10MFD
Abstract: M142 SD1398 SD1423 SD1424 CK-05
Text: SD1398 RF & MICROWAVE TRANSISTORS 850-960 MHz APPLICATIONS . . . 850 - 960 MHZ 24 VOLTS COMMON EMITTER OVERLAY GEOMETRY GOLD METALLIZATION POUT = 6.0 W MIN. WITH 10.0 dB GAIN .230 6LFL M142 epoxy sealed ORDER CODE SD1398 BRANDING SD1398 PIN CONNECTION
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SD1398
SD1398
SD1423
SD1424.
10MFD
M142
SD1424
CK-05
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IN5661
Abstract: 10MFD M142 SD1398 SD1423 SD1424 CK-05
Text: SD1398 RF & MICROWAVE TRANSISTORS 850-960 MHz APPLICATIONS . . . 850 - 960 MHZ 24 VOLTS COMMON EMITTER OVERLAY GEOMETRY GOLD METALLIZATION P OUT = 6.0 W MIN. WITH 10.0 dB GAIN .230 6LFL M142 epoxy sealed ORDER CODE SD1398 BRANDING SD1398 PIN CONNECTION
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SD1398
SD1398
SD1423
SD1424.
IN5661
10MFD
M142
SD1424
CK-05
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CK06BX104K
Abstract: M118 SD1423 SD1424 trasistors
Text: SD1423 RF & MICROWAVE TRANSISTORS 800-960MHz BASE STATION APPLICATIONS . . . . 800 - 960 MHz 24 VOLTS EFFICIENCY 50% COMMON EMITTER GOLD METALLIZATION CLASS AB LINEAR OPERATION POUT = 15 W MIN. WITH 8.0 dB GAIN .230 6LFL M118 epoxy sealed ORDER CODE SD1423
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SD1423
800-960MHz
SD1423
SD1424.
CK06BX104K
M118
SD1424
trasistors
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capacitor 22PF
Abstract: capacitor 330pF microstrip line M142 SD1391 120142 210PF
Text: SD1391 RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS . . . PRELIMINARY DATA 470 MHZ 24 VOLTS EFFICIENCY 50% MIN. POUT = 15 W WITH 11.0 dB MIN. GAIN CLASS AB COMMON EMITTER .230 x .360 6LFL M142 BRANDING SD1391 ORDER CODE SD1391 PIN CONNECTION
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SD1391
SD1391
capacitor 22PF
capacitor 330pF
microstrip line
M142
120142
210PF
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M142
Abstract: SD1414 VARIABLE capacitor .5PF Electrolytic capacitor
Text: SD1414 RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS . . 836 MHz 12.5 VOLTS COMMON BASE POUT = 45 W MIN. WITH 4.7 dB GAIN .230 6LFL M142 epoxy sealed ORDER CODE SD1414 BRANDING SD1414 PIN CONNECTION DESCRIPTION The SD1414 is a 12.5 V Class C epitaxial silicon
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SD1414
SD1414
M142
VARIABLE capacitor
.5PF Electrolytic capacitor
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variable capacitor
Abstract: M142 SD1414 3M-K-6098-11
Text: SD1414 RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS . . 836 MHz 12.5 VOLTS COMMON BASE P OUT = 45 W MIN. WITH 4.7 dB GAIN .230 6LFL M142 epoxy sealed ORDER CODE SD1414 BRANDING SD1414 PIN CONNECTION DESCRIPTION The SD1414 is a 12.5 V Class C epitaxial silicon
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SD1414
SD1414
variable capacitor
M142
3M-K-6098-11
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sd1458
Abstract: M111 sgs-thomson RF TRANSISTORS
Text: SD1458 RF & MICROWAVE TRANSISTORS TV\LINEAR APPLICATIONS . . . . . 170 - 230 MHz 28 VOLTS IMD −55 dB COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING HIGH SATURATED POWER CAPABILITY DESIGNED FOR HIGH POWER LINEAR OPERATION POUT = 14 W MIN. WITH 14.0 dB GAIN
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SD1458
SD1458
M111
sgs-thomson RF TRANSISTORS
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14 IC
Abstract: circuit sd1458 sd1458 M111 no120111 sgs-thomson *1458
Text: SD1458 RF & MICROWAVE TRANSISTORS TV\LINEAR APPLICATIONS . . . . . 170 - 230 MHz 28 VOLTS IMD −55 dB COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING HIGH SATURATED POWER CAPABILITY DESIGNED FOR HIGH POWER LINEAR OPERATION P OUT = 14 W MIN. WITH 14.0 dB GAIN
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SD1458
SD1458
14 IC
circuit sd1458
M111
no120111
sgs-thomson *1458
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variable capacitor
Abstract: M142 SD1414 3M-K-6098 3M-K-6098-11
Text: SD1414 RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS . . 836 MHz 12.5 VOLTS COMMON BASE POUT = 45 W MIN. WITH 4.7 dB GAIN .230 6LFL M142 epoxy sealed ) s t( ORDER CODE SD1414 BRANDING SD1414 c u d PIN CONNECTION DESCRIPTION o s b O - The SD1414 is a 12.5 V Class C epitaxial silicon
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SD1414
SD1414
variable capacitor
M142
3M-K-6098
3M-K-6098-11
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M104
Abstract: M135 XO-72 SD1072
Text: SELECTION GUIDE TO 39 M l 34} 3jp ¥ 500 6LFL ( M iti 380 4LFL (M l 13* 381) 4L STUD (M135) m u TO 60 (M137J 380 NARROW 4L STUD (M104) .280 /1LSL (M123> st (M l 07) 130 . 230 MHz CLASS FOR FM MOBILE APPLICATIONS Type Config. VCC (V) .280 4LSL XO-72 SL
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IM113|
IMI23)
XO-72
T0-60
M104
M135
SD1072
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Untitled
Abstract: No abstract text available
Text: r=7 SGS-THOMSON SD1391 RF & MICROWAVE TRANSISTORS UHF BASE STATION A P P LICATIONS PRELIMINARY DATA 470 MHZ 2 4 VO LTS E FFIC IEN C Y 50% MIN. P out = 15 W W ITH 11.0 dB MIN. GAIN CLASS AB CO M M ON EM ITTER .230 x .360 6LFL M 142 ORD ER CODE SD1391 BRA N DIN G
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SD1391
SD1391
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6lfl
Abstract: sd 1144 2N6080 7-02N sd1410 2N5643
Text: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS GiflO Ml(LgmM § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022 VCC (V
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XO-72
O-117SL
O-117SL
2N6080
6lfl
sd 1144
7-02N
sd1410
2N5643
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2n6080
Abstract: SD 1062 transistor 2N3924 sd 3632
Text: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS GiflO Ml(LgmM § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022 VCC (V
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XO-72
O-117SL
O-117SL
2N6080
T0-60
SD 1062 transistor
2N3924
sd 3632
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BFR38
Abstract: BFR99 2N6080 2N956 BFX89 BSX33 9552N TO-117SL XO-72 pnp 2222a
Text: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS G iflO M l(L g m M § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022
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XO-72
O-117SL
O-117SL
2N6080
BSX33
2N956
BFR38
BFR99
BFX89
9552N
TO-117SL
pnp 2222a
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SD1730
Abstract: TH430 M153 "class AB Linear" hf 801733 SD1726 SD1728 M113 M164 SD1224-10
Text: SILICON POWER TRANSISTORS Characterized for broadband amplifier operation, SGS-THOMSON 2-30 MHz devices provide high linear power output for a variety of military, commercial and am ateur communication equipment. .400 x .425 6LFL M153 .380 4LFL (M113) .550 Dia .500 4L STUD
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SD1285*
SD1405*
SD1487
SD1224-10*
SD1407*
SD1729
SD1730
TH430
M153
"class AB Linear" hf
801733
SD1726
SD1728
M113
M164
SD1224-10
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SD1446
Abstract: SD140 an power 88-108 mhz M111 SD1224-10 M113 M164 SD1285 SD1405 SD1407
Text: S IL IC O N P O W E R T R A N S IS T O R S Characterized for broadband amplifier operation, SGS-THOMSON 2-30 MHz devices provide high linear power output for a variety of military, commercial and am ateur com munication equipment. .400 x .425 6LFL M153 .380 4LFL
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SD1285*
SD1405*
SD1487
SD1224-10*
SD1407*
SD1729
SD1457
SD1460
SD1483
SD1013
SD1446
SD140
an power 88-108 mhz
M111
SD1224-10
M113
M164
SD1285
SD1405
SD1407
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6lfl
Abstract: SD 1496 transistor sd1145 1135 sd 1144 XO 18 .230 6lfl TO-117SL
Text: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M3 ©[I[LIl g'ir®@R!lö(gi RF & MICROWAVE TRANSISTORS TO-39 TO-11TSL .280 4L SL (B XO-72 SL 450 . 512 MHz Package Type Config. CLASS C FOR MOBILE APPLICATIONS VCc (V) Pqut mm (W) SD 1132-4 SD 1115-2 SD 1482
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O-11TSL
XO-72
O-117SL
6lfl
SD 1496 transistor
sd1145
1135
sd 1144
XO 18
.230 6lfl
TO-117SL
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TRF559
Abstract: XO 18 XO-72 11324 CE125
Text: 450. 5 1 2 M H z C L A S S C FOR M O BILE A P P L IC A T IO N S P « rt m in W *o Pin Gp m in (V) (M H z) (WJ (dB) 7,5 7,5 7,5 0,25 0,8§ 3 470 470 470 0,02 0,2 0,475 11 6 8 V cc PACKAGE TYPE C O N F IG . T O -46 (CB-401 ) SD 1132-4 SD 1115-2 SD 1482 XO-72 SL
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XO-72
CB-401
CB-71
CB-438)
CB-3011
ICB-3121
TRF559
XO 18
11324
CE125
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2N3632
Abstract: 2N44 THB94 sd1273 2N5590 Thomson 1134-5 CE125
Text: 130. 2 3 0 M Hz C L A S S C FOR FM MOBILIE A P P L IC A T IO N S V cc PACKAGE TYPf C O N F IG . V ^out m in (W) fo Pin (M H z) (W) Gp m in (dB) 150 175 175 175 150 0,1 0,1 0,25 0,79 0,22 7 8 8 5 11 _ — — — — 175 175 175 175 175 175 175 175 175
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XO-72
O-117SL
T0-220
CB-401
CB-71
CB-438)
CB-3011
ICB-3121
2N3632
2N44
THB94
sd1273
2N5590
Thomson 1134-5
CE125
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SD1089
Abstract: 470 03 O SD1098 CE125
Text: 450 .5 1 2 M Hz class C for mobile applications ii com m unications m obiles UHF, classe C TYPE PACKAGE CONFIG. THOMSON-CSF Pout Vcc Pin min Wl (V (MHz) (W) Gp min (dB) T O -46 (CB-4011 SD 1132-4 SD 1115-2 SD 1482 XO-72 SL TO-117 SL .280 4L STUD (B) CE
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XO-72
O-117
XO-72
CB-401
CB-299)
SD1089
470 03 O
SD1098
CE125
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XO-72
Abstract: CB-299 Thomson-CSF CE125
Text: 130. 175 MHz class C for FM mobile applications p\ communications mobiles FM, classe C TYPE PACKAGE CONFIG. V cc V .280 4LSL (B) XO-72 SL TO-117 SL .280 4LSL (B) .280 4LSL (B) CE CE CE CE CE 7,5 7,5 7,5 7,5 7,5 2N 4427 SD 1484-10 SD 1127 2N 6080 SD 1574
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XO-72
O-117
XO-72
CB-401
CB-299)
CB-299
Thomson-CSF
CE125
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MRF245
Abstract: SD1076 CM45-12A BLY22 sd1238 BLX66 MM1669 PT8828 BLY94 PT9780
Text: 450 .512 MHz class C for mobile applications ii com m unications m obiles UHF, classe C TYPE PACKAGE CONFIG. THOMSON-CSF P ou t Vcc Pin min Wl (V (MHz) (W) Gp min (dB) T O -46 (CB-4011 SD 1132-4 SD 1115-2 SD 1482 XO-72 SL TO-117 SL .280 4L STUD (B) CE
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XO-72
O-117
02N6082
BM80-12
SD1416
MM1601
MRF631
MRF245
SD1076
CM45-12A
BLY22
sd1238
BLX66
MM1669
PT8828
BLY94
PT9780
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TRANSISTOR JG 92
Abstract: IFR 730
Text: H * m iG TU&Q rni 1 40 Commerce Drive Montgomeryville, PA 18936-1013 Tel: 215 631-9840 S D 1 4 9 5 - 3 RF & MICROWAVE TRANSISTORS 9Ö0-960MHZ CLASS C, BASE STATIONS • ■ ■ ■ . . ■ CLASS C TRANSISTOR FREQUENCY VOLTAGE POWER OUT POWER GAIN EFFICIENCY
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0-960MHZ
960MHz
SD14S5-03
SD1495-3
900-960MH2
960MH*
33S/S
TRANSISTOR JG 92
IFR 730
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Untitled
Abstract: No abstract text available
Text: ptQcj ucîs M ic m m s e m i 140 Commerce Drive Montgomery vii le, PA 18936-1013 Tel: 215 631-9840 S D 1496-3 RF & MICROWAVE TRANSISTORS 900-960MHz CLASS C, BASE STATIONS C U S S C TRANSISTOR f-RËQUENCY V O tïA G fc POWPR OUT POWER GAiN FFF1CIFNCY COM MO N BASE
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900-960MHz
960MHz
SD1496-3
900-960M
230/S
I65/3
345/S.
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