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    0.1 250V Search Results

    0.1 250V Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    LT1220CS8#TRPBF Analog Devices 45MHz, 250V/µs Op Amp Visit Analog Devices Buy
    LT1220CN8#PBF Analog Devices 45MHz, 250V/µs Op Amp Visit Analog Devices Buy
    LT1220CS8#PBF Analog Devices 45MHz, 250V/µs Op Amp Visit Analog Devices Buy
    LT1221CS8#TRPBF Analog Devices 150MHz, 250V/µs, AV /=4 Op Amp Visit Analog Devices Buy
    LT1221CN8#PBF Analog Devices 150MHz, 250V/µs, AV /=4 Op Amp Visit Analog Devices Buy
    LT1221CS8#PBF Analog Devices 150MHz, 250V/µs, AV /=4 Op Amp Visit Analog Devices Buy
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    0.1 250V Price and Stock

    API Delevan PT150-1250-VM

    FIXED IND 150UH 5.7A 60 MOHM TH
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    DigiKey PT150-1250-VM Bulk
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    Sensata Circuit Breakers JLM-1-37901-250-V

    CIR BRKR MAG-HYDR LEVER
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    DigiKey JLM-1-37901-250-V Bulk
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    Bristol Electronics JLM-1-37901-250-V 6
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    Master Electronics JLM-1-37901-250-V
    • 1 $447.32
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    Sager JLM-1-37901-250-V 1
    • 1 $566.75
    • 10 $396.21
    • 100 $216.69
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    BQ Cable TLY0.12/50-VI

    Wire; TLY; stranded; Cu; 0.12mm2; PVC; violet; 150V,300V; 50m
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    TME TLY0.12/50-VI 150 50
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    0.1 250V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type 250V N-Channel Enhancement Mode MOSFET KVN4525Z SOT-89 Features Unit: mm 4.50 1.50 +0.1 -0.1 High voltage +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Fast switching speed 1 3 2 +0.1 0.53-0.1 +0.1 0.48-0.1 Low threshold +0.1 0.44-0.1 +0.1


    Original     		PDF KVN4525Z OT-89 360mA 360mA, 360mA

    KVN4424Z

    Abstract: vertical mosfet
    Text: Transistors IC SMD Type 250V N-Channel Enhancement Mode Vertical MOSFET KVN4424Z SOT-89 Features Unit: mm 4.50 1.50 +0.1 -0.1 240 Volt BVDS +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low threshold and Fast switching 2 3 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 0.40-0.1


    Original     		PDF KVN4424Z OT-89 KVN4424Z vertical mosfet

    smd transistor marking 26

    Abstract: p-channel 250V power mosfet MOSFET marking smd smd transistor 26 smd transistor 2a KVP4424Z vertical mosfet marking 24p sot-89 "marking ms" marking MS
    Text: Transistors IC SMD Type 250V P-Channel Enhancement Mode Vertical MOSFET KVP4424Z SOT-89 Features 240 Volt VDS +0.1 4.50-0.1 +0.1 1.50-0.1 typical at VGS=-3.5V +0.1 2.50-0.1 Low threshold and Fast switching 1 +0.1 4.00-0.1 +0.1 1.80-0.1 3 2 +0.1 0.53-0.1 +0.1


    Original     		PDF KVP4424Z OT-89 smd transistor marking 26 p-channel 250V power mosfet MOSFET marking smd smd transistor 26 smd transistor 2a KVP4424Z vertical mosfet marking 24p sot-89 "marking ms" marking MS

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification FMMT417 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT23 NPN Silicon Planar 1 0.55 High speed pulse generators +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		PDF FMMT417 OT-23 620pF 20MHz

    FMMT497

    Abstract: MARKING SMD npn TRANSISTOR
    Text: Transistors SMD Type High Voltage High Performance Transistor FMMT497 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 SOT23 NPN silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01


    Original     		PDF FMMT497 OT-23 100mA 250mA 100mA, 250mA, 100MHz FMMT497 MARKING SMD npn TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification FMMT597 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 SOT23 PNP silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter


    Original     		PDF FMMT597 OT-23 -50mA, -100mA, -20mA -100mA -50mA

    597 smd transistor

    Abstract: FMMT597 NA MARKING SOT23 10V-100 PNP POWER TRANSISTOR SOT23 transistor smd marking NA sot-23
    Text: Transistors SMD Type High Voltage Transistor FMMT597 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 SOT23 PNP silicon planar +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter


    Original     		PDF FMMT597 OT-23 -250V -50mA, -100mA, -20mA -100mA -50mA 597 smd transistor FMMT597 NA MARKING SOT23 10V-100 PNP POWER TRANSISTOR SOT23 transistor smd marking NA sot-23

    FMMT417

    Abstract: 417 TRANSISTOR SMD TRANSISTOR MARKING BR
    Text: Transistors SMD Type Avalanche Transistor FMMT417 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT23 NPN Silicon Planar 1 0.55 High speed pulse generators +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		PDF FMMT417 OT-23 620pF 20MHz FMMT417 417 TRANSISTOR SMD TRANSISTOR MARKING BR

    marking 415 sot23

    Abstract: FMMT415
    Text: Transistors SMD Type Avalanche Transistor FMMT415 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT23 NPN Silicon Planar 1 0.55 High speed pulse generators +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		PDF FMMT415 OT-23 620pF 20MHz marking 415 sot23 FMMT415

    FMMT415

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification FMMT415 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT23 NPN Silicon Planar 1 0.55 High speed pulse generators +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		PDF FMMT415 OT-23 620pF 20MHz FMMT415

    3N25

    Abstract: No abstract text available
    Text: MOSFET SMD Type N-Channel MOSFET KXU03N25 TO-252 • Features Unit: mm ● VDS V = 250V +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 2 1 2.3 3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1


    Original     		PDF KXU03N25 O-252 3N25

    2SC4702

    Abstract: XV SOT23
    Text: Transistors SMD Type Silicon NPN Epitaxial 2SC4702 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 VCEO = 300 V 0.4 3 High breakdown voltage 1 Cob = 1.5 pF Typ. 0.55 Small Cob 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1


    Original     		PDF 2SC4702 OT-23 2SC4702 XV SOT23

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SC4702 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 VCEO = 300 V 0.4 3 High breakdown voltage 1 Cob = 1.5 pF Typ. 0.55 Small Cob 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1


    Original     		PDF 2SC4702 OT-23

    Untitled

    Abstract: No abstract text available
    Text: MOSFET SMD Type N-Channel MOSFET KXU05N25 • Features TO-252 ● VDS V = 250V Unit: mm 2 1 2.3 3 +0.1 0.60-0.1 3.80 +0.8 0.50-0.7 +0.15 5.55-0.15 +0.1 0.80-0.1 +0.1 2.30-0.1 0.127 max +0.25 2.65-0.1 +0.15 1.50-0.15 +0.15 0.50-0.15 +0.2 9.70-0.2 +0.15 6.50-0.15


    Original     		PDF KXU05N25 O-252

    2SK2133

    Abstract: smd transistor 26
    Text: IC MOSFET SMD Type MOS Field Effect Power Transistor 2SK2133 TO-263 +0.1 1.27 -0.1 Features Low on-resistance Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.2 15.25 -0.2 0.1max +0.1 1.27-0.1 +0.2 5.28 -0.2 High avalanche capabil


    Original     		PDF 2SK2133 O-263 2SK2133 smd transistor 26

    transistor 2sC3632

    Abstract: 2SC3632 2SC3632-Z NPN Transistor 600V
    Text: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC3632-Z +0.15 6.50-0.15 +0.2 5.30-0.2 +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 0.5ìs +0.1 0.80-0.1 +0.28 1.50 -0.1


    Original     		PDF 2SC3632-Z O-252 100mA 400mA -50mA transistor 2sC3632 2SC3632 2SC3632-Z NPN Transistor 600V

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SC3632-Z +0.15 6.50-0.15 +0.2 5.30-0.2 +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 0.5ìs +0.1 0.80-0.1 +0.28 1.50 -0.1 High speed tf +0.2 9.70 -0.2


    Original     		PDF 2SC3632-Z O-252 100mA 400mA -50mA

    SMD npn TRANSISTOR 1a 200v

    Abstract: 2SC2946 MARKING SMD npn TRANSISTOR 1a SMD transistor MARKING L 1A TRANSISTOR SMD 1a 9
    Text: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC2946 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1


    Original     		PDF 2SC2946 O-252 100mA SMD npn TRANSISTOR 1a 200v 2SC2946 MARKING SMD npn TRANSISTOR 1a SMD transistor MARKING L 1A TRANSISTOR SMD 1a 9

    Untitled

    Abstract: No abstract text available
    Text: Crimp Connector MI Series 5.0mm Spacing • Connection Diagram Right-Angle Type Straight Type 23.5 4.0 for 2P 5.7 {(n 2) 5+7.5} ± 0.1 7.5 ± 0.1 5.0 ± 0.1 0.1(Spacing) (Excluding 1P) n 1.9 ± 0.1 2.5 ± 0.1 {(n 2) 5+17.8} ± 0.1 ■ Structural Diagram


    Original     		PDF 1000M SWG18 -P3001 -P3002 -P3003 -P3004 -P3005 -P3006 -P6103 -P6104

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SA1413-Z Features 6.50 +0.2 5.30-0.2 +0.15 -0.15 High Voltage: VCEO=-600V +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1


    Original     		PDF 2SA1413-Z -600V O-252 -60mA -50mA -250V

    Untitled

    Abstract: No abstract text available
    Text: MOSFET SMD Type Product specification 2SK3294 TO-263 Gate voltage rating +0.1 1.27-0.1 Features 30 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low input capacitance Ciss = 1500 pF TYP. VDS = 10 V, VGS = 0 V Avalanche capability rated


    Original     		PDF 2SK3294 O-263

    2SK3294

    Abstract: No abstract text available
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3294 TO-263 Gate voltage rating +0.1 1.27-0.1 Features 30 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low input capacitance Ciss = 1500 pF TYP. VDS = 10 V, VGS = 0 V Avalanche capability rated


    Original     		PDF 2SK3294 O-263 2SK3294

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type 250V N-Channel MOSFET KQB6N25 TO-263 5.5A, 500 V. RDS ON = 1 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge (typical 6.6nC) 5 .2 8 -0+ 0.2.2 lmproved dv/dt capability 0.1max +0.1 1.27-0.1


    Original     		PDF KQB6N25 O-263

    600V PNP

    Abstract: pnp transistor 600V Transistor SMD 028 SMD TRANSISTOR MARKING 28 transistor 2sa1413 high voltage TRANSISTOR SMD 1a 9 2SA1413-Z 2sa1413
    Text: Transistors SMD Type PNP Silicon Transistor 2SA1413-Z Features 6.50 +0.2 5.30-0.2 +0.15 -0.15 High Voltage: VCEO=-600V +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127


    Original     		PDF 2SA1413-Z -600V O-252 -60mA -50mA -250V 600V PNP pnp transistor 600V Transistor SMD 028 SMD TRANSISTOR MARKING 28 transistor 2sa1413 high voltage TRANSISTOR SMD 1a 9 2SA1413-Z 2sa1413