2FAH-C20R
Abstract: b2 diode
Text: Features • ■ ■ New Product Development Integrated Passive Device ESD Protection to IEC61000-4-2 Spec. 2FAH-C20R Series - Integrated Passive & Active Device using CSP General Information This application specific integrated passive component is designed to provide all of the necessary ESD protection
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IEC61000-4-2
2FAH-C20R
5M/CS0202
b2 diode
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Untitled
Abstract: No abstract text available
Text: Features • ■ ■ New Product Development Integrated Passive Device ESD Protection to IEC61000-4-2 Spec. 2FAH-C20R Series - Integrated Passive & Active Device using CSP General Information This application specific integrated passive component is designed to provide all of the necessary ESD protection
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IEC61000-4-2
2FAH-C20R
e/TF0206
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diode marking FAH
Abstract: DIODE FAH 45 2FAH-C20R marking FAH FAH diode 0/DIODE FAH 45
Text: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features • *R ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * New Product Development Integrated Passive Device ESD Protection to IEC61000-4-2 Spec. 2FAH-C20R Series - Integrated Passive & Active Device using CSP
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IEC61000-4-2
2FAH-C20R
5M/CS0202
diode marking FAH
DIODE FAH 45
marking FAH
FAH diode
0/DIODE FAH 45
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FAH diode
Abstract: 2FAH-C20R
Text: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features • ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * New Product Development Integrated Passive Device ESD Protection to IEC61000-4-2 Spec. 2FAH-C20R Series - Integrated Passive & Active Device using CSP
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IEC61000-4-2
2FAH-C20R
5M/CS0202
FAH diode
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F75383
Abstract: F75393 2n3906 beta 2n3906 equivalent F75384 F75393 S 2N3906 thermal transistor BY395 pnp 2N3906 beta
Text: F75393 ±1oC Temperature Sensor with ß Compensation Release Date: May, 2008 Revision: V0.16P F75393 F75393 Datasheet Revision History Version Date Page Revision History V0.10P 2007/7/23 - Preliminary Version V0.11P 2007/9/20 - Add register description V0.12P
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F75393
F75393
F75394
2N3906)
2N3906
2200pF
F75383
2n3906 beta
2n3906 equivalent
F75384
F75393 S
2N3906
thermal transistor
BY395
pnp 2N3906 beta
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4312 Fan
Abstract: pin diagram of 7447 22342 capacitor amd 2587 2N3904 EMC2102 EMC2102-DZK transistor 8331 FAN23
Text: EMC2102 RPM-Based Fan Controller with HW Thermal Shutdown PRODUCT FEATURES Datasheet General Description Features The EMC2102 is an SMBus, closed-loop, RPM-based fan controller/driver with hardware HW thermal shutdown and reset controller. The EMC2102 is
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EMC2102
EMC2102
28pin
4312 Fan
pin diagram of 7447
22342 capacitor
amd 2587
2N3904
EMC2102-DZK
transistor 8331
FAN23
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FAH diode
Abstract: K375 DIODE FAH 45
Text: OM6OL6OPB OM50F60PB Prelim inary Data Sheet OM45L120PB OM35F120PB DUAL IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES H ig h C u r r e n t . Hi gh V ol ta g e 6 0 0 V A n d 1200V. Up To 75 A m p Dual I G B T s W it h F R E D D i o d e s FEATURES • Includes Internal FRED Diode
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OM50F60PB
OM45L120PB
OM35F120PB
MIL-S-19500,
35F120HB
FAH diode
K375
DIODE FAH 45
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Irfp450
Abstract: No abstract text available
Text: [ ' - 7964142 SAM SUN G S EM IC O N D UCTOR INC D eT | 7 ^ 4 1 4 2 9 8D 0 5 2 2 4 □□□5524 3 | D T ~ 3 i -1 3 N-CHANNEL POWER MOSFETS IRFP450/451/452/453 FEATURES Low RDS on at high voltage Improved inductive ruggedness Excellent high voltage stability
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IRFP450/451/452/453
IRFP250
IRFP251
IRFP252
IRFP253
IRFP450
IRFP451
OOGS43S
Irfp450
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DT1X
Abstract: No abstract text available
Text: OMS410 OMS410A 0MS51Q 3 PHASE, LOW VOLTAGE, LOW RDS on , MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE T h r e e P ha s e . 100 Volt, 15 To 45 A m p B r i d g e With C u rre n t A n d T e m p e ra tu re S ensin g In A L o w P r o f i l e P a c k a g e FEATURES
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OMS410
OMS410A
0MS51Q
DT1X
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51001Z
Abstract: siemens VFT i314 laserdiode application
Text: SIEMENS 1300 nm Laser in Coaxial TO-Paekage STH 510Q1Z Designed for application In fiber-optic networks Laser diode with MUiu-Qüâiîîüirïi We!! structure Suitable for bit rates up îo 1 Gbiys * Ternary photodiode at rear mirror for monitoring and control of radiant power
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51001Z
51QQ2Z
Q62702-P3013
51001Z
siemens VFT
i314
laserdiode application
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NDL7001 1 310 nm FIBER OPTIC COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1 310 nm laser diode for fiber optic communications and has a strained Multiple Quantum Well stMQW structure and a built-in InGaAs monitor photo diode.
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NDL7001
NDL7001
b4S752S
b427525
b427525
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schematic powerline
Abstract: hexfets irf254 DIODE FAH 45
Text: 4Ö55M52 QGüö'ibO 2 | Preliminary Data Sheet No. PD-5.013A INTERNATIONAL R E C T IF IE R INTERNATIONAL RECTIFIER TOR HEXFET* Power Module CPY100-Series Power Half-Bridges The CPY100 series of power modules are half bridge configured HEXFETs, in a practical, heatsinkable electrically isolated S IP single in-line
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55M52
CPY100-Series
CPY100
schematic powerline
hexfets
irf254
DIODE FAH 45
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ADB13
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NDL7001 1310 nm FIBER OPTIC COMMUNICATIONS InGaAsP M OW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1310 nm laser diode for fiber optic com m unications and have a M u ltip le Quantum W e ll M Q W structure and built-in InGaAs m onitor photo diode.
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NDL7001
NDL7001
LC-2298)
ADB13
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IRF035
Abstract: IRF034
Text: HE D I 4Ô55MS2 □ 0G*i02b *1 | Data Sheet No. PD-9.585A INTERNATIONAL R ECTIFIER INTERNATIONAL RECTIFIER IO R AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRF034 IRFQ35 : N -C H A N N E L 60 Volt, 0.050 Ohm HEXFET TO-204AE TO-3 Hermetic Package
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55MS2
IRF034
IRFQ35
O-204AE
IRF034,
IRF035
5S452
IRF034
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet OM6OL6OHB OM45L120HB OM50F60HB OM35F12QHB HALF-BRIDGE IGBTS IN HERMETIC ISOLATED POWER BLO CK PACKAGES High Current, High Voltage 600V And 1200V. Up To 75 A m p IGBTs With FRED Diodes. Half-Bridge C onfiguration FEATURES • • •
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OM45L120HB
OM50F60HB
OM35F12QHB
MIL-S-19500,
03oJL
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irf740 spice model
Abstract: IRF740
Text: HE D I 4âSS452 QÛ0ÔS44 0 | Data Sheet No. PD-9.375G INTERNATIONAL RECTIFIER T INTERNATIONAL. RECTIFIER l O R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF740 IRF74Ì IRF742 N-CHANNEL IRF743 Product Summary 400 Volt, 0.55 Ohm HEXFET T0-220AB Plastic Package
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SS452
IRF740
IRF74Ã
IRF742
IRF743
T0-220AB
IRF741
C-299
irf740 spice model
IRF740
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MM74HCT241
Abstract: MM54HCT244J M74HCT24
Text: National MM54HCT240/MM74HCT240 Inverting Octal TRI-STATE Buffer MM54HCT241/MM74HCT241 Octal TRI-STATE Buffer MM54HCT244/MM74HCT244 Octal TRI-STATE Buffer General Description These TRI-STATE buffers utilize microCMOS Technology, 3.0 micron silicon gate N-weW CMOS, and are general pur
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MM54HCT240/MM74HCT240
MM54HCT241/MM74HCT241
MM54HCT244/MM74HCT244
MM54HCT/MM74HCT
150pF
74HCT
54HCT
TA----55
54HCT241/MM74HCT241/MM54HCT244/MM74HCT244
MM74HCT241
MM54HCT244J
M74HCT24
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V485
Abstract: No abstract text available
Text: S-n 0 S SYSTEMS INC IDE D I 000D7SD D I 7^35^0=1 T 'V / ^ r m m 1. V- , , , - * V * 'W ^ ^ ïï^ s S ^ » ;^ PF187-03 E l M OS AREA IMAGE SENSOR OHigh Resolution 6 3 8 4 Horizontal X 485 (Vertical) Photo Sensors Incorporated #2/3-inch Size Solid State Imaging
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000D7SD
PF187-03
SEA7100H
0D007SB
SED3181F3A)
V485
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IRF720
Abstract: 1RF721 IRF723 t11g IRF721 IRF722
Text: 01 3875081 G E SOLID STATE D E ^ 3fl7SGûl ' 0 1E 18364 D D i a3bM 3 ~ T D\ T-39-11 Standard Power M O SFET s IRF720, IRF721, IRF722, IRF723 File Number 1579 Power MOS Field-Effect Transistors
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T-39-11
IRF720,
IRF721,
IRF722,
IRF723
50V-400V
IRF722
IRF720
1RF721
IRF723
t11g
IRF721
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.889 INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM915Q P-CHANNEL RAD HARD Product Summary -100 Volt, 0.12012, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and
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IRHM915Q
1x105
1x105
1x1012
MIL-STD-750,
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Untitled
Abstract: No abstract text available
Text: FU JIT SU PROGRAMMABLE SCHOTTKY 32768-B IT READ ONLY MEMORY SCHOTTKY 32768-BIT DEAP PROM 4096 WORDS x 8 BITS M B7142E/H N ovem ber 1988 Edition 4 .0 The Fujitsu MB7142 Is high spee d s c h o ttk y T T L e lectrica lly field p rogram m ab le read only m e m o ry organized as 4096 w o rds by 8 bits. W ith th re e s ta te o u tp u ts , m em o ry
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32768-B
32768-BIT
B7142E/H
MB7142
MB7142E/H
24-pin
24-LEAD
FPT-24C-A01)
28-pad
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78A093A
Abstract: MT88
Text: H A R R CD22M3493 IS S E M I C O N D U C T O R 1 2 x 8 x 1 BiMOS-E Crosspoint Switch January 1997 Description Features 96 Analog Switches Low Ron Guaranteed Rqn Matching Analog Signal Input Voltage Equal to the Supply Voltage Wide Operating Voltage. 4V to 16V
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CD22M3493
CD22M3493
CD22M
78A093A
MT88
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Untitled
Abstract: No abstract text available
Text: Bulletin 127107 rev. A 09/97 International Iö R Rectifier T.HFL SERIES T-Modules FAST RECOVERY DIODES Features • 40 A 70 A 85 A Fast recovery tim e characteristics ■ Electrically isolated base plate ■ 3 5 0 0 VRMS isolating voltage ■ Standard J E D E C package
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003G030
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MAX826
Abstract: X626
Text: 190863: Rev 1; 8/96 A lilX IA I The m x m rm are dual m onolithic power M OSFET drivers designed to translate T T L inputs to high voltage/curw rt o ito u ts. The MAX626 Is a dual Inverting power M O ^ TT driver. The MAX627 is a dual non-lnvertkifl power M OSFET driver, « id the MAX628
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T8C428/7/8
MAX626
MAX627
MAX628
MAX826
X626
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