SAMSUNG MCP
Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)
|
Original
|
KBB0xB400M
16Mx16)
4Mx16)
80-Ball
80x12
SAMSUNG MCP
ECH information
KBB0xB400M
BA102
ba4901
UtRAM Density
BA5101
samsung NAND memory
BGA180
ba30 transistor
|
PDF
|
GL032A
Abstract: S71GL032A S71GL032
Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
|
Original
|
S71GL032A
16-bit)
1M/512K/256K
GL032A
S71GL032
|
PDF
|
Untitled
Abstract: No abstract text available
Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised
|
Original
|
K8D6x16UTM
K8D6x16UBM
48TSOP1
16M/16M
08MAX
|
PDF
|
740-0007
Abstract: EN29GL064 6A000
Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and
|
Original
|
EN29GL064
8192K
4096K
16-bit)
740-0007
EN29GL064
6A000
|
PDF
|
SA-275
Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
Text: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document
|
Original
|
Am29PDL129H
S29PL129J
Am29PDL129J
SA-275
2aa 555
SA1127
SA1-108
SA1115
SA298
SA283
SA1117
PDL128G
|
PDF
|
MX29LV640D
Abstract: A0-A21 MX29LV640E Q0-Q15 MX29LV640DT 0001111XXX MX29LV640DBTC-90G 1000010XXX
Text: MX29LV640D T/B MX29LV640D T/B DATASHEET The MX29LV640D T/B product family is not recommended for new designs. The MX29LV640E T/B family is the recommended replacement. Please refer to MX29LV640E T/B datasheet for full specifications and ordering information, or contact your local sales
|
Original
|
MX29LV640D
MX29LV640E
MX29LV640E
PM1208
64M-BIT
A0-A21
Q0-Q15
MX29LV640DT
0001111XXX
MX29LV640DBTC-90G
1000010XXX
|
PDF
|
MX29LV640ebt
Abstract: MX29LV640EB MX29LV640EBTI-70G 29LV640 MX29LV640E mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132
Text: MX29LV640E T/B 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable
|
Original
|
MX29LV640E
64M-BIT
128-word
MX29LV640ebt
MX29LV640EB
MX29LV640EBTI-70G
29LV640
mx29lv640etti
MX29LV640ETTI-70G
A0-A21
Q0-Q15
PM-132
|
PDF
|
AM29DL640H
Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640
Text: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
|
Original
|
Am75PDL191BHHa/
Am75PDL193BHHa
Am75PDL191BHHa/Am75PDL193BHHa
AM29DL640H
FTE073
PDL127
PDL127H
PDL129
PDL129H
cef3
sa2111
AM29DL640
|
PDF
|
TSOP-20 FOOTPRINT
Abstract: tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL S29PL-J
Text: S29PL-J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion
|
Original
|
S29PL-J
16-Bit)
S29PL-J
TSOP-20 FOOTPRINT
tray datasheet bga 8x9
JESD 95-1, SPP-010
PL032J
AM29PDL
|
PDF
|
SA158
Abstract: SA214 8adrr
Text: 63/+63/+ for Multi-Chip Products MCP 0HJDELW 0 [ %LW &026 9ROWRQO\ 6LPXOWDQHRXV 5HDG:ULWH 3DJH 0RGH )ODVK 0HPRU\ Datasheet PRELIMINARY Distinctive Characteristics ² $Ã6Ã
t
hr
hrÃp
r ² Ã6ÃvphyÃhqiÃqrÃp
r
|
Original
|
S29PL127H
SA158
SA214
8adrr
|
PDF
|
10001XXXXX
Abstract: No abstract text available
Text: S29PL-J 128/128/64/32 Megabit 8/8/4/2M x 16-Bit CMOS 3.0 Volt-Only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
|
Original
|
S29PL-J
16-Bit)
S29PL-J
10001XXXXX
|
PDF
|
EN29GL064
Abstract: cFeon cFeon EN
Text: EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and
|
Original
|
EN29GL064
8192K
4096K
16-bit)
8-word/16ombinations
EN29GL064
48-pin
48-ball
cFeon
cFeon EN
|
PDF
|
PM1076
Abstract: A0-A21 MX29LV640B Q0-Q15 MX29LV640BTTC-90G
Text: MX29LV640B T/B FEATURES 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable
|
Original
|
MX29LV640B
64M-BIT
128-word
PM1076
A0-A21
Q0-Q15
MX29LV640BTTC-90G
|
PDF
|
asme SA388
Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M,S29GL128M,S29GL064M,S29GL032M 256M ビット,128M ビット,64M ビット,および 32M ビット, 3.0V 単一電源,ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ
|
Original
|
S29GL-M
S29GL256MS29GL128MS29GL064MS29GL032M
S29GL128MS29GL128N
S29GL256MS29GL256N
S29GLxxxN
00-B-5
S29GL032M
LAA064
asme SA388
gl128m
A2113
S29GL256
E78000
S29GL128N
TSOP56 S29GL128N
sa32sa35
S29GLxxxM
BGA-63
|
PDF
|
|
PM1076
Abstract: MX29LV640BTTC-90G MX29LV640B 29LV640 A0-A21 Q0-Q15
Text: MX29LV640B T/B FEATURES 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable
|
Original
|
MX29LV640B
64M-BIT
128-word
PM1076
MX29LV640BTTC-90G
29LV640
A0-A21
Q0-Q15
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MX29LV640B T/B 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable
|
Original
|
MX29LV640B
64M-BIT
128-word
Latch-/17/2006
|
PDF
|
S29GL-N
Abstract: No abstract text available
Text: S29GL-N MirrorBit Flash Family S29GL064N, S29GL032N 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology S29GL-N MirrorBit® Flash Family Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
|
Original
|
S29GL-N
S29GL064N,
S29GL032N
|
PDF
|
PSEUDO SRAM
Abstract: No abstract text available
Text: Am49LV6408M Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
|
Original
|
Am49LV6408M
w052903-163814C
PSEUDO SRAM
|
PDF
|
30536
Abstract: sa2111
Text: Am70PDL127BDH/Am70PDL129BDH Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
|
Original
|
Am70PDL127BDH/Am70PDL129BDH
Am70PDL127BDH
Am70PDL129BDH
30536
sa2111
|
PDF
|
sa2111
Abstract: M7500
Text: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
|
Original
|
Am75PDL191BHHa/
Am75PDL193BHHa
Am75PDL191BHHa/Am75PDL193BHHa
sa2111
M7500
|
PDF
|
s29GL064N90
Abstract: S29GL064N s29gl032n90 S29GL-N
Text: S29GL-N MirrorBit Flash Family S29GL064N, S29GL032N 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology S29GL-N MirrorBit® Flash Family Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
|
Original
|
S29GL-N
S29GL064N,
S29GL032N
s29GL064N90
S29GL064N
s29gl032n90
|
PDF
|
TSOP-20 FOOTPRINT
Abstract: SA1115 pl032j
Text: S29PL-J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0-Volt only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIOTM Control ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described
|
Original
|
S29PL-J
16-Bit)
S29PL-J
TSOP-20 FOOTPRINT
SA1115
pl032j
|
PDF
|
W29GL064C
Abstract: No abstract text available
Text: W29GL064C 64M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE Publication Release Date: October 18, 2011 Preliminary - Revision E BLANK W29GL064C Table of Contents 1 2 3 4 5 6 7 GENERAL DESCRIPTION . 1
|
Original
|
W29GL064C
64M-BIT
W29GL064C
|
PDF
|
29LV640
Abstract: No abstract text available
Text: MX29LV640MU 64M-BIT 4M x 16-Bit SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • 4,194,304 x 16 byte structure • Sector structure
|
Original
|
MX29LV640MU
64M-BIT
16-Bit)
128-word
PM1098
29LV640
|
PDF
|