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    .WY TRANSISTOR Search Results

    .WY TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    .WY TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: STWD100 Watchdog timer circuit Datasheet - production data Applications • Telecommunications  Alarm systems  Industrial equipment  Networking SOT23-5 WY  Medical equipment SC70-5, SOT323-5 (W8)  UPS (uninterruptible power supply) Features


    Original     		PDF STWD100 OT23-5 SC70-5, OT323-5 OT23-5, SC70-5 OT323-5) STWD100NWWY3F OT23-5L DocID014134

    WY transistor

    Abstract: sot23 WY transistor marking WY .wy transistor WG SOT 23 KTC3876 marking wo sot-23 TRANSISTOR MARKING CODE WO MARKING WY transistor wy
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Complementary To KTA1505. z Excellent HFE Linearity. z Low noise. KTC3876 Pb Lead-free APPLICATIONS z General purpose application, switching application. SOT-23


    Original     		PDF KTC3876 KTA1505. OT-23 BL/SSSTC057 WY transistor sot23 WY transistor marking WY .wy transistor WG SOT 23 KTC3876 marking wo sot-23 TRANSISTOR MARKING CODE WO MARKING WY transistor wy

    Omron H5BR

    Abstract: tranzystor BD 283 omron h5br-b H5BR-B H5BR
    Text: Wielofunkcyjny cyfrowy przekaŸnik czasowy H5BR £atwy w obs³udze cyfrowy przekaŸnik czasowy z funkcj¹ zliczania czasu w obudowie DIN 72 x 72 mm • 9 ró¿nych trybów pracy ■ Nastawa wszystkich parametrów w menu na panelu czo³owym. ■ Zakresy czasowe od 0.001 sek do 9999 h.


    Original     		PDF

    H7CR-B-500

    Abstract: P3GA-08 H5CR-B H7CR-B H5CR-S pods H5CR P2CF-08 Y92A-48 Y92A-48F1
    Text: H5CR Cyfrowy przekaŸnik czasowy Wielofunkcyjny przekaŸnik czasowy 1/16 DIN z funkcjami ³atwymi w u¿yciu Dziewiêæ trybów pracy wyjœæ umo¿liwia zastosowanie w ró¿nych aplikacjach Wszystkie parametry ustawiane w menu na panelu czo³owym Zakresy czasowe od 0.001 s do 9999 godzin


    Original     		PDF

    C200H-AD003

    Abstract: omron e5as c200h id212 C200H-LK202-V1 c200h-lk201-V1 OMRON SYSMAC C200H-LK202-V1 c200h-lk202 C200H-OD211 C200H-PRM21 C200H-ID217
    Text: SPIS TREŒCI DANE TECHNICZNE Podstawowe dane techniczne………………………………………………………………………………………………………….…………. Charakterystyki techniczne…………………………………………………………………………………….………………………………….


    Original     		PDF XW2B-20Gj XW2B-40Gj C200H-ID215 C200H-MD115 C200H-MD215 C200H-MD501 C200H-ID501 C200H-ID216 C200H-ID217 C200H-AD003 omron e5as c200h id212 C200H-LK202-V1 c200h-lk201-V1 OMRON SYSMAC C200H-LK202-V1 c200h-lk202 C200H-OD211 C200H-PRM21 C200H-ID217

    wy smd

    Abstract: 2sc4118 MARKING WY
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4118 Features Excellent hFE linearity : hFE 2 = 25 (min) (VCE = 6 V, IC = 400 mA) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 35 V


    Original     		PDF 2SC4118 wy smd 2sc4118 MARKING WY

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3876 TRANSISTOR NPN FEATURES • High hFE: hFE=70-400 · Complementary to KTA1505 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 KTC3876 KTA1505 100mA 400mA 100mA,

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 KTC4076 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES Power dissipation PCM: 3. COLLECTOR 1. 01 REF 1. 25¡ À0. 05 100 mW (Tamb=25℃) 0. 30 1. 30¡ À0. 03


    Original     		PDF OT-323 OT-323 KTC4076 100mA 400mA 100mA,

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 KTC4076 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES Power dissipation 3. COLLECTOR 1.01 REF 1.25±0.05 PCM: 100 mW (Tamb=25℃) 0.30 1.30±0.03 Collector current


    Original     		PDF OT-323 OT-323 KTC4076 100mA 400mA 100mA,

    transistor marking WY

    Abstract: KTC4076 WY transistor
    Text: KTC4076 KTC4076 SOT-323 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES Power dissipation PCM: 3. COLLECTOR 1. 01 REF 1. 25¡ À0. 05 100 mW (Tamb=25℃) 0. 30 1. 30¡ À0. 03 Collector current ICM: 500 mA Collector-base voltage 35 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF KTC4076 OT-323 100mitter-base 100mA 400mA 100mA, transistor marking WY KTC4076 WY transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTA1666 TRANSISTOR PNP 1. BASE FEATURES z Complementary to KTC4379 z Small Flat Package z Low Saturation Voltage z Power Amplifier and Switching Application


    Original     		PDF OT-89-3L OT-89-3L KTA1666 KTC4379 -500mA -50mA 300mS,

    WY transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors KTA1666 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current -2 A ICM: Collector-base voltage


    Original     		PDF OT-89 KTA1666 OT-89 -10mA, -500mA -50mA WY transistor

    MARKING WY SOT-89

    Abstract: WY transistor WY sot-89 transistor marking WY KTA1666 marking wy
    Text: KTA1666 KTA1666 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current ICM: -2 A Collector-base voltage -50 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF KTA1666 OT-89 -10mA, -500mA -50mA MARKING WY SOT-89 WY transistor WY sot-89 transistor marking WY KTA1666 marking wy

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors KTC4076 TRANSISTOR NPN FEATURES SOT–323  Excellent hFE Linearity  Complementary to KTA2015 APPLICATIONS  General Purpose Switching 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-323 KTC4076 KTA2015 100mA 400mA 100mA, 25Min 40Min

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3876 TRANSISTOR NPN FEATURES • High hFE · Complementary to KTA1505 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol


    Original     		PDF OT-23 OT-23 KTC3876 KTA1505 100mA 400mA 100mA,

    Untitled

    Abstract: No abstract text available
    Text: KTC3876 Plastic-Encapsulate Transistors NPN Silicon COLLECTOR 3 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCEO VCBO VEBO IC Value 30 35


    Original     		PDF KTC3876 OT-23 100mAdc) 20mAdc, 30-Jul-2012 OT-23

    WY smd transistor

    Abstract: smd transistor marking wy
    Text: Transistors IC SMD Type Epitaxial Planar PNP Transistor KTA1666 SOT-89 • Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 ● Collector Power dissipation: PC=500mW +0.1 2.50-0.1 ● Collector Current -Continuous: IC=-2A 3 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 -0.1


    Original     		PDF KTA1666 OT-89 500mW WY smd transistor smd transistor marking wy

    WY transistor

    Abstract: ktc3876 transistor marking WY sot23 WY .wy transistor
    Text: KTC3876 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — High hFE: hFE=70-400 Complementary to KTA1505 — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage


    Original     		PDF KTC3876 OT-23 OT-23 KTA1505 100mA 400mA 100mA, WY transistor ktc3876 transistor marking WY sot23 WY .wy transistor

    marking wg

    Abstract: WY smd hFE CLASSIFICATION Marking smd wg hFE CLASSIFICATION Marking CE 2SC2859 Marking WO smd sot23 marking wy
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC2859 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 Excellent hFE linearity : hFE 2 = 25 (min) (VCE = 6 V, IC = 400 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


    Original     		PDF 2SC2859 OT-23 100mA 400mA marking wg WY smd hFE CLASSIFICATION Marking smd wg hFE CLASSIFICATION Marking CE 2SC2859 Marking WO smd sot23 marking wy

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC2859 TRANSISTOR NPN SOT–23 FEATURES  Excellent hFE Linearity  Switching Applications 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 2SC2859 100mA 400mA 100mA, 25Min 40Min 70Min

    Untitled

    Abstract: No abstract text available
    Text: BCR139. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22 kΩ BCR139F/L3 BCR139T C 3 R1 1 B 2 E EHA07264 Type Marking Pin Configuration Package BCR139F WYs 1=B 2=E 3=C -


    Original     		PDF BCR139. BCR139F/L3 BCR139T EHA07264 BCR139F BCR139L3 dissipationBCR139F, BCR139L3, BCR139T,

    vp1210n5

    Abstract: No abstract text available
    Text: VP12A fài Super te x inc. /p v P-Channel Enhancement-Mode Wy Vertical DMOS FETs Ordering Information Standard Commercial Devices I d ON (max) (min) TO-39 BVdgs t Order Number / Package ^ D S (O N ) DICEt -40V 0 .8 0 -6A VP1204N2 VP1204N5 VP1204ND -60V 0 .8 0


    OCR Scan     		PDF VP12A VP1204N2 VP1206N2 VP1210N2 -100V O-220 VP1204N5 VP1206N5 VP1210N5 VP1204ND vp1210n5

    C3656

    Abstract: C4397 transistor c3399 a1678 transistor C4047 A1526 2sc3916 2SA1573 C3396 a1343
    Text: S A if V O Resistance-Contained Transistor Series F eatu re s App l i e ; a t i o n s ☆ Swi tch ing circuit. ☆ Inverter circuit. ☆ Interi ace circuit. ☆ Driver circuit. oto I C-* lOOmA S e r i e s Ta*25"C ( ): Ma rk ing on MCP, CP. For PNP Type No


    OCR Scan     		PDF 2SA1676 /2SC4396 2SA1677 /2SC4397 2SA1678 /2SC4398 2SA1722 /2SC4498 2SA1341 2SA1508 C3656 C4397 transistor c3399 a1678 transistor C4047 A1526 2sc3916 2SA1573 C3396 a1343

    TRANSISTORS

    Abstract: 2SA POWER TRANSISTORS DIGITAL TRANSISTORS
    Text: Introduction Introduction This data book provides data sheets for all leaded transistors that are manufactured by R O H M Co.,Ltd. All transistors are manufactured with R O H M ’s unique technology that provides a class of devices that are highly reliable. They are extremely compact to allow for high density mounting


    OCR Scan     		PDF