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    0.35-UM CMOS STANDARD CELL LIBRARY INVERTER Search Results

    0.35-UM CMOS STANDARD CELL LIBRARY INVERTER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    0.35-UM CMOS STANDARD CELL LIBRARY INVERTER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    design an 8 Bit ALU using VHDL software tools -FP

    Abstract: AOI221 atmel 0928 OAI221 MX 0541 or03d1 ECPD07 atmel 0532 8 bit barrel shifter vhdl code AT56K
    Text: Cell-Based IC Features • • • • • • • Integration of all the elements of a complex electronic system on a single IC. Memory compilers for: RAM, dual-port RAM, ROM, EEPROM and FLASH. Microcontroller and DSP cores: including ARM7TDMITM ARM Thumb , 8051TM ,


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    PDF 8051TM 10Kx16-bit design an 8 Bit ALU using VHDL software tools -FP AOI221 atmel 0928 OAI221 MX 0541 or03d1 ECPD07 atmel 0532 8 bit barrel shifter vhdl code AT56K

    CS81

    Abstract: CS86 CS86ML CS86MN CS86MZ fujitsu frv fujitsu fr-v fujitsu inverter air
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS06-20209-3Ea Semicustom CMOS Standard cell CS86 Series • DESCRIPTION The CS86 series of 0.18 m standard cells is a line of CMOS ASICs based on higher integration implemented by introducing wiring pitch reduction technology and on I/O pad placement technology to the conventional CS81


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    PDF DS06-20209-3Ea CS86MN, CS86MZ, CS86ML) CS81 CS86 CS86ML CS86MN CS86MZ fujitsu frv fujitsu fr-v fujitsu inverter air

    MG1070

    Abstract: No abstract text available
    Text: MG1 MG1 Sea of Gates Series 0.6 Micron CMOS Description The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using


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    PDF BOUT12 MG1070

    atmel 738

    Abstract: MG1070 ATMEL 706 MG1001 atmel 829
    Text: MG1 0.6 Micron Sea of Gates Introduction The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using SCMOS 2/2, a 0.6 micron drawn, 3 metal layers CMOS


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    PDF out12, BOUT12 atmel 738 MG1070 ATMEL 706 MG1001 atmel 829

    jtag 14

    Abstract: No abstract text available
    Text: MG1 0.6 Micron Sea of Gates Introduction The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using SCMOS 2/2, a 0.6 micron drawn, 3 metal layers CMOS


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    PDF out12, BOUT12 jtag 14

    CE81

    Abstract: floor plan for 4 bit adder 722k
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS06-20110-5Ea Semicustom CMOS Embedded array CE81 Series • DESCRIPTION The CE81 series 0.18 m CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 34 million gates which have a gate delay time of 12 ps, resulting in both integration


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    PDF DS06-20110-5Ea CE81 floor plan for 4 bit adder 722k

    tl 0741

    Abstract: 2062 USB adc 809 lpg 889 TAG 8734 ao21 ND2D2 schematic diagram display samsung TAG 8518 sj 2517 transistor
    Text: Introduction 1 Table of Contents 1.1 Library Description . 1-1 1.2 Features . 1-2


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    PDF STDL130 tl 0741 2062 USB adc 809 lpg 889 TAG 8734 ao21 ND2D2 schematic diagram display samsung TAG 8518 sj 2517 transistor

    CS81

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS06-20206-5Ea Semicustom CMOS Standard cell CS81 Series • DESCRIPTION The CS81 series 0.18 m CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 40 million gates which have a gate delay time of 11 ps, resulting in both integration


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    PDF DS06-20206-5Ea CS81

    transistor bL P09

    Abstract: MB625xxx mb62xxxx mb620 transistor phl 218 MB623xxx mb625 MB624xxx N4KD FPT-70P-M
    Text: FUJITSU MIC R OE LE CT RON IC S 23E D 374=17132 0 0 1 0 2 5 3 7 _ F U JITSU T - 4 2 - 4 U UHB SERIES 1.5// CMOS GATE ARRAYS K _ MB62XXXX MB60XXXX September 1988 Edition 1.1 DESCRIPTION The UHB series of 1.5-mlcron CMOS gate arrays Is a highly Integrated low-power, ultra high-speed product family that derives Its


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    PDF MB62XXXX MB60XXXX T-160P F160001S-2C 40-LEAD OIP-40P-M U1M1T60 D40008S-1Ç transistor bL P09 MB625xxx mb620 transistor phl 218 MB623xxx mb625 MB624xxx N4KD FPT-70P-M

    Untitled

    Abstract: No abstract text available
    Text: FU JITSU UHB SERIES 1.5p CMOS GATE ARRAYS MB62XXXX MB60XXXX Septem ber 1988 Edition 1.1 DESCRIPTION The UHB series o f 1 .5-m icron CMOS gate arrays Is a highly Integrated low -pow er, ultra high-speed product fam ily th a t derives its enhanced perform ance and increased user flexibility fro m the use of a system -proven, dual-colum n gate s tru ctu re and 2-layer


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    PDF MB62XXXX MB60XXXX FPT-160PM01) 40-LEAD DIP-40P-M01) 54JTYP 40006S-1C

    Untitled

    Abstract: No abstract text available
    Text: Temic MG1 S e m i c o n d u c t o r s MG1 Sea of Gates Series 0.6 Micron CMOS Description The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using


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    PDF BOUT12

    79C90

    Abstract: No abstract text available
    Text: /T T \ IV II^ n ^ s L ^ G S C 2 0 0 _ S e r ie s 0.35 i CMOS Standard Cell ASICs SEM IC O N D U C TO R Advance Information DS4830 - 3.1 N ovem ber 1998 INTRODUCTION T h e G S C 2 0 0 s ta n d a rd ce ll A S IC fa m ily from M itel Sem iconductor is a standard cell product combining low


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    PDF DS4830 79C90

    SC472

    Abstract: CG21103 CG21403 CG21153 mbcg CG21303 CG21753 Mbcg21153 CG21203 QFP-208 fujitsu
    Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE CG21 Series 0.8-micron CMOS Gate Arrays DESCRIPTION The CG21 series of 0.8 n m CMOS gate arrays are currently available in five device types with from 3 0K to 100K gates. Three more CG21 arrays, ranging from 10Kto 20Kgates, are now underdevelopm ent. These arrays achievethe u ltrafast speed of 0.37 ps per


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    PDF 10Kto 20Kgates, SC472 CG21103 CG21403 CG21153 mbcg CG21303 CG21753 Mbcg21153 CG21203 QFP-208 fujitsu

    Untitled

    Abstract: No abstract text available
    Text: AUA 53 HARRIS Automated Universal Array Radiation Hardened CM O S/SOS Family December 1990 D escription Features • Radiation Hardened ►Total D o s e .> 1 x 1 0 Rads Si ►Survivability . > 1 x 1 0 12 Rads (Si)/s


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    Untitled

    Abstract: No abstract text available
    Text: M T C - 2 2 0 0 0 C M O S 0 .7 n Standard Cell Family Services CMOS Family Features • Technology: CMOS 0 .7 m icron, double or triple la y e r m etal digital or m ix e d a n a lo g /d ig ita l processes, featu rin g self­ aligned tw in tub N an d P w ells, polycide or polysilicon


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    PDF I08CR 08SCR

    OAI221

    Abstract: inverter tm 0917 OAI21
    Text: Cell-Based 1C Features • • • • • • • Integration of all the elements of a complex electronic system on a single 1C. Memory compilers for: RAM, dual-port RAM, ROM, EEPROM and FLASH. Microcontroller and DSP cores: including ARM7TDMI ARM Thumb , 8051™ ,


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    TSC500

    Abstract: 324 EZ 948 BU221 bf063 ST EZ 728 358 ez 802 bfs 417 130 nm CMOS standard cell library ST BF080 bf068
    Text: TSC500 SERIES 1-pm CMOS STANDARD CELLS RELEASE 1.2, APRIL 1989 • High-Performance, 1-pin EPIC CMOS Efficiently Achieves System-Level Designs BOND PAD COMPILER RAM MSI FUNCTION • TSC500 Library Includes Macros for - Static RAMs, Register Files - First-In First-Out Memories


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    PDF TSC500 64-mA TP000LJ TP006LJ TP008LJ TP009LJ TP010LJ 324 EZ 948 BU221 bf063 ST EZ 728 358 ez 802 bfs 417 130 nm CMOS standard cell library ST BF080 bf068

    transistor KT 209 M

    Abstract: No abstract text available
    Text: Preliminary IlM lI September 1989 OPEN ASIC DATA SHEET MC GATE ARRAY SERIES 0.8 MICRON SCMOS FEATURES . SUPER CM OS TECHNOLOGY -1 um DRAWN 2 METAL LAYERS . FLEXIBLE I/O CONFIGURATION : INPUT, OUTPUT, THREE-STATE, VCC & VSS . SILICON GATE 0.8 |im EFFECTIVE CHANNEL


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    B634X

    Abstract: lu1414 Standard TTL AOI Dual 2-Wide 2-Input LU18 c17b2 H8E0
    Text: FUJITSU MICROELECTRONICS 31E I El 3 7 i n 7 ba ÜG13>435 b B F M 0 T - n - l - D January 1990 Edition 1.1 P R O D U C T PR OFILE AU Series CMOS Gate Arrays DESCRIPTION Tha AU series of 1 .2 |im CMOS gate arrays, available in eight device types with from 1 0 K to 100K gates, achieves the ultra fast


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    USART 6402

    Abstract: advantages of master slave jk flip flop verilog code for 8254 timer
    Text: Si GEC P L E S S E Y NOVEM BER 1997 S E M I C O N D U C T O R S D S 4830 - 3.0 GSC200 SERIES 0.35|a CMOS STANDARD CELL ASICs INTRODUCTION The GSC200 standard cell ASIC family from GEC Plessey Semiconductors GPS is a standard cell product combining low power, mixed voltage capability with a very high density


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    PDF GSC200 USART 6402 advantages of master slave jk flip flop verilog code for 8254 timer

    MB625xxx

    Abstract: MB62xxxx MB625 mb622 MB604XXX C1200UHB MB624xxx C-1200UHB MB603xxx mb622xxx
    Text: October 1990 Edition 3.0 FUJITSU DATA SHEET MB62XXXX, MB60XXXX UHB SERIES 1.5m CMOS GATE ARRAYS D E S C R IP T IO N The UHB series of 1.5|lm CMOS gate arrays evolved from the C20K series of 1.5|lm 20,000 gate arrays, originally introduced in 1985. Itsenhanced


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    PDF MB62XXXX, MB60XXXX MB625xxx MB62xxxx MB625 mb622 MB604XXX C1200UHB MB624xxx C-1200UHB MB603xxx mb622xxx

    CDA 10.7 MC 40

    Abstract: No abstract text available
    Text: fíOv ¿4 m O rder this Data Sheet by H4C D MOTOROLA H4C SERIES SEMICONDUCTOR TECHNICAL DATA Advance Information H4C SERIES CMOS ARRAYS and the CDA™ ARCHITECTURE H IG H PERFORM ANCE T R IP L E LAYER M ETAL The H4C Series is Motorola’s highest performance, sub-micron family of


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    PDF kl45B 1PHX33006-4 CDA 10.7 MC 40

    TRANSISTOR PHL 641

    Abstract: MAX1987 2 Input NAND Schmitt Trigger with Open Drain Outp mb62xxxx transistor 1PN M0623 transistor H6C LCC-48C-A01 BO 180 gq102b7
    Text: s ? CO LU • • Œ S ü j u c/> » I S £ œ Dü< i I CO ÜJ o sen • • ú 1= S -a s s e s s s 9 s 3 <*- a2 *1 • i » I I 1 I ! i ! I i 1 1 se 1 § § i 1 § 1 1 5 2 • i D x i83 I I 03 CD X X 3 X 5 i i S 1 ó 1 1 « 5 ó 3 8 •- »- MB62XXXX MBSOxxxx


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    PDF MB62XXXX MB60XXXX FPT-160P-M01) F160001S-2C 40-LEAD DIP-40P-M01) 090i2 291MAX 100I2 D4000SS-JC TRANSISTOR PHL 641 MAX1987 2 Input NAND Schmitt Trigger with Open Drain Outp transistor 1PN M0623 transistor H6C LCC-48C-A01 BO 180 gq102b7

    headland 386

    Abstract: transistor zo 607 MA 7S b2211 full subtractor using ic 74138
    Text: LOGIC LCB300K Cell-Based 5 Volt ASIC Products Databook October 1994 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.


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    PDF LCB300K DB04-000049-00, D-102 I40lg headland 386 transistor zo 607 MA 7S b2211 full subtractor using ic 74138