltage range 2.7V to 3.6V • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV800T/B
MX29LV800AT/AB
1Mx8/512K
70/90ns
9us/11us
16K-Bytex1,
32K-Bytex1,
64K-Byte
MAR/01/2002
APR/18/2002
29LV800
TSOP 48 Pattern
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PDF
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audio synthesizer
Abstract: 56KHZ APE6312 APE0612 APE1012 APE1512 APE2012 APE3112 APE4112 APE5212
Text: A PLUS MAKE YOUR PRODUCTION A-PLUS APExx12 Series DATA SHEET APLUS INTEGRATED CIRCUITS INC. Address: 3 F-10, No. 32, Sec. 1, Chenggung Rd., Taipei, Taiwan 115, R.O.C. 115 台北市南港區成功路㆒段 32 號 3 樓之 10. Sales E-mail: sales@aplusinc.com.tw
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APExx12
APE0612
APE1012
APE1512
APE2012
APE3112
APE4112
APE5212
audio synthesizer
56KHZ
APE6312
APE0612
APE1012
APE1512
APE2012
APE3112
APE4112
APE5212
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PDF
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FB300
Abstract: M50FW080 PLCC32 TSOP32
Text: M50FW080 8 Mbit 1M x8, Uniform Block 3V Supply Firmware Hub Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 3V to 3.6V for Program, Erase and Read Operations – VPP = 12V for Fast Program and Fast Erase (optional)
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M50FW080
FB300
M50FW080
PLCC32
TSOP32
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PDF
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Untitled
Abstract: No abstract text available
Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz
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MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
DEC/20/1999
PM0549
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PDF
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BA RV
Abstract: code lock circuit A1D14 RV80
Text: MITSUBISHI LSIs MITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12 8,388,608-BIT 1048,576-WORD 8-BIT / 524,288-WORD BY16-BIT 8,388,608-BIT (1048,576-WORD BYBY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
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M5M29FB/T800FP
RV-80
608-BIT
576-WORD
288-WORD
BY16-BIT)
BA RV
code lock circuit
A1D14
RV80
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PDF
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29F200T
Abstract: No abstract text available
Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz
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MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/15/2001
NOV/12/2001
29F200T
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PDF
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Q002
Abstract: M29W800FT TFBGA48 TSOP48 outline m29w800f
Text: M29W800FT M29W800FB 8 Mbit 1 Mb x8 or 512 Kb ×16, Boot Block 3 V supply Flash memory Preliminary Data Features • Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read ■ Access time: 70 ns ■ Programming time – 10 µs per Byte/Word typical
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M29W800FT
M29W800FB
64-bit
Q002
M29W800FT
TFBGA48
TSOP48 outline
m29w800f
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PDF
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Untitled
Abstract: No abstract text available
Text: ££ Cost E ffective Solution fo r the 2 MB F lash C A T 2 8 F0 1 5 < = ^ T ^ L _ Y S - r L icen sed In tel second source 1.5 Megabit CMOS Flash Memory FEATURES • Fully Compatible to 2 MB Flash 28F020 - No hardware or software changes Stop Tim er for Program/Erase
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OCR Scan
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28F020)
32-pin
24-40-LEAD
M0-015
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PDF
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Untitled
Abstract: No abstract text available
Text: w t GEC P LESS EY S I M I C O N I I I O K S P1480 LAN CAM 1KX64-BIT CMOS CONTENT-ADDRESSABLE MEMORY (SUPERSEDES SEPTEMBER 1993 EDITIO N The P1480 LAN CAM is a 1K X 64-bit fixed-width CMOS Content-addressable Memory (CAM) aimed at address filtering applications in Local-area Network (LAN) bridges
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OCR Scan
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P1480
1KX64-BIT
P1480
64-bit
37bflS22
37b6S22
28-LEAD
52-LEAD
37bfiS22
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PDF
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