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    .35 MICRON GATE ARRAY Search Results

    .35 MICRON GATE ARRAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    .35 MICRON GATE ARRAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    low power and area efficient carry select adder v

    Abstract: IMPLEMENTATION of 4-BIT LEFT SHIFT BARREL SHIFTER 16 bit carry select adder 32 bit carry select adder 8 bit carry select adder full subtractor implementation using NOR gate 32 bit ripple carry adder carry select adder full subtractor circuit using nor gates BCD adder use rom
    Text: MVA60000 MVA60000 Series 1.4 Micron CMOS MEGACELL ASICs DS5499 ISSUE 3.1 March 1991 GENERAL DESCRIPTION Very large scale integrated circuits, requiring large RAM and ROM blocks, often do not suit even high complexity gate arrays, such as Zarlink Semiconductors' CLA60000 series.


    Original     		PDF MVA60000 MVA60000 DS5499 CLA60000 low power and area efficient carry select adder v IMPLEMENTATION of 4-BIT LEFT SHIFT BARREL SHIFTER 16 bit carry select adder 32 bit carry select adder 8 bit carry select adder full subtractor implementation using NOR gate 32 bit ripple carry adder carry select adder full subtractor circuit using nor gates BCD adder use rom

    9C0000

    Abstract: No abstract text available
    Text: 128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory PCM Features • Security – One-time programmable registers 64 unique factory device identifier bits 2112 user-programmable OTP bits – Selectable OTP space in main array – Three adjacent main blocks available for boot code


    Original     		PDF 128Mb: 115ns 135ns 128KB 09005aef8447d46d/Source: 09005aef845b5c96 9C0000

    Untitled

    Abstract: No abstract text available
    Text: 128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory PCM Features • Security – One-time programmable registers 64 unique factory device identifier bits 2112 user-programmable OTP bits – Selectable OTP space in main array – Three adjacent main blocks available for boot code


    Original     		PDF 128Mb: 115ns 135ns 128KB blocks-0006, 09005aef8447d46d/Source: 09005aef845b5c96

    9C0000

    Abstract: No abstract text available
    Text: 128Mb: P8P Parallel PCM Features P8P Parallel Phase Change Memory PCM Features • Security – One-time programmable registers 64 unique factory device identifier bits 2112 user-programmable OTP bits – Selectable OTP space in main array – Three adjacent main blocks available for boot code


    Original     		PDF 128Mb: 115ns 135ns 128KB 09005aef8447d46d/Source: 09005aef845b5c96 9C0000

    TC140G44

    Abstract: TC140G27 toshiba tc140g
    Text: TOSHIBA TO SH IB A A M E R IC A ELECTRO NIC C O M P O N E N T S , INC. 1.0 micron TC140G CMOS Gate Array Description Features The TC140G series of 1.0 micron gate arrays has a 0.4ns gate speed and up to 172K raw gates. — Provides a 35% reduction in delay times compared to


    OCR Scan     		PDF TC140G MAS-0097/3-90 TC140G44 TC140G27 toshiba tc140g

    nec d 588

    Abstract: nec naming rule nec product naming rule NEC CMOS-4
    Text: CMOS-9 3.3-VO LT, 0 .35-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. Preliminary March 1995 Description Figure 1. CMOS-9 Package Examples; BGA and QFP NEC's CMOS-9 gate array family provides designers with the performance capabilities and features required


    OCR Scan     		PDF 35-MICRON 66MHz nec d 588 nec naming rule nec product naming rule NEC CMOS-4

    Untitled

    Abstract: No abstract text available
    Text: Preliminary IIIÌMÌIII AffHSl September 1989 OPEN ASIC DATASHEET MAF GATE ARRAY SERIES 1.2 MICRON CMOS FEATURES . . . . . . HIGH LOAD DRIVE CAPABILITY EXCEEDING 35 mA • GATE COUNTS : 250 AND 800 . WIDE PACKAGE RANGE . EXCELLENT FOR FUSE PROGRAMMABLE ARRAYS AND BIPOLAR LOGIC REPLACE­


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA ASIC TO S H IB A A M E R IC A ELECTRO NIC C O M P O N E N T S , INC. CMOS ASIC 1C120G SERESGITE /«RAY Toshiba Corporation has introduced a series of gate arrays that use a 1.0-micron CMOS process to reduce gate delays by 35%. Applications include consolidating high-speed circuits into a single package, especially in highperformance systems.


    OCR Scan     		PDF 1C120G TC120G MA01803 MAS-0053/6-89

    toshiba tc110g

    Abstract: CMOS GATE ARRAYs toshiba TC110G toshiba toggle nand 74HC inverter tri-state output TOSHIBA Gate array macro cell 110G TC120G38 TC120G75 TC120GA0
    Text: ASIC TOSH IBA TO S H IB A A M E R IC A ELECTRONIC C O M P O N E N T S , INC. CMOS ASIC TC120G SKES GOTE-4RRAY Toshiba Corporation has introduced a series of gate arrays that use a 1.0-micron CMOS process to reduce gate delays by 35%. Applications include consolidating high-speed circuits into a single package, especially in high­


    OCR Scan     		PDF 1C120G TC120G Suite205 CA92680 MA01803 5555Triangle MAS-0053/6-89 toshiba tc110g CMOS GATE ARRAYs toshiba TC110G toshiba toggle nand 74HC inverter tri-state output TOSHIBA Gate array macro cell 110G TC120G38 TC120G75 TC120GA0

    T157WG

    Abstract: S-MOS navnet A138G2 t177 4-bit full adder using nand gates and 3*8 decoder 6 input or gate SLA1024 T161RE
    Text: S-M 0 S S Y S T E M S INC 5bE J> m 7 ci3 Z eÏQ'l GG01522 fc.35 H S I 1 0 SLA1 OOOO Series HIGH SPEED CMOS GATE ARRAYS • DESCRIPTION The S-MOS SLA10000 series is a channel-less gate array manufactured on S-MOS’ state-of-the-art 0.8 micron double-metal SiCMOS process. The series consists of 11 arrays ranging from 9,000 to 101,800 usable gates and


    OCR Scan     		PDF GG01522 SLA10000 SSC5000 B8259 B8237 B82284 B8255 T157WG S-MOS navnet A138G2 t177 4-bit full adder using nand gates and 3*8 decoder 6 input or gate SLA1024 T161RE

    DIGITAL GATE EMULATOR USING 8085

    Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent
    Text: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S


    OCR Scan     		PDF AMI6G16S AMI6G33S AMI6G41S AMI6G70S AMI6G106S AMI6G150S AMI6G202S AMI6G333 AMI6G471 AMI6G603 DIGITAL GATE EMULATOR USING 8085 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent

    TSGB01

    Abstract: TSFL12 TSFL06 Thomson Linear Integrated Circuits TSGB 54080
    Text: ASIC PRODUCTS THOMSON MIL ET SPATIAUX TMS offers a wide range of ASIC's products, BIPOLAR, MOS, LINEAR, DIGITAL GATE ARRAYS, STANDARD CELLS, FULL CUSTOM. All ASIC’s products are available with the following screening / quality classes: - Military temperature ra n g e ;


    OCR Scan     		PDF 00DDD3B 30x30 TSGB01 TSFL12 TSFL06 Thomson Linear Integrated Circuits TSGB 54080

    Thomson ceramic capacitor

    Abstract: TSFL06 K 3264 CERAMIC LCCC 68 TSFL TSBC LAYER .35 micron gate array TSFL12 TSGC
    Text: THOMSON MIL ET SPATIAUX SSE 1> • S02bfl7S DDDÜSÜ7 ^23 ■ THCM T^Hà- ASIC PRODUCTS TMS offers a wide range of ASIC's products : bipolar, MOS, BICMOS, linear, digital, gate arrays, standard cells, full custom. All — — — ASIC's products are available with the following screening levels :


    OCR Scan     		PDF 00D0SQ7 Thomson ceramic capacitor TSFL06 K 3264 CERAMIC LCCC 68 TSFL TSBC LAYER .35 micron gate array TSFL12 TSGC

    6 input or gate

    Abstract: t177 SLA847 986 t04 B8237 B8250 Series A138G2 19275 resistor ssc300 S-MOS asic
    Text: S-H 0 S SYSTEMS INC SbE » • 7ei3StiOti ÜDDlM'ia 076 «SIIO SLA8000 HIGH SPEED CMOS GATE ARRAY ■ DESCRIPTION The SLA8000 Series consists of a group of 13 high speed, sea-of-gates CMOS gate arrays. The series is fabricated utilizing our state-of-the-art 1.2 micron silicon gate technology. Gate counts range from 5K to 80K


    OCR Scan     		PDF SLA8000 SLA8000 SLA827S SLA837S SLA847S SLA860S SLA872S SLA890S SLA86ES 6 input or gate t177 SLA847 986 t04 B8237 B8250 Series A138G2 19275 resistor ssc300 S-MOS asic

    Untitled

    Abstract: No abstract text available
    Text: SYSTEMS SLA8000 Series June 1988 VERY HIGH SPEED CHANNELLESS CMOS GATE ARRAYS D escription The SLA8000 Series consists of a group of seven very high-speed, sea-of-gates CMOS gate arrays. The series is fabricated utilizing our state-of-the-art 1.2 micron sili­


    OCR Scan     		PDF SLA8000 SLA827S

    tc140g

    Abstract: TC140G37 TC140G27 TC140G54 TC140G44 TC140G12 TC140G68 toshiba tc140g27 TC140G09 TC140G18
    Text: *1A’ li ' 'S/Si _ TOSHIBA 1t TOSHIBA AMERICA ELECTRONIC COMPOMEWTS, IIMC 1.0 micron TC140G CMOS Gate Array Features Description • Process: 1.0 micron drawn HC2MOS Si-gate double layer metal Raw gates: 2K to 172K Usable gates: up to 68K Gate speed: 0.4ns 2-input NAND gate, fanout - 2, tpd.


    OCR Scan     		PDF TC140G 167th MAS-0097/3-92 TC140G37 TC140G27 TC140G54 TC140G44 TC140G12 TC140G68 toshiba tc140g27 TC140G09 TC140G18

    S-MOS navnet

    Abstract: S-MOS asic B16c F1841
    Text: DEC 2 3 i32S _ S-MOS S Y S T E M S • ■ ASIC _ A Seiko Epson Affiliate SLA9000 OCTOBER 1990 HIGH SPEED CMOS GATE ARRAYS DESCRIPTION The S-MOS SLA9000 series is a family of sea-of-gates • 1.0 micron drawn channel length N-Channel


    OCR Scan     		PDF SLA9000 SLA9000 S-MOS navnet S-MOS asic B16c F1841

    pMOS NAND GATE

    Abstract: A540B ISO-5
    Text: UNIVERSAL SEMICONDUCTORS HE D ] “=131,0341 ODGQG4S 3 | T - «¿3.- //- 0 e] High Reliability Fast CMOS Gate Arrays UNIVERSAL SGMICONDUCTOR INC. FEATURES: • • • • • • • • •


    OCR Scan     		PDF 13ba311 000D0M5 410x410 390x390 pMOS NAND GATE A540B ISO-5

    B8228

    Abstract: No abstract text available
    Text: kfoEC S 6 Í?9C S-MOS S Y T E M ASIC S Preliminary A Seiko Epson Affiliate SLA10000 AUGUST 1990 HIGH SPEED CMOS GATE ARRAYS DESCRIPTION FEATURES The S-MOS SLA10000 series is a channeMess gate • .76 micron drawn channel length N-Channel array manufactured on S-MOS’ state-of-the-art 0.8


    OCR Scan     		PDF SLA10000 SLA10000 B8228

    Untitled

    Abstract: No abstract text available
    Text: , . , Universal Semiconduc tot HIGH RELIABILITY FAST CMOS GATE arrays FEATURES : ISO-2/ISO-3/ISO-5 GATE ARRAY DESCRIPTION . The ISO 2 /3 /5 series o f silicon gate CMOS arrays are high perform ance fam ilies o f eleven arrays each w ifh co m p le xity ranging from 100 to 2 4 0 0 equivalent gates and a m axim um


    OCR Scan     		PDF 410x410

    TC170G35

    Abstract: No abstract text available
    Text: TOSHIBA TC170G CMOS Gate Array 0.7fim, 5.0V ASICs The 0.7 |im, 5V TC170G allows higher system perfor­ mance and device integration with lower power than previous generation 5V gate array families Benefits • Advanced 0.7 micron CMOS process with fast 260ps gate


    OCR Scan     		PDF TC170G 260ps TC160G T0T7247 IS09000. TC170G35

    TTL 7466

    Abstract: B8530 SLA909P SLA9000PIUS S-MOS navnet 936p T374H A161H F144-8 octal p-channel ARRAY
    Text: S-Î1 0 S SYSTEMS INC SbE D • OQOlSlb 331 « S Î I O SLA9000PIUS Series CMOS HIGH SPEED GATE ARRAYS ■ DESCRIPTION The S-MOS SLA9000Plus series is a family of sea-of-gate arrays manufactured on S-MOS’ state-of-the-art 1.0 micron double-metal SiCMOS process. This series has been designed for high I/O, medium gate count designs


    OCR Scan     		PDF SLA9000PIUS SLA9000Plus F240-16 TTL 7466 B8530 SLA909P SLA9000PIUS S-MOS navnet 936p T374H A161H F144-8 octal p-channel ARRAY

    HA 1370 schematics

    Abstract: CMOS XNOR XOR NAND2 NAND3 ic ttl and not xor nor xnor or MICRON POWER RESISTOR 2W ECL IC NAND
    Text: PRELIMINARY Semiconductor December 1990 NGM Series ABiC BiCMOS/ECL Gate Arrays General Description Features The NGM Series is a new family of mixed ECL and BiCMOS gale arrays based on National’s revolutionary 0.8 micron drawn ABiC BiCMOS process. The NGM Series is the first


    OCR Scan     		PDF TL/U/10861-4 HA 1370 schematics CMOS XNOR XOR NAND2 NAND3 ic ttl and not xor nor xnor or MICRON POWER RESISTOR 2W ECL IC NAND

    TC170G35

    Abstract: TC170G TAB 173 AP TC170G45 Edison time delay CMOS GATE ARRAYs toshiba XBRL16
    Text: TOSHIBA TC170G CMOS Gate Array 0.7\xm, 5.0V ASICs The 0.7 urn, 5VTC170G allows higher system perfor­ mance and device integration with lower power than previous generation 5V gate array families Benefits • Advanced 0.7 micron CMOS process with fast 260ps gate


    OCR Scan     		PDF TC170G 5VTC170G 260ps TC160G TC170G35 TAB 173 AP TC170G45 Edison time delay CMOS GATE ARRAYs toshiba XBRL16