0.25-UM STANDARD CELL LIBRARY Search Results

0.25-UM STANDARD CELL LIBRARY Result Highlights (6)

Part	Manufacturer	Description
DE6B3KJ151KA4BE01J	Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive
DE6B3KJ471KB4BE01J	Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive
DE6E3KJ152MN4A	Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive
DE6B3KJ101KA4BE01J	Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive
DE6B3KJ331KB4BE01J	Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive
DE6E3KJ102MN4A	Murata Manufacturing Co Ltd	Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive

0.25-UM STANDARD CELL LIBRARY Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
bsim3 model Abstract: "X-Fab" Core cell library CX06 transistors bipolar CMOS spice model PMOS MODEL PARAMETERS SPICE TS16 analog devices transistor tutorials mos15 bsim3 Text: 0.6 m CMOS Process CX06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX06 Series is X-FAB‘s 0.6 Micron Modular Mixed Signal Technology. Main target applications	Original	PDF
CMOS Abstract: AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model Text: 0.25 m CMOS Process FC025 MIXED-SIGNAL FOUNDRY EXPERTS 0.25 Micron CMOS Technology Description Key Features Applications Quality Assurance Deliverables Digital Libraries Analog Libraries Primitive Devices The FC025 series is X-FAB’s 0.25-micron Modular	Original	PDF	FC025 FC025 25-micron CMOS AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model
CMOS Abstract: No abstract text available Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications	Original	PDF
NMOS depletion pspice model Abstract: NMOS MODEL PARAMETERS SPICE "X-Fab" Core cell library PSPICE MODEL R2R bsim3 ADS bsim3 model SPECTRE MODEL QS 100 NPN Transistor RP20 analog devices transistor tutorials Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications	Original	PDF
LSI LOGIC Abstract: 700UM Text: Chip Planning w/ Avant! Planet -PL Workbook G11 Copyright LSI Logic Corporation 1999, 2000 All Rights Reserved. Chip Planning w/ Avant! Planet -PL Software Training Workbook (G11) Produced by the Customer Education Group May 2000 Copyright LSI Logic Corporation 1999, 2000. All rights reserved.	Original	PDF
ARM1136J-S Abstract: ELDEC TOSHIBA TC160 ARM1136J TOSHIBA cmos image 1995 tc190c CMOS GATE ARRAYs toshiba TC190G TC280 Celaro Text: 2007-3 PRODUCT GUIDE CMOS ASICs To ensure competitiveness in the marketplace, you will need to produce more sophisticated, more technology-intensive and higher value-added products, using a process of technological innovation and systematic marketing. Toshiba's application-specific	Original	PDF	BCE0032A S-167 BCE0032B ARM1136J-S ELDEC TOSHIBA TC160 ARM1136J TOSHIBA cmos image 1995 tc190c CMOS GATE ARRAYs toshiba TC190G TC280 Celaro
CMOS Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion Text: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.	Original	PDF
S29JL032H70 Abstract: No abstract text available Text: FUJITSU MICROELECTRONICS PRODUCT GUIDE 2009.10 Product Guide [ ASSP•Memory•ASIC ] PG00-00091-3E Technical Documentation of Electronic Devices DATA BOOK PRODUCT GUIDE DVD (GENERAL) DATA SHEET MANUAL FUJITSU SEMICONDUCTOR DATA SHEET Semiconductor Data Book	Original	PDF	PG00-00091-3E ACD-10131 CD-10131 DS04-27211-5E MB3789 S29JL032H70
GR23 Abstract: No abstract text available Text: 4. Back-End Timing Closure for HardCopy Series Devices H51013-2.4 Introduction Back-end implementation of HardCopy series devices meet design requirements through a timing closure process similar to the methodology used for today’s standard cell ASICs.	Original	PDF	H51013-2 GR23
GR23 Abstract: No abstract text available Text: 14. Back-End Timing Closure for HardCopy Series Devices H51013-2.4 Introduction Back-end implementation of HardCopy series devices meet design requirements through a timing closure process similar to the methodology used for today’s standard cell ASICs.	Original	PDF	H51013-2 GR23
design an 8 Bit ALU using VHDL software tools -FP Abstract: AOI221 atmel 0928 OAI221 MX 0541 or03d1 ECPD07 atmel 0532 8 bit barrel shifter vhdl code AT56K Text: Cell-Based IC Features • • • • • • • Integration of all the elements of a complex electronic system on a single IC. Memory compilers for: RAM, dual-port RAM, ROM, EEPROM and FLASH. Microcontroller and DSP cores: including ARM7TDMITM ARM Thumb , 8051TM ,	Original	PDF	8051TM 10Kx16-bit design an 8 Bit ALU using VHDL software tools -FP AOI221 atmel 0928 OAI221 MX 0541 or03d1 ECPD07 atmel 0532 8 bit barrel shifter vhdl code AT56K
GR23 Abstract: C1110 Text: 22. Back-End Timing Closure for HardCopy Series Devices H51013-2.3 Introduction Back-end implementation of HardCopy series devices meet design requirements through a timing closure process similar to the methodology used for today’s standard cell ASICs.	Original	PDF	H51013-2 GR23 C1110
LSI Logic Abstract: primetime si user guide 74426 LSI logic array components lsi ndl Text: Lr Lecture 1 Chip Planning Tools Flow and Licensing 06-00 1.1 1 We Will Discuss… • • • • • • Avant! Tools Overview High Level Planet -PL Flow Detailed Chip Planning Tools Flow Design Methodology Flow Licensing Issues lsidesmgr & Design Setup	Original	PDF	G10/G11/G12) LSI Logic primetime si user guide 74426 LSI logic array components lsi ndl
transistor bL P09 Abstract: MB625xxx mb62xxxx mb620 transistor phl 218 MB623xxx mb625 MB624xxx N4KD FPT-70P-M Text: FUJITSU MIC R OE LE CT RON IC S 23E D 374=17132 0 0 1 0 2 5 3 7 _ F U JITSU T - 4 2 - 4 U UHB SERIES 1.5// CMOS GATE ARRAYS K _ MB62XXXX MB60XXXX September 1988 Edition 1.1 DESCRIPTION The UHB series of 1.5-mlcron CMOS gate arrays Is a highly Integrated low-power, ultra high-speed product family that derives Its	OCR Scan	PDF	MB62XXXX MB60XXXX T-160P F160001S-2C 40-LEAD OIP-40P-M U1M1T60 D40008S-1Ç transistor bL P09 MB625xxx mb620 transistor phl 218 MB623xxx mb625 MB624xxx N4KD FPT-70P-M

Untitled Abstract: No abstract text available Text: FU JITSU UHB SERIES 1.5p CMOS GATE ARRAYS MB62XXXX MB60XXXX Septem ber 1988 Edition 1.1 DESCRIPTION The UHB series o f 1 .5-m icron CMOS gate arrays Is a highly Integrated low -pow er, ultra high-speed product fam ily th a t derives its enhanced perform ance and increased user flexibility fro m the use of a system -proven, dual-colum n gate s tru ctu re and 2-layer	OCR Scan	PDF	MB62XXXX MB60XXXX FPT-160PM01) 40-LEAD DIP-40P-M01) 54JTYP 40006S-1C
Pioneer SSA 40 Abstract: G4060 LT 6732 IMI6140 G4420 Text: /y INTERNATIONAL MICROCIRCUITS INCORPORATED ^ G io v o o /i/û o o f / V ^ u y I r ’; ~ j> LTj _ < ¿6 ' >L ^ '- i-G -p - PRODUCT FEATURES IM I DESIGN CYCLE FLOWCHART 2.0 and 3.5 Micron CMOS Single and Dual Level Metal cr~ Up to 6200 2-input NAND equivalents ^	OCR Scan	PDF	885-10K Pioneer SSA 40 G4060 LT 6732 IMI6140 G4420
Pioneer SSA 40 Abstract: g70490 G4060 IMI6170 G70250 IMI6000 IMI6140 IMI6270 IMI6330 IMI6430 Text: INTERNATIONAL M ICROCIRCUITS -INCORPORATED PRO DUCT FEATURES IM I D E S IG N CYCLE FLOW CHART 2.0 and 3.5 Micron CMOS er-' Single and Dual Level Metal Up to 6200 2-input NAN D equivalents ^ Up to 158 I/O connections Ultra High Speed TTL and CMOS Compatible	OCR Scan	PDF
130 nm CMOS standard cell library Abstract: 180 nm CMOS standard cell library Synopsys 130 nm CMOS standard cell library ST C4002-1 VGC450/VGC453 Text: V L S I Tech n o lo gy , in c . oec t a PRELIMINARY VGC450/VGC453 LIBRARY O.8-MICRON GATE A R R A Y S E R IE S FEATURES • Advanced 0.7-micron effective channel length , 0.8-micron (drawn gate length) silicon gate CMOS technology • Fully integrated with COMPASS	OCR Scan	PDF	VGC450/VGC453 VGC453 VGC450 130 nm CMOS standard cell library 180 nm CMOS standard cell library Synopsys 130 nm CMOS standard cell library ST C4002-1
macrocell ecl Abstract: 4S514 Text: HONEYWELL DIGITAL PRODUCT bb dË J 4SS14S3 0000D43 *=1 T-42-11-13 JUNE 1985 ECL GATE ARRAY HE8000 PRO DUCT DESCRIPTION The HE8000 Gate Array Figure 1 is a 250 picosecond, 8000 equivalent gate density Very Large Scale Integra tion (VLSI) monolithic integrated circuit built using	OCR Scan	PDF	4SS14S3 0000D43 T-42-11-13 HE8000 HE8000 10K/KH macrocell ecl 4S514
integrated circuit TL 2262 Abstract: PT6042 180 nm CMOS standard cell library Synopsys compass ic ND02D2 0.03 um CMOS technology VSC470 Text: V L S I TECHNOLOGY INC M7E D VTI V L S I T ech n o lo g y , in c . T - m PRELIMINARY - m VSC470 SERIES 0.8-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.7-micron channel length, 0.8-micron drawn gate length silicon gate CMOS technology	OCR Scan	PDF	VSC470 integrated circuit TL 2262 PT6042 180 nm CMOS standard cell library Synopsys compass ic ND02D2 0.03 um CMOS technology
Fairchild ZN 1010 Abstract: GENERAL INSTRUMENT west 2500 ic ZN 415 FGE2000 Text: FGE Series ECL Gate Arrays PAIRCHIL.D A Schlum berc T'HO Qr>y 005596 January 1986 Description U/v\A m b The FGE Series of ECL gate arrays are the fastest silicon gate arrays com m ercially available. These advanced ECL gate arrays, ranging from 100 to 2840 equivalent gates, offer	OCR Scan	PDF	F100K, FGE2500) 28ngton Fairchild ZN 1010 GENERAL INSTRUMENT west 2500 ic ZN 415 FGE2000
H7442 Abstract: Matra-Harris Semiconductor Text: MB GATE ARRAY SERIES 2/t/2 METAL LAYERS M ÌM ÌIII /MATRA' HARRIS SEMICONDUCTOR MB 850 • MB 1300 • MB 2000 MB 2700 • MB 4000 - MB 5000 -MB 7500 MAY 1986 PR B LÎISIÈ S A R V Features MACRO CELL LIBRARY EXTENSION CAPABILITY : - COMBINATIONAL AND SEQUENTIAL	OCR Scan	PDF
TSC500 Abstract: 324 EZ 948 BU221 bf063 ST EZ 728 358 ez 802 bfs 417 130 nm CMOS standard cell library ST BF080 bf068 Text: TSC500 SERIES 1-pm CMOS STANDARD CELLS RELEASE 1.2, APRIL 1989 • High-Performance, 1-pin EPIC CMOS Efficiently Achieves System-Level Designs BOND PAD COMPILER RAM MSI FUNCTION • TSC500 Library Includes Macros for - Static RAMs, Register Files - First-In First-Out Memories	OCR Scan	PDF	TSC500 64-mA TP000LJ TP006LJ TP008LJ TP009LJ TP010LJ 324 EZ 948 BU221 bf063 ST EZ 728 358 ez 802 bfs 417 130 nm CMOS standard cell library ST BF080 bf068
MQFPL160 Abstract: No abstract text available Text: T em ic MG2RT Semiconductors Radiation Tolerant 0.5-jiim CMOS Sea-of-Gates 100k Rad Low Dose Rate Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured	OCR Scan	PDF	OAI22 MQFPL160

0.25-UM STANDARD CELL LIBRARY Search Results

0.25-UM STANDARD CELL LIBRARY Result Highlights (6)

0.25-UM STANDARD CELL LIBRARY Datasheets Context Search

bsim3 model

CMOS

CMOS

NMOS depletion pspice model

LSI LOGIC

ARM1136J-S

CMOS

S29JL032H70

GR23

GR23

design an 8 Bit ALU using VHDL software tools -FP

GR23

LSI Logic

transistor bL P09

Untitled

Pioneer SSA 40

Pioneer SSA 40

130 nm CMOS standard cell library

macrocell ecl

integrated circuit TL 2262

Fairchild ZN 1010

H7442

TSC500

MQFPL160