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    0.13 BSIM3V3 Search Results

    0.13 BSIM3V3 Datasheets Context Search

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    0.13 bsim3v3

    Abstract: 2SK3820
    Text: 2SK3820 SPICE PARAMETER Nch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 VERSION 3.2 VTH0 2.40 NLX 4.70E-07 DVT2 -0.01 UB 3.50E-21 AGS -1.00 RDSW 4.23E+04 WINT NFACTOR 0.80 CDSCD PCLM 0.30 DROUT 0.96 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 6.00E-12 CGDL 2.20E-10


    Original     		PDF 2SK3820 70E-07 50E-21 00E-12 20E-10 0E-09 00E-07 3290184E-6 3290184E-12 07E-05 0.13 bsim3v3 2SK3820

    bsim3

    Abstract: MCH6320 0.13 bsim3v3
    Text: MCH6320 SPICE PARAMETER Pch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 VERSION 3.2 VTH0 -0.8 NLX 3.2E-07 DVT2 -0.01 UB 1.0E-21 AGS 0.04 RDSW 1.9E+03 WINT NFACTOR 0.7 CDSCD PCLM 2.8 DROUT 0.96 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 5.0E-11 CGDL 6.0E-10 CLC


    Original     		PDF MCH6320 2E-07 0E-21 0E-11 0E-10 0E-09 0E-08 578202E-6 578202E-12 0E-03 bsim3 MCH6320 0.13 bsim3v3

    2SK370* spice

    Abstract: 0.13 bsim3v3 2SK3704 6169 bsim3 26E03
    Text: 2SK3704 SPICE PARAMETER Nch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 VERSION 3.2 VTH0 2.4 NLX 4.7E-07 DVT2 -0.01 UB 1.0E-21 AGS 0.58 RDSW 1.67E+04 WINT NFACTOR 0.53 CDSCD PCLM 0.3 DROUT 0.96 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 2.0E-11 CGDL 3.0E-10 CLC


    Original     		PDF 2SK3704 7E-07 0E-21 0E-11 0E-10 0E-09 0E-07 6169770E-6 6169770E-12 3E-05 2SK370* spice 0.13 bsim3v3 2SK3704 6169 bsim3 26E03

    0.13 bsim3v3

    Abstract: MCH3377
    Text: MCH3377 SPICE PARAMETER Pch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 3.2 VERSION VTH0 -0.80 NLX 3.20E-07 DVT2 -0.01 UB 1.13E-21 AGS 0.28 2.25E+03 RDSW WINT 0.56 NFACTOR CDSCD PCLM 1.60 DROUT 0.96 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 3.00E-11 CGDL 4.00E-10


    Original     		PDF MCH3377 20E-07 13E-21 00E-11 00E-10 0E-09 00E-08 578202E-6 578202E-12 12E-03 0.13 bsim3v3 MCH3377

    VEC2303

    Abstract: 13E02 18E-09
    Text: VEC2303 SPICE PARAMETER Pch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 VERSION 3.2 VTH0 -0.628 NLX 3.2E-07 DVT2 -0.01 UB 1.0E-21 AGS -0.32 RDSW 2.73E+03 WINT NFACTOR 0.56 CDSCD PCLM 1.76 DROUT 0.62 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 4.2E-11 CGDL 6.1E-10


    Original     		PDF VEC2303 2E-07 0E-21 2E-11 1E-10 0E-07 796596E-6 796596E-12 3E-02 VEC2303 13E02 18E-09

    bsim3

    Abstract: 0.13 bsim3v3 MCH6321 22E04
    Text: MCH6321 SPICE PARAMETER Pch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 VERSION 3.2 VTH0 -0.8 NLX 3.2E-07 DVT2 -0.01 UB 1.13E-21 AGS 0.28 RDSW 2.25E+03 WINT NFACTOR 0.56 CDSCD PCLM 1.6 DROUT 0.96 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 3.0E-11 CGDL 4.0E-10


    Original     		PDF MCH6321 2E-07 13E-21 0E-11 0E-10 0E-09 0E-08 578202E-6 578202E-12 12E-03 bsim3 0.13 bsim3v3 MCH6321 22E04

    0.13 bsim3v3

    Abstract: VEC2607
    Text: VEC2607_Pch SPICE PARAMETER Pch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 VERSION 3.2 VTH0 -0.628 NLX 3.2E-07 DVT2 -0.01 UB 1.0E-21 AGS -0.32 RDSW 2.73E+03 WINT NFACTOR 0.56 CDSCD PCLM 1.76 DROUT 0.62 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 4.2E-11 CGDL 6.1E-10


    Original     		PDF VEC2607 2E-07 0E-21 2E-11 1E-10 0E-07 796596E-6 796596E-12 3E-02 0.13 bsim3v3

    rpp1k1

    Abstract: No abstract text available
    Text: 0.18 m Process Family: XT018 0.18 Micron HV SOI CMOS Technology DESCRIPTION The XT018 series is X-FAB’s 0.18 micron Modular High-voltage SOI CMOS Technology. Based on SOI wafers and the industrial standard single poly with up to six metal layers 0.18-micron drawn gate


    Original     		PDF XT018 XT018 18-micron rpp1k1

    0.6 um cmos process

    Abstract: CMOS Process Family hv 082 1P2M pmos depletion nmos 0.13 um CMOS nmos pmos array trench mos HV diode
    Text: 0.6 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XT06 SOI CMOS with extended HV Technology Modular 0.6 µm Trench Isolated SOI CMOS process for analog/mixed-signal and high-voltage applications. Module Overview CORE CORE The process offers reduced parasitics which results in


    Original     		PDF

    XP018

    Abstract: No abstract text available
    Text: 0.18 m Process Family: XP018 0.18 Micron CMOS Analog Mixed-Signal Process Technology DESCRIPTION The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS High Performance Analog Mixed-Signal Technology. Based upon the industrial standard single


    Original     		PDF XP018 XP018 18-micron

    CMOS Process Family

    Abstract: XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor XP018 process flow diagram "X-Fab" Core cell library
    Text: 0.18 µm CMOS Process Family XP018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron CMOS Power Management Process Technology Description The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS Power Management Technology. Based upon the industrial standard single


    Original     		PDF XP018 XP018 18-micron CMOS Process Family XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor process flow diagram "X-Fab" Core cell library

    0.6 um cmos process

    Abstract: bsim3 Trench MOS Schottky Rectifier MICRON POWER RESISTOR Mos BSIM3 SOI pmos 60V-20 MICRON RESISTOR Mos MOS RM3 P-Channel Depletion Mosfets
    Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation


    Original     		PDF

    nmos transistor 0.35 um

    Abstract: npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials
    Text: 0.6 µm BiCMOS Process Family XHB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular HV BCD Technology Description The XHB06 is X-FAB's 0.6 Micron High-Voltage Bipolar CMOS DMOS BCD Technology, optimized for applications requiring operating voltages of 5V to 30V. Main target applications are power


    Original     		PDF XHB06 XHB06 nmos transistor 0.35 um npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials

    CMOS

    Abstract: MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model
    Text: 0.18 µm CMOS Process XC018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular RF enabled CMOS Logic and Analog Technology 0.18-micron drawn gate length N-well process, modules are also available for metal-insulatormetal capacitors, high resistive poly, dual gate


    Original     		PDF XC018 18-micron XC018 CMOS MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model

    XH018

    Abstract: sonos MOS RM3 model values for 0.18 micron technology cmos 0.18 um CMOS parameters analog devices transistor tutorials CMOS spice model bsim3 0.18 micron parameters EPI EEPROM bsim3 circuit model
    Text: 0.18 µm CMOS Process Family XH018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular Mixed Signal HV CMOS Technology Description The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six


    Original     		PDF XH018 XH018 18-micron sonos MOS RM3 model values for 0.18 micron technology cmos 0.18 um CMOS parameters analog devices transistor tutorials CMOS spice model bsim3 0.18 micron parameters EPI EEPROM bsim3 circuit model

    bsim3 0.18 micron parameters

    Abstract: bsim3 model for 0.18 micron technology for hspice 0.18 um CMOS parameters bsim3 model model values for 0.18 micron technology cmos XH018 CMOS Process Family model values for 0.25 micron technology cmos aadcc01_3v3 0.18-um CMOS technology length and width
    Text: 0.18 µm CMOS Process Family XH018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular Mixed Signal HV CMOS Technology Description The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six


    Original     		PDF XH018 XH018 18-micron bsim3 0.18 micron parameters bsim3 model for 0.18 micron technology for hspice 0.18 um CMOS parameters bsim3 model model values for 0.18 micron technology cmos CMOS Process Family model values for 0.25 micron technology cmos aadcc01_3v3 0.18-um CMOS technology length and width

    spice model Tunnel diode

    Abstract: dpsN TUNNEL DIODE spice model
    Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation


    Original     		PDF

    CMOS

    Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion
    Text: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.


    Original     		PDF

    XH035

    Abstract: mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3
    Text: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target


    Original     		PDF XH035 XH035 35-micron mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3