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    0.35UM CMOS TRANSISTOR PARAMETERS Search Results

    0.35UM CMOS TRANSISTOR PARAMETERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    0.35UM CMOS TRANSISTOR PARAMETERS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2P4M P 82

    Abstract: of 2p4m transistor 2p4m 2P4M cmos transistor 0.35 um nmos transistor 0.35 um 0.35 um CMOS gate area 0.35um cmos transistor parameters
    Text: 0.35um 2P4M Mixed Signal 3.3V / 5V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um


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    TRANSISTOR 545

    Abstract: No abstract text available
    Text: 0.35um 1P4M Logic 3.3V /5V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um Channel


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    0.35Um 1P4M

    Abstract: nmos transistor 0.35 um
    Text: 0.35um 1P4M Logic 3.3V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um Channel Buried Channel PMOS


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    cmos transistor 0.35 um

    Abstract: UM207 ua 471 TRANSISTOR 641 nmos transistor 0.35 um 815 transistor 0.35Um 1P4M
    Text: 0.35um 1P4M Embedded Flat ROM 3.3V, 5.0V updated in 2005.04.05 Features ƒ Vdd Core/IO 3.3V/3.3V, 5V/5V ƒ Substrate P-type (100), Non-EPI ƒ Well Retrograde Twin Well (NW, PW) ƒ Isolation Conventional LOCOS ƒ Transistor Single-Gate CMOS Channel Surface channel NMOS, Buried channel PMOS


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    2P4M

    Abstract: 2P4M in nmos transistor 0.35 um cmos transistor 0.35 um 0.35Um 2P4M 2P4M datasheet 0.35um 2p4m cmos 0.35Um
    Text: 0.35um 2P4M Embedded Flash 3.3V updated in 2005.03.18 Features ƒ Voltage Logic/Cell 3.3V/10V ƒ Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization Barrier Metal


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    PDF V/10V 2P4M 2P4M in nmos transistor 0.35 um cmos transistor 0.35 um 0.35Um 2P4M 2P4M datasheet 0.35um 2p4m cmos 0.35Um

    BCD8

    Abstract: 0.35uM STI BiCD 0.13 BCD6 LBC7 BiCD-0 LBC5 LBC7 RONA 0.35Um 0.18um LDMOS
    Text: A Deep Trench Isolation integrated in a 0.13um BiCD process technology for analog power ICs. H. Kitahara, T. Tsukihara, M. Sakai, J. Morioka*, K. Deguchi*, K. Yonemura*, T. Kikuchi*, S. Onoue*, K. Shirai*, K. Watanabe* and K. Kimura*. Toshiba Semiconductor Company, 3500 Matsuoka, Oita, Oita, 870-0197, Japan,


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    PDF 7to30V BCD8 0.35uM STI BiCD 0.13 BCD6 LBC7 BiCD-0 LBC5 LBC7 RONA 0.35Um 0.18um LDMOS

    2P4M

    Abstract: cmos transistor 0.35 um transistor 2p4m 0.35Um 2P4M of 2p4m
    Text: 0.35um 2P4M High Voltage 18V / 18V updated in 2005.03.24 Features ƒ Voltage Logic,High Voltage ƒ Starting material 3.3V,18V/18V P-type (100), Non-Epi ƒ Well Structure Logic : Retrograded Twin well (Nwell, Pwell) HV : Diffused Twin well (HNwell, HPwell)


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    PDF 8V/18V 100x100um2 2P4M cmos transistor 0.35 um transistor 2p4m 0.35Um 2P4M of 2p4m

    ATMEL 634

    Abstract: AT355 AT89C51RB2 AT89C51RC2 PDIL40 T89C51IC2
    Text: AT89C51RB2 / RC2 & T89C51IC2 QualPack Qualification Package AT89C51RB2 / RC2 & T89C51IC2 FLASH C51 Microcontrollers AT89C51RB2 / RC2 & T89C51IC2 June 2002 Rev. 1 – 2002 June 1 AT89C51RB2 / RC2 & T89C51IC2 QualPack 1 Table of contents 1 TABLE OF CONTENTS .2


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    PDF AT89C51RB2 T89C51IC2 T89C51IC2 ATMEL 634 AT355 AT89C51RC2 PDIL40

    atmel lot marking

    Abstract: ATMEL 634 AT35500 transistor WL 431 atmel h 306 AT89C51SND1C JESD22-A110 Q100 flash "high temperature data retention" mechanism 0.35uM STI
    Text: AT89C51SND1C QualPack Qualification Package AT89C51SND1C FLASH C51 Microcontroller MP3 Decoder AT89C51SND1C SEPTEMBER 2002 Rev. 0 – 2002 September 1 AT89C51SND1C QualPack 1 Table of contents 1 TABLE OF CONTENTS .2


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    PDF AT89C51SND1C AT89C51SND1C atmel lot marking ATMEL 634 AT35500 transistor WL 431 atmel h 306 JESD22-A110 Q100 flash "high temperature data retention" mechanism 0.35uM STI

    0.35uM STI

    Abstract: MAGNACHIP 0.35um 0.32um CMOS
    Text: 0.25um 1P5M Generic 2.5V / 3.3V or 2.5V / 5V updated in 2005.03.21 Features ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Vdd Core/IO Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric


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    PDF 30um2 36um2 0.35uM STI MAGNACHIP 0.35um 0.32um CMOS

    tsmc 0.35um 2p4m cmos

    Abstract: K2411 specification of scr 2p4m teradyne j750 tester manual 2p4m equivalent Z0853006PSC SCR 2P4M Z84C1510FEC DC04 display Z0853006VSC
    Text: Quality And Reliability Report 2004 Period Covered: 2003


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    PDF DC04-0001 tsmc 0.35um 2p4m cmos K2411 specification of scr 2p4m teradyne j750 tester manual 2p4m equivalent Z0853006PSC SCR 2P4M Z84C1510FEC DC04 display Z0853006VSC

    cmos transistor 0.35 um

    Abstract: 0.35Um c035 ZENER C035 5V IMD2 transistor bsim3v3 polysilicon 20v zener diode 3.3v zener C035
    Text: 0.35µ µm 5V / 3.3V CMOS Process ID: SL [C035] Applications Main Process Flow • Interfacing high density industry- • P Substrate standard 0.35um core logic to 5V • LOCOS Field Oxidation


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    C51 Microcontroller

    Abstract: 7144 transistor equivalent ATMEL 634 atmel lot marking flash "high temperature data retention" mechanism failure rate TDDB JESD22-A110 T89C51CC01 T89C51CC02
    Text: T89C51CC01 QualPack Qualification Package T89C51CC01 CAN / FLASH C51 Microcontroller T89C51CC01 CAN / FLASH C51 Microcontroller JANUARY 2002 Rev. 0 – 2002 January 1 T89C51CC01 QualPack 1 Table of contents 1 TABLE OF CONTENTS .2


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    PDF T89C51CC01 T89C51CC01 C51 Microcontroller 7144 transistor equivalent ATMEL 634 atmel lot marking flash "high temperature data retention" mechanism failure rate TDDB JESD22-A110 T89C51CC02

    AT89C51RD2 -um

    Abstract: AT89C51RD2 AT89C51E2 atmel package marking atmel at89c51ed2 AT89C51ED2 ATMEL 634 AT89C51ED2 UM AT89C5131 JESD22-A101
    Text: AT89C51RD2 / AT89C51ED2 QualPack Qualification Package AT89C51ED2 FLASH 8-bit C51 Microcontroller 64 Kbytes FLASH, 2 Kbytes EEPROM AT89C51RD2 / AT89C51ED2 JULY 2003 Rev. 0 – 2003 July 1 AT89C51RD2 / AT89C51ED2 QualPack 1 Table of contents 1 TABLE OF CONTENTS. 2


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    PDF AT89C51RD2 AT89C51ED2 AT89C51ED2 AT89C51RD2 -um AT89C51E2 atmel package marking atmel at89c51ed2 ATMEL 634 AT89C51ED2 UM AT89C5131 JESD22-A101

    preset resistor

    Abstract: 78xx 12V voltage regulator 5A 78xx voltage regulator XC6220 HIGH CURRENT VOLTAGE REGULATOR USING 78XX XC6206 OF IC 78xx regulator Dynisco XC6221 XC6201
    Text: Basic Knowledge of LDO Voltage Regulator CMOS LINEAR REGULATOR rev. 2 Feb. 2, 2010  CMOS Linear Regulator Overview The history of CMOS linear regulators is relatively new. They have developed with battery-powered portable electronics devices. Since CMOS processes have been used in


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    PDF Graph11] XC6601/XC6210) preset resistor 78xx 12V voltage regulator 5A 78xx voltage regulator XC6220 HIGH CURRENT VOLTAGE REGULATOR USING 78XX XC6206 OF IC 78xx regulator Dynisco XC6221 XC6201

    Untitled

    Abstract: No abstract text available
    Text: Project laboratory and thesis topics at the Faculty of Electrical Engineering and Informatics INTRODUCTION – PLEASE READ CAREFULLY Dear International Student! Thank you for your interest to attend a Project Laboratory course or to prepare your BSc or MSc thesis


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    AT89C5131

    Abstract: JESD22-A118 T89C51CC01 T89C51AC2 JESD22-A101 Q100 T89C51AC2 TS16949 ATMEL package qualification
    Text: T89C51AC2 QualPack Qualification Package T89C51AC2 FLASH C51 Microcontroller with A/D Converter T89C51AC2 FLASH C51 Microcontroller OCTOBER 2003 Rev. 1– 2003 October 1 T89C51AC2 QualPack 1 Table of contents 1 TABLE OF CONTENTS .2


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    PDF T89C51AC2 T89C51AC2 AT89C5131 JESD22-A118 T89C51CC01 T89C51AC2 JESD22-A101 Q100 TS16949 ATMEL package qualification

    MH1RT

    Abstract: 65609E AT56K sn17
    Text: MH1RT QualPack Qualification Package MH1RT Sea of Gates Radiation Tolerant 0.35 µm CMOS MH1RT Sea of Gates 0.35 µm CMOS for Space Environment QualPack Rev.2 – Jan. 2002 1 MH1RT QualPack 1. Table of Contents 1. Table of Contents . 2


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    chip die npn transistor

    Abstract: 0.35um cmos transistor parameters
    Text: Intel Technology Journal Q3’98 The Quality and Reliability of Intel’s Quarter Micron Process Krishna Seshan, Technology and Manufacturing Group, Intel Corp. Timothy J. Maloney, Design Technology, Intel Corp. Kenneth J. Wu, Technology and Manufacturing Group, Intel Corp.


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    AS3693

    Abstract: AS1333 12v subwoofer car amp circuits Wifi Booster Circuit Diagram AS3931 diagram circuit usb mp3 player with radio fm lcd AS3686A AS3693A 500 watt audio subwoofer as3991
    Text: High Performance Analog IC Portfolio Catalog November 2008 Includes Package Guide High Performance Analog Product Line-up 18 20 26 36 48 60 MOBILE ENTERTAINMENT Mobile Entertainment High Performance Microcontrollers Mobile Entertainment Players 68 76 Audio


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    PDF 350mA/W 550-900nm C35EE 32Kx16 AS3693 AS1333 12v subwoofer car amp circuits Wifi Booster Circuit Diagram AS3931 diagram circuit usb mp3 player with radio fm lcd AS3686A AS3693A 500 watt audio subwoofer as3991

    ACT1020

    Abstract: JH05 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 44 pin actel 1020b JEDEC-A113 ACTEL 1020B ACP55 smd U1p Jl03 JL-03
    Text: Quality & Reliability Guide February 2001 2001 Actel Corporation All Rights Reserved. Actel and the Actel logo are trademarks of Actel Corporation. All other brand or product names are the property of their respective owners. Contents 1. Overview of Actel’s Quality and Reliability Guide . . . . . . . . . . . . . . . . . . . .1


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    DC04 display

    Abstract: how to test POWER MOSFET with digital multimeter tektronix 576 curve tracer VISHAY VT 300 WEIGHT INDICATOR TSMC 0.35Um FLUKE 79 manual THERMAL ELECTRIC COOLER hp 4274A 532 nm laser diode PHOTO TRANSISTOR ppt
    Text: Quality And Reliability Report 2005 DC04-0001 Page 1 of 79


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    PDF DC04-0001 DC04 display how to test POWER MOSFET with digital multimeter tektronix 576 curve tracer VISHAY VT 300 WEIGHT INDICATOR TSMC 0.35Um FLUKE 79 manual THERMAL ELECTRIC COOLER hp 4274A 532 nm laser diode PHOTO TRANSISTOR ppt

    XH035

    Abstract: No abstract text available
    Text: 0.35 m Process Family: XH035 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions DESCRIPTION The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target applications are standard cell, semi-custom and


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    PDF XH035 XH035 35-micron

    CTC 880

    Abstract: vhdl coding for analog to digital converter design pure "sine wave" power inverter PURE SINE WAVE inverter schematic diagram sine wave inverter using pic 16C450 16C550 ARM920T ARM940T IEEE1284
    Text: Introduction 1 Table of Contents 1.1 Library Description . 1-1 1.2 Features . 1-2


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    PDF STD111 CTC 880 vhdl coding for analog to digital converter design pure "sine wave" power inverter PURE SINE WAVE inverter schematic diagram sine wave inverter using pic 16C450 16C550 ARM920T ARM940T IEEE1284