bsim3 model
Abstract: "X-Fab" Core cell library CX06 transistors bipolar CMOS spice model PMOS MODEL PARAMETERS SPICE TS16 analog devices transistor tutorials mos15 bsim3
Text: 0.6 m CMOS Process CX06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX06 Series is X-FAB‘s 0.6 Micron Modular Mixed Signal Technology. Main target applications
|
Original
|
PDF
|
|
CMOS
Abstract: AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model
Text: 0.25 m CMOS Process FC025 MIXED-SIGNAL FOUNDRY EXPERTS 0.25 Micron CMOS Technology Description Key Features Applications Quality Assurance Deliverables Digital Libraries Analog Libraries Primitive Devices The FC025 series is X-FAB’s 0.25-micron Modular
|
Original
|
PDF
|
FC025
FC025
25-micron
CMOS
AF32K8AF25
NMOS native pspice model
resistor bsim3
6T SRAM
micron cmos sensor connection
BSIM3
nmos transistor
pmos Vt
bsim3 model
|
CMOS
Abstract: No abstract text available
Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications
|
Original
|
PDF
|
|
NMOS depletion pspice model
Abstract: NMOS MODEL PARAMETERS SPICE "X-Fab" Core cell library PSPICE MODEL R2R bsim3 ADS bsim3 model SPECTRE MODEL QS 100 NPN Transistor RP20 analog devices transistor tutorials
Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications
|
Original
|
PDF
|
|
CMOS
Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion
Text: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.
|
Original
|
PDF
|
|
design an 8 Bit ALU using VHDL software tools -FP
Abstract: AOI221 atmel 0928 OAI221 MX 0541 or03d1 ECPD07 atmel 0532 8 bit barrel shifter vhdl code AT56K
Text: Cell-Based IC Features • • • • • • • Integration of all the elements of a complex electronic system on a single IC. Memory compilers for: RAM, dual-port RAM, ROM, EEPROM and FLASH. Microcontroller and DSP cores: including ARM7TDMITM ARM Thumb , 8051TM ,
|
Original
|
PDF
|
8051TM
10Kx16-bit
design an 8 Bit ALU using VHDL software tools -FP
AOI221
atmel 0928
OAI221
MX 0541
or03d1
ECPD07
atmel 0532
8 bit barrel shifter vhdl code
AT56K
|
S29JL032H70
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS PRODUCT GUIDE 2009.10 Product Guide [ ASSP•Memory•ASIC ] PG00-00091-3E Technical Documentation of Electronic Devices DATA BOOK PRODUCT GUIDE DVD (GENERAL) DATA SHEET MANUAL FUJITSU SEMICONDUCTOR DATA SHEET Semiconductor Data Book
|
Original
|
PDF
|
PG00-00091-3E
ACD-10131
CD-10131
DS04-27211-5E
MB3789
S29JL032H70
|
ARM1136J-S
Abstract: ELDEC TOSHIBA TC160 ARM1136J TOSHIBA cmos image 1995 tc190c CMOS GATE ARRAYs toshiba TC190G TC280 Celaro
Text: 2007-3 PRODUCT GUIDE CMOS ASICs To ensure competitiveness in the marketplace, you will need to produce more sophisticated, more technology-intensive and higher value-added products, using a process of technological innovation and systematic marketing. Toshiba's application-specific
|
Original
|
PDF
|
BCE0032A
S-167
BCE0032B
ARM1136J-S
ELDEC
TOSHIBA TC160
ARM1136J
TOSHIBA cmos image 1995
tc190c
CMOS GATE ARRAYs toshiba
TC190G
TC280
Celaro
|
XH035 library
Abstract: depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 XH035 analog devices transistor tutorials MOS RM3
Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and
|
Original
|
PDF
|
XA035
XA035
35-micron
XH035
XH035 library
depl
"X-Fab" Core cell library
nmos transistor 0.35 um
cmos transistor 0.35 um
CMOS spice model
Q100
analog devices transistor tutorials
MOS RM3
|
s29gl032n90
Abstract: MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11
Text: covPG00-00071e.fm 1 ページ 2007年5月10日 木曜日 午前11時29分 For further information please contact: Japan FUJITSU LIMITED Electronic Devices Business Unit Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku,
|
Original
|
PDF
|
covPG00-00071e
PG00-00071-2E
s29gl032n90
MB15H121
S29GL064N90
s29gl256p90
S29GL01GP13
S29GL128P90
MB86A20
S29AL008J55
S29AL016J55
s29gl128p11
|
MOS RM3
Abstract: mos rm3 data XO035 Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"
Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing
|
Original
|
PDF
|
XO035
XO035
35micron
MOS RM3
mos rm3 data
Silicon Image 1364
cmos transistor 0.35 um
analog devices transistor tutorials
"X-Fab" Core cell library
6E-08
opto mos application
ESD "p-well" n-well"
|
MOS RM3
Abstract: No abstract text available
Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing
|
Original
|
PDF
|
XO035
XO035
35-micron
MOS RM3
|
transistor bL P09
Abstract: MB625xxx mb62xxxx mb620 transistor phl 218 MB623xxx mb625 MB624xxx N4KD FPT-70P-M
Text: FUJITSU MIC R OE LE CT RON IC S 23E D 374=17132 0 0 1 0 2 5 3 7 _ F U JITSU T - 4 2 - 4 U UHB SERIES 1.5// CMOS GATE ARRAYS K _ MB62XXXX MB60XXXX September 1988 Edition 1.1 DESCRIPTION The UHB series of 1.5-mlcron CMOS gate arrays Is a highly Integrated low-power, ultra high-speed product family that derives Its
|
OCR Scan
|
PDF
|
MB62XXXX
MB60XXXX
T-160P
F160001S-2C
40-LEAD
OIP-40P-M
U1M1T60
D40008S-1Ç
transistor bL P09
MB625xxx
mb620
transistor phl 218
MB623xxx
mb625
MB624xxx
N4KD
FPT-70P-M
|
Untitled
Abstract: No abstract text available
Text: FU JITSU UHB SERIES 1.5p CMOS GATE ARRAYS MB62XXXX MB60XXXX Septem ber 1988 Edition 1.1 DESCRIPTION The UHB series o f 1 .5-m icron CMOS gate arrays Is a highly Integrated low -pow er, ultra high-speed product fam ily th a t derives its enhanced perform ance and increased user flexibility fro m the use of a system -proven, dual-colum n gate s tru ctu re and 2-layer
|
OCR Scan
|
PDF
|
MB62XXXX
MB60XXXX
FPT-160PM01)
40-LEAD
DIP-40P-M01)
54JTYP
40006S-1C
|
|
Pioneer SSA 40
Abstract: g70490 G4060 IMI6170 G70250 IMI6000 IMI6140 IMI6270 IMI6330 IMI6430
Text: INTERNATIONAL M ICROCIRCUITS -INCORPORATED PRO DUCT FEATURES IM I D E S IG N CYCLE FLOW CHART 2.0 and 3.5 Micron CMOS er-' Single and Dual Level Metal Up to 6200 2-input NAN D equivalents ^ Up to 158 I/O connections Ultra High Speed TTL and CMOS Compatible
|
OCR Scan
|
PDF
|
|
TSC500
Abstract: 324 EZ 948 BU221 bf063 ST EZ 728 358 ez 802 bfs 417 130 nm CMOS standard cell library ST BF080 bf068
Text: TSC500 SERIES 1-pm CMOS STANDARD CELLS RELEASE 1.2, APRIL 1989 • High-Performance, 1-pin EPIC CMOS Efficiently Achieves System-Level Designs BOND PAD COMPILER RAM MSI FUNCTION • TSC500 Library Includes Macros for - Static RAMs, Register Files - First-In First-Out Memories
|
OCR Scan
|
PDF
|
TSC500
64-mA
TP000LJ
TP006LJ
TP008LJ
TP009LJ
TP010LJ
324 EZ 948
BU221
bf063
ST EZ 728
358 ez 802
bfs 417
130 nm CMOS standard cell library ST
BF080
bf068
|
integrated circuit TL 2262
Abstract: PT6042 180 nm CMOS standard cell library Synopsys compass ic ND02D2 0.03 um CMOS technology VSC470
Text: V L S I TECHNOLOGY INC M7E D VTI V L S I T ech n o lo g y , in c . T - m PRELIMINARY - m VSC470 SERIES 0.8-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.7-micron channel length, 0.8-micron drawn gate length silicon gate CMOS technology
|
OCR Scan
|
PDF
|
VSC470
integrated circuit TL 2262
PT6042
180 nm CMOS standard cell library Synopsys
compass ic
ND02D2
0.03 um CMOS technology
|
H7442
Abstract: Matra-Harris Semiconductor
Text: MB GATE ARRAY SERIES 2/t/2 METAL LAYERS M ÌM ÌIII /MATRA' HARRIS SEMICONDUCTOR MB 850 • MB 1300 • MB 2000 MB 2700 • MB 4000 - MB 5000 -MB 7500 MAY 1986 PR B LÎISIÈ S A R V Features MACRO CELL LIBRARY EXTENSION CAPABILITY : - COMBINATIONAL AND SEQUENTIAL
|
OCR Scan
|
PDF
|
|
MQFPL160
Abstract: No abstract text available
Text: T em ic MG2RT Semiconductors Radiation Tolerant 0.5-jiim CMOS Sea-of-Gates 100k Rad Low Dose Rate Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured
|
OCR Scan
|
PDF
|
OAI22
MQFPL160
|
IMI7340
Abstract: IMI7160 IMI7000 IMI7080 IMI7220 G4060 IMI712K G4000 IMI7490 IMI7620
Text: m iT O Q Q ^ A M IU f CMOS GATE ARRAY NTERNATIONAL M IC R O CIR CU ITS I NC TELEPHONE: 408 263-6300 TWX: 910 338 2032 FAX: 408 263-6571 Oxide-isolated silicon-gate process Dual level metalization Fully autoroutable 792 to 12,000 2-input NAND equivalents Up to 220 I/O connections
|
OCR Scan
|
PDF
|
IMI7000
IMI7340
IMI7160
IMI7080
IMI7220
G4060
IMI712K
G4000
IMI7490
IMI7620
|
CMOS-10
Abstract: f-002
Text: CMOS-10 2.5-Volt, 0.25-M icron drawn CMOS G ate Array NEC NEC Electronics Inc. Preliminary March 1997 Figure 1. Tape BGA and Chip Size Package Description In CMOS-IO, NEC combines high-performance CMOS technology with an advanced 2.5-volt block library and an
|
OCR Scan
|
PDF
|
CMOS-10
IEEE1394
G1GSG77
f-002
|
Untitled
Abstract: No abstract text available
Text: Logic Cell A rray M 2 0 6 4 /M 2 0 1 8 Features/Benefits • CMOS programmable Logic Cell Array LCA for replacement of standard logic • Completely reconfigurable by the user in the final system • High performance equivalent to TTL SSI/MSI - 33 MHz flip-flop toggle rate (-33 speed grade)
|
OCR Scan
|
PDF
|
M2064
M2018
|
PT6005
Abstract: VSC300
Text: V L S I TECHNOLOGY INC IflE D T3ÔÔ347 üüü32bfl 4 VLSI T ech n o lo gy, inc. VSC300 SERIES 1-MICRON HIGH-PERFORMANCE STANDARD CELL FEATURES • A dvanced 1-m icron draw n gate length , silicon gate C M O S , 2 -la ye r m etal technology • Fast design tu rn-around tim e w ith
|
OCR Scan
|
PDF
|
32bfl
VSC300
PT6005
|
Untitled
Abstract: No abstract text available
Text: M T C - 2 2 0 0 0 C M O S 0 .7 n Standard Cell Family Services CMOS Family Features • Technology: CMOS 0 .7 m icron, double or triple la y e r m etal digital or m ix e d a n a lo g /d ig ita l processes, featu rin g self aligned tw in tub N an d P w ells, polycide or polysilicon
|
OCR Scan
|
PDF
|
I08CR
08SCR
|