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    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


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    KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor PDF

    GL032A

    Abstract: S71GL032A S71GL032
    Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this


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    S71GL032A 16-bit) 1M/512K/256K GL032A S71GL032 PDF

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


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    K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX PDF

    740-0007

    Abstract: EN29GL064 6A000
    Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and


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    EN29GL064 8192K 4096K 16-bit) 740-0007 EN29GL064 6A000 PDF

    SA-275

    Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
    Text: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document


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    Am29PDL129H S29PL129J Am29PDL129J SA-275 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G PDF

    MX29LV640D

    Abstract: A0-A21 MX29LV640E Q0-Q15 MX29LV640DT 0001111XXX MX29LV640DBTC-90G 1000010XXX
    Text: MX29LV640D T/B MX29LV640D T/B DATASHEET The MX29LV640D T/B product family is not recommended for new designs. The MX29LV640E T/B family is the recommended replacement. Please refer to MX29LV640E T/B datasheet for full specifications and ordering information, or contact your local sales


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    MX29LV640D MX29LV640E MX29LV640E PM1208 64M-BIT A0-A21 Q0-Q15 MX29LV640DT 0001111XXX MX29LV640DBTC-90G 1000010XXX PDF

    MX29LV640ebt

    Abstract: MX29LV640EB MX29LV640EBTI-70G 29LV640 MX29LV640E mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132
    Text: MX29LV640E T/B 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable


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    MX29LV640E 64M-BIT 128-word MX29LV640ebt MX29LV640EB MX29LV640EBTI-70G 29LV640 mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132 PDF

    AM29DL640H

    Abstract: FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640
    Text: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    Am75PDL191BHHa/ Am75PDL193BHHa Am75PDL191BHHa/Am75PDL193BHHa AM29DL640H FTE073 PDL127 PDL127H PDL129 PDL129H cef3 sa2111 AM29DL640 PDF

    TSOP-20 FOOTPRINT

    Abstract: tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL S29PL-J
    Text: S29PL-J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion


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    S29PL-J 16-Bit) S29PL-J TSOP-20 FOOTPRINT tray datasheet bga 8x9 JESD 95-1, SPP-010 PL032J AM29PDL PDF

    SA158

    Abstract: SA214 8adrr
    Text: 63/+63/+ for Multi-Chip Products MCP  0HJDELW  0 [ %LW &026  9ROWRQO\ 6LPXOWDQHRXV 5HDG:ULWH 3DJH 0RGH )ODVK 0HPRU\ Datasheet PRELIMINARY Distinctive Characteristics ² $À6łt…h€r…h†rÃpˆ……r‡ ² ×6ǒƒvphyƇhqi’À‚qrÃpˆ……r‡


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    S29PL127H SA158 SA214 8adrr PDF

    10001XXXXX

    Abstract: No abstract text available
    Text: S29PL-J 128/128/64/32 Megabit 8/8/4/2M x 16-Bit CMOS 3.0 Volt-Only, Simultaneous-Read/Write Flash Memory with Enhanced VersatileIO Control S29PL-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


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    S29PL-J 16-Bit) S29PL-J 10001XXXXX PDF

    EN29GL064

    Abstract: cFeon cFeon EN
    Text: EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and


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    EN29GL064 8192K 4096K 16-bit) 8-word/16ombinations EN29GL064 48-pin 48-ball cFeon cFeon EN PDF

    PM1076

    Abstract: A0-A21 MX29LV640B Q0-Q15 MX29LV640BTTC-90G
    Text: MX29LV640B T/B FEATURES 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable


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    MX29LV640B 64M-BIT 128-word PM1076 A0-A21 Q0-Q15 MX29LV640BTTC-90G PDF

    asme SA388

    Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
    Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256MS29GL128MS29GL064MS29GL032M 256M ビット,128M ビット,64M ビット,および 32M ビット, 3.0V 単一電源,ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ


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    S29GL-M S29GL256MS29GL128MS29GL064MS29GL032M S29GL128MS29GL128N S29GL256MS29GL256N S29GLxxxN 00-B-5 S29GL032M LAA064 asme SA388 gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63 PDF

    PM1076

    Abstract: MX29LV640BTTC-90G MX29LV640B 29LV640 A0-A21 Q0-Q15
    Text: MX29LV640B T/B FEATURES 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable


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    MX29LV640B 64M-BIT 128-word PM1076 MX29LV640BTTC-90G 29LV640 A0-A21 Q0-Q15 PDF

    Untitled

    Abstract: No abstract text available
    Text: MX29LV640B T/B 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable


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    MX29LV640B 64M-BIT 128-word Latch-/17/2006 PDF

    S29GL-N

    Abstract: No abstract text available
    Text: S29GL-N MirrorBit Flash Family S29GL064N, S29GL032N 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology S29GL-N MirrorBit® Flash Family Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


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    S29GL-N S29GL064N, S29GL032N PDF

    PSEUDO SRAM

    Abstract: No abstract text available
    Text: Am49LV6408M Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG


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    Am49LV6408M w052903-163814C PSEUDO SRAM PDF

    30536

    Abstract: sa2111
    Text: Am70PDL127BDH/Am70PDL129BDH Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG


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    Am70PDL127BDH/Am70PDL129BDH Am70PDL127BDH Am70PDL129BDH 30536 sa2111 PDF

    sa2111

    Abstract: M7500
    Text: Am75PDL191BHHa/ Am75PDL193BHHa Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    Am75PDL191BHHa/ Am75PDL193BHHa Am75PDL191BHHa/Am75PDL193BHHa sa2111 M7500 PDF

    s29GL064N90

    Abstract: S29GL064N s29gl032n90 S29GL-N
    Text: S29GL-N MirrorBit Flash Family S29GL064N, S29GL032N 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology S29GL-N MirrorBit® Flash Family Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


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    S29GL-N S29GL064N, S29GL032N s29GL064N90 S29GL064N s29gl032n90 PDF

    TSOP-20 FOOTPRINT

    Abstract: SA1115 pl032j
    Text: S29PL-J 128/128/64/32 Megabit 8/8/4/2 M x 16-Bit CMOS 3.0-Volt only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIOTM Control ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described


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    S29PL-J 16-Bit) S29PL-J TSOP-20 FOOTPRINT SA1115 pl032j PDF

    W29GL064C

    Abstract: No abstract text available
    Text: W29GL064C 64M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE Publication Release Date: October 18, 2011 Preliminary - Revision E BLANK W29GL064C Table of Contents 1 2 3 4 5 6 7 GENERAL DESCRIPTION . 1


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    W29GL064C 64M-BIT W29GL064C PDF

    29LV640

    Abstract: No abstract text available
    Text: MX29LV640MU 64M-BIT 4M x 16-Bit SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • 4,194,304 x 16 byte structure • Sector structure


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    MX29LV640MU 64M-BIT 16-Bit) 128-word PM1098 29LV640 PDF