CTM-6062NL
Abstract: No abstract text available
Text: 1 2 3 4 5 6 7 SPECIFICATIONS Insertion Loss: A Return Loss: 9 0.3-1MHz: -1.1 1-65MHz:-0.8 65-100MHz:-1.0 100-125MHz: -1.2 0.5-40MHz: -18 40-100MHz: -[12-20LOG f/80MHz ] 0.3-100MHz: -[22-20LOG (f/100MHz)] 0.3-100MHz: -30dB Min 0.3-100MHz: -35dB Min PRI: SEC=1CT:1CT ±2%
|
Original
|
PDF
|
CTM-6062NL
100KHz/0
350uH
720mA
57VDC
200mS
1500Vrms/0
1-65MHz
65-100MHz
|
Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 6 7 SPECIFICATIONS Turn Ratio: OCL: Insertion Loss: Return Loss: A B Crosstalk: CMR: Isolation: Housing: Contacts: Leads: Shield: Durability: C 8 9 1:1 ±3% 350uH min 1-100MHz= -1.1dB max 0.5-30MHz=-18db min 40MHz=-15.5dB min 50MHz=-13.6dB min 60-80MHz=-12dB min
|
Original
|
PDF
|
350uH
1-100MHz=
5-30MHz
-18db
40MHz
50MHz
60-80MHz
-12dB
-38dB
01-30MHz
|
Untitled
Abstract: No abstract text available
Text: R1005300L 5MHZ TO 100MHZ 30DB REVERSE HYBRID LOW CURRENT Package: SOT-115J Features • Excellent Linearity Superior Return Loss Performance Extremely Low Distortion Optimal Reliability Low Noise Unconditionally Stable Under All Terminations
|
Original
|
PDF
|
R1005300L
100MHZ
OT-115J
100MHz
140mA
24VDC
R1005300L
|
Untitled
Abstract: No abstract text available
Text: R1005300L R1005300L 30dB Reverse Hybrid 5MHz to 100MHz Low Current Package: SOT-115J The R1005300L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance. The part also provides
|
Original
|
PDF
|
R1005300L
100MHz
OT-115J
R1005300L
100MHz
140mA
24VDC
|
Untitled
Abstract: No abstract text available
Text: DBM-188 DBM-188 Very High Level +30dBm Intercept Point Double Balanced Mixer 0.5MHz to 450MHz Package: Flatpack DBM-188 is a miniature double balanced mixer that offers superior signal handling capability, typically better than +30dBm intercept point with only +20dBm LO power. Midband isolations are typically better than
|
Original
|
PDF
|
DBM-188
30dBm
450MHz
DBM-188
20dBm
800MHz
|
RFSW8000
Abstract: RFSW8000TR7 block diagram diagram of wifi wireless router RFSW8000-412
Text: RFSW8000 RFSW8000 2.5V TO 5.0V, 5MHz TO 6500MHz 2.5V TO 5.0V, 5MHz TO 6500MHz 10W SPDT SWITCH Package: QFN, 2mm x 2mm x 0.55mm RF1 1 8 VRF1 GND 2 7 RFC GND 3 6 GND RF2 4 5 VRF2 Features Single Voltage: 2.5V to 5.0V 40dBm P1dB 30dB Isolation at 2GHz
|
Original
|
PDF
|
RFSW8000
6500MHz
RFSW8000
6500MHz
40dBm
11a/n
4500MHz
RFSW8000TR7
block diagram diagram of wifi wireless router
RFSW8000-412
|
Untitled
Abstract: No abstract text available
Text: RFSW8000 RFSW8000 2.5V TO 5.0V, 5MHz TO 6500MHz 2.5V TO 5.0V, 5MHz TO 6500MHz 10W SPDT SWITCH Package: QFN, 2mm x 2mm x 0.55mm RF1 1 8 VRF1 GND 2 7 RFC GND 3 6 GND RF2 4 5 VRF2 Features Single Voltage: 2.5V to 5.0V 40dBm P1dB 30dB Isolation at 2GHz
|
Original
|
PDF
|
RFSW8000
6500MHz
40dBm
11a/n
RFSW8000
4500MHz
|
Untitled
Abstract: No abstract text available
Text: RFSW8000 RFSW8000 2.5V TO 5.0V, 5MHz TO 6500MHz 2.5V TO 5.0V, 5MHz TO 6500MHz 10W SPDT SWITCH Package: QFN, 2mm x 2mm x 0.55mm RF1 1 8 VRF1 GND 2 7 RFC GND 3 6 GND RF2 4 5 VRF2 Features Single Voltage: 2.5V to 5.0V 40dBm P1dB 30dB Isolation at 2GHz
|
Original
|
PDF
|
RFSW8000
6500MHz
40dBm
11a/n
RFSW8000
4500MHz
|
high Power Amplifier 100mhz
Abstract: CRBAMP-100-6000 Amplifier 1.7 2Ghz
Text: RedBox Model: CRBAMP-100-6000 AMPLIFIER 100MHz to 6.0GHz Crystek continues to enhance its product portfolio with the release of the RedBox Amplifier. Crystek’s model CRBAMP-100-6000 is a low-noise general purpose connectorized amplifier covering a frequency range of
|
Original
|
PDF
|
CRBAMP-100-6000
100MHz
CRBAMP-100-6000
17dBm
30dBm.
100MHz
high Power Amplifier 100mhz
Amplifier 1.7 2Ghz
|
lm311 OP-AMP
Abstract: lm833 equivalent OF TL084 OPAMP lm336 sot23 mc1458 quad SO23-5 TL082 opamp buffer op-amp tl084 SO23-5 package TS555
Text: Standard linear portfolio From innovative devices to application specific products Selection guide As part of ST’s ongoing commitment to minimize the environmental impact of its activities, ST has begun to produce Pb-free packages under the ECOPACK name. This table summarizes ST’s
|
Original
|
PDF
|
S014/16
OT23-3/5
OT323-5L
TQFP44/48
TSSOP14/16
TSSOP28
TS831-3/4/5
TS834-5
TS836-4
lm311 OP-AMP
lm833 equivalent
OF TL084 OPAMP
lm336 sot23
mc1458 quad
SO23-5
TL082 opamp
buffer op-amp tl084
SO23-5 package
TS555
|
OF TL084 OPAMP
Abstract: audio Amp. mosfet 1000 watt 3000 Watt BTL Audio Amplifier AUDIO AMPLIFIER 140 WATT MOSFET 24v 5 amp smps TDA2320A replacement DC MOTOR DRIVE WITH LM324 NE555 IGBT DRIVER TSM1001 lm336 sot23
Text: Standard linear portfolio From innovative devices to application specific products Package Flip chip DFN8 Mini SO8 SO8 S014/16 SO20 SO24 batwing SOT23-3/5 TO92 TQFP44/48 TSSOP8 TSSOP14/16 TSSOP28 Tape width mm Qty/reel (min.order qty) Lead-free available
|
Original
|
PDF
|
S014/16
OT23-3/5
TQFP44/48
TSSOP14/16
TSSOP28
Jan-04
SGSTDLINPO/1003
OF TL084 OPAMP
audio Amp. mosfet 1000 watt
3000 Watt BTL Audio Amplifier
AUDIO AMPLIFIER 140 WATT MOSFET
24v 5 amp smps
TDA2320A replacement
DC MOTOR DRIVE WITH LM324
NE555 IGBT DRIVER
TSM1001
lm336 sot23
|
GSC3302
Abstract: soshin
Text: Control No. : GSC-03302-A Established on May 27, 2011 Product Information 1. 2000MHz Band 30dB Chip Directional Coupler 1.1 TYPE No. : GSC3302-30M2000 RoHS correspondence article 2. Appearance and Construction 2.1 Dimension Unit: mm 5.0 0.4 1 0.4 2 1.5 2
|
Original
|
PDF
|
GSC-03302-A
2000MHz
GSC3302-30M2000
GSC3302
25degC)
125degC)
125deg
soshin
|
GSC3302
Abstract: No abstract text available
Text: Control No. : GSC-03302-A Established on May 27, 2011 Product Information 1. 2000MHz Band 30dB Chip Directional Coupler 1.1 TYPE No. : GSC3302-30M2000 RoHS correspondence article 2. Appearance and Construction 2.1 Dimension Unit: mm 5.0 0.4 1 0.4 2 1.5 2
|
Original
|
PDF
|
GSC-03302-A
2000MHz
GSC3302-30M2000
GSC3302
25degC)
125degC)
125deg
|
RX-2 -G
Abstract: sis 630 11 CT lan Transformer RX-2 YCL isolation PT166415 PT166436 PT166435 RX116
Text: Home Run Analog Front end Module Design for using with SIS 630/540 YCL ♦ Designed to meet Home PNA Specification 1.0. ♦ Internal high voltage circuit. ♦ Implement voice home network service on service wire. ♦ 30dB EMI performance. ♦ Designed for use with SIS 630/540 .
|
Original
|
PDF
|
30-100MHz
100-200MHz
10/100base
1-10MHz
12-13n
PT166415
PT166435
PT166436
PT166415
PT166435
RX-2 -G
sis 630
11 CT lan Transformer
RX-2
YCL isolation
RX116
|
|
|
16ST6149B
Abstract: No abstract text available
Text: 10/100 BASE-T ETHERNET ISOLATION TRANSFORMER P/N:16ST6149B DATA SHEET A.GENERAL SPECIFICATIONS: 1.16 PIN, SMD PACKAGE WITH COMMON CHOKE TO MEET 100 MB /S SPECIFICATION. 2.LOW LEAKAGE INDUCTANCE AND WINDING CAPACITANCES FOR FAST RISE TIME. 3.MORE ECONMICAL THAN DISCRETE TRANSFORMERS.
|
Original
|
PDF
|
16ST6149B
350uH
100KHz
IN10-12-11)
100MHz)
-16dB
30MHz.
|
z144
Abstract: zener Diode B22 1021-P1 cascode transistor array CA3127 CA3127E CA3127M CA3127M96 HP342A ,zener Diode B22
Text: CA3127 S E M I C O N D U C T O R High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the
|
Original
|
PDF
|
CA3127
CA3127
500MHz.
200MHz
z144
zener Diode B22
1021-P1
cascode transistor array
CA3127E
CA3127M
CA3127M96
HP342A
,zener Diode B22
|
HP-343A
Abstract: HP342A y12 t 646 HP343A CA3127E 1021-P1 cascode transistor array 150MIL CA3127 CA3127F
Text: CA3127 S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the
|
Original
|
PDF
|
CA3127
CA3127*
CA3127
500MHz.
100MHz
1021-P1
100MHz
HP343A
HP-343A
HP342A
y12 t 646
HP343A
CA3127E
1021-P1
cascode transistor array
150MIL
CA3127F
|
Untitled
Abstract: No abstract text available
Text: TS652 DIFFERENTIAL VARIABLE GAIN AMPLIFIER . . . . LOW NOISE : 4.6nV/√Hz LOW DISTORTION HIGH SLEW-RATE : 90V/µs WIDE BANDWIDTH : 52MHz @-3dB & 18dB gain GAIN PROGRAMMABLE from -9dB to +30dB with 3dB STEPS POWER-DOWN FUNCTION D SO14 Plastic Micropackage
|
Original
|
PDF
|
TS652
52MHz
TS652ID
TS652
|
z144
Abstract: CA3127 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22
Text: CA3127 High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the
|
Original
|
PDF
|
CA3127
CA3127
500MHz.
z144
1021-P1
cascode transistor array
HP342A
CA3127E
CA3127M
CA3127M96
zener Diode B22
|
GC4 diode
Abstract: TS652 TS652ID
Text: TS652 DIFFERENTIAL VARIABLE GAIN AMPLIFIER • LOW NOISE : 4.6nV/√Hz ■ LOW DISTORTION ■ HIGH SLEW RATE : 90V/µs ■ WIDE BANDWIDTH : 52MHz @ -3dB & 18dB gain ■ GAIN PROGRAMMABLE from -9dB to +30dB with 3dB STEPS ■ POWER DOWN FUNCTION D SO-14 Plastic Micropackage
|
Original
|
PDF
|
TS652
52MHz
SO-14
TS652
GC4 diode
TS652ID
|
DFC1595B44A
Abstract: DFC1606R25A DFC2491K10A dfc1575b40ac DFC1575C20A DFC1575D02A 72MHZ DFC2492G40A DFC1575V20AA
Text: EBä&SQik Hffi3?Ö37 £E Specifications (Characteristics Part Number DFC1575B40AC Center Band Insertion Frequency Width Loss (MHz) (MHz) (dB) 1575.42 ±20.0 £ 2 .0 Ripple (dB) £ 0.5 VSWR Attenuation Dimension Pole (BW) (dB) (mm) Type £ 2 .0 £ 1 0 (fo +100MHz)
|
OCR Scan
|
PDF
|
DFC1575B40AC
100MHz)
fo-100MHz)
DFC1575C20A
40MHz)
DFC1575V20AA
DFC1575D02A
42MHz
DFC1595B44A
DFC1606R25A
DFC2491K10A
72MHZ
DFC2492G40A
|
MEA8020
Abstract: ACB1608 EPC17 BOBBIN ZCYS51R5-M3PA TCXO 9.9 MHZ CST063 QVC10 NLU160805 tdk Isolators ACL2520
Text: SM Components at a Glance Product name Type or Series Part No. Multilayer Ceramic Chip Capacitors C1005 [EIA CC0402] W T 1 0.5 0.55 max. Class I 0.5 to 330pF Class II 220 to 100000pF 1.6 0.8 0.9 max. Class I 0.5 to 1000pF Class II 220pF to 1jiF 2 1.25 1.45 max.
|
OCR Scan
|
PDF
|
C1005
CC0402]
C1608
CC0603]
C2012
CC0805]
C3216
CC1206]
C3225
CC1210]
MEA8020
ACB1608
EPC17 BOBBIN
ZCYS51R5-M3PA
TCXO 9.9 MHZ
CST063
QVC10
NLU160805
tdk Isolators
ACL2520
|
Untitled
Abstract: No abstract text available
Text: HA RR IS SEflICOND S E CT OR im J MGE D 4302271 0032314 1 !HAS HARRIS High-Frequency N -P-N Transistor Array August 1991 Features Description • Galn-Bandwtdth Product f x . >1GHz • Power Gain .30dB (Typ) at 100MHz
|
OCR Scan
|
PDF
|
CA3127*
CA3127
500MHz.
CA3127
16-lead
|
BA501
Abstract: P35-4210 P35-4210-0
Text: - MA R C O N I MTL S LTD 25 D • 37bflSQl □□□□□55 3 ■G M L p ^ E S S E Y t - $ / - / / Three Five Product information 'i i/o " 1 GaAs M M IC RF Switch P35-4210 2GHz S P D T/S P S T Applications • RF Switch to 1000M H z in T05 package 2 0 0 0 MHz in chip form
|
OCR Scan
|
PDF
|
37bflSQl
P35-4210
1000M
10jiA)
BA501
P35-4210
P35-4210-0
|
