ERJ8GEYJ100V
Abstract: Johanson Technology C1206C102K1RACTU C1206C103K1RACTU 445-4109-2-ND 478-2666-1-ND 251R15S
Text: HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications FEATURES The innovative Semiconductor Company! Silicon MOSFET Technology Operation from 24V to 50V
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HVV1012-250
429-HVVi
EG-01-DS09B
ERJ8GEYJ100V
Johanson Technology
C1206C102K1RACTU
C1206C103K1RACTU
445-4109-2-ND
478-2666-1-ND
251R15S
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Cycle10s
Abstract: mode 5 IFF L-band RF MOSFET transistor AZ 1
Text: The innovative Semiconductor Company! HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10 s Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V
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HVV1012-250
EG-01-DS09A
429-HVVi
Cycle10s
mode 5 IFF
L-band RF MOSFET
transistor AZ 1
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ap3608
Abstract: ap3608E AP3039 SOIC-14 10V 3W LED DRIVER
Text: Application Note 1025 Design Consideration with AP3039 Prepared by Wei Feng System Engineering Dept. protection to limit the output voltage. The OVP voltage can be set through external resistors. If the output voltage is higher than the OVP high threshold point, it
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AP3039
AP3039
ap3608
ap3608E
SOIC-14
10V 3W LED DRIVER
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GLF2012T
Abstract: GLF2012T100K R1218X R1218XXX1A R1218XXX2A R1218X031A
Text: R1218x SERIES Step-up DC/DC converter for Whilte LED Backlight NO.EA-006-1025 OUTLINE The R1218X Series are PWM control type step-up DC/DC converter ICs with low supply current. The R1218X is fully dedicated to drive White LED with constant current. Each of these ICs consists of an NMOS FET, an
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R1218x
EA-006-1025
R1218X
R1218XXX1A,
R1218XXX2A,
R1218X021A
R1218X041A
GLF2012T
GLF2012T100K
R1218XXX1A
R1218XXX2A
R1218X031A
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Untitled
Abstract: No abstract text available
Text: Product specification WNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET VDS V Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 20 0.036@ VGS=1.8V SOT-23 Descriptions D 3 The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
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WNM2024
OT-23
WNM2024
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WNM2025
Abstract: No abstract text available
Text: Product specification WNM2025 Single N-Channel, 20V, 3.9 A, Power MOSFET VDS V Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 20 0.036@ VGS=1.8V SOT-23-3L Descriptions D 3 The WNM2025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench
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WNM2025
OT-23-3L
WNM2025
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TO-254Z
Abstract: No abstract text available
Text: SFF55N20M SFF55N20Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 55 AMP N-Channel POWER MOSFET DESIGNER’S DATA SHEET Part Number / Ordering Information 1/
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SFF55N20M
SFF55N20Z
SFF55N20
O-254
O-254Z
Fa850
O-254
TO-254Z
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74857
Abstract: 18A60
Text: SPICE Device Model SUD50N025-4m5P Vishay Siliconix N-Channel 25V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUD50N025-4m5P
18-Jul-08
74857
18A60
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HT0440LG
Abstract: 400V switching transistor HT0440 power supply 400v circuit diagram HT0440N4 HT04
Text: HT0440 Preliminary High Voltage Isolated MOSFET Driver Ordering Information Package Options 8-Pin Narrow Body SOIC 8-Pin Plastic DIP HT0440LG HT0440N4 Features General Description ±400V input to output isolation The Supertex HT0440 is a dual high voltage isolated driver
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HT0440
HT0440LG
HT0440N4
HT0440
600pF
HT0440LG
400V switching transistor
power supply 400v circuit diagram
HT0440N4
HT04
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HT0440N
Abstract: HT04
Text: BACK HT0440 Preliminary High Voltage Isolated MOSFET Driver Ordering Information Package Options 8-Pin Narrow Body SOIC 8-Pin Plastic DIP HT0440LG HT0440N4 Features General Description ±400V input to output isolation The Supertex HT0440 is a dual high voltage isolated driver
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HT0440
HT0440LG
HT0440N4
HT0440
600pF
600pF
HT0440N
HT04
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BFC12
Abstract: No abstract text available
Text: SEME BFC12 LAB 4TH GENERATION MOSFET SOT–227 Package Outline. Dimensions in mm inches 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) 2 8 .9 (0 .3 5 0 ) 9 .6 (0 .3 7 8 ) Hex Nut M 4 (4 places) 4 .8 (0 .1 8 7 ) H= 4 .9 (0 .1 9 3 ) (4 places) R 4 .0 (0 .1 5 7 ) 4 .2 (0 .1 6 5 )
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BFC12
BFC12
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separately excited dc motor control
Abstract: variable frequency drive block diagram motor stop with mosfet of 24 volts 60 rpm dc motor three phase motor variable speed control circuit DC PM Motor Servo Amplifier japan servo co FED circuit diagram, variable speed drives separately excited dc motor separately excited motor
Text: Ordering number : EN 4873 Thick Film Hybrid IC STK6217 Unidirectional DC Motor Driver with Constant-Speed Digital Servo Controller output current: 8 A Overview The STK6217 is a hybrid IC that combines in a single package a unidirectional DC motor driver, a PLL
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STK6217
STK6217
LC7991)
separately excited dc motor control
variable frequency drive block diagram
motor stop with mosfet
of 24 volts 60 rpm dc motor
three phase motor variable speed control circuit
DC PM Motor Servo Amplifier
japan servo co FED
circuit diagram, variable speed drives
separately excited dc motor
separately excited motor
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C15VL
Abstract: No abstract text available
Text: DIXYS IGBT IXSH 25N100 Low V,CE sat vCES = 1000 V 1025 = 50 V CE(Sa„ = 3.5 V Short Circuit SOA Capability Symbol Test Conditions VCES T j = 25° C to 150° C 1000 V CGR T j = 2 5 °C to 1 5 0 °C ;R GE=1 M ii 1000 V GES Continuous +20 V GEM Transient i3 0
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25N100
O-247
IXSH25N100
C15VL
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2N4351
Abstract: No abstract text available
Text: SOLID STATE 3875081 01 DE I 3fl?SDfll D010T7? 01E G E S O LID STATE 10977 D T- 35'- 2 . r 2N4351 N-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch FEATURES ABSOLUTE MAXIMUM RATINGS • • • • • Ta = 25“C unless otherwise noted Drain-Source Voltage or Drain-Body V o lta g e .25V
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2N4351
D01CH77
100mA
10sec)
300ms.
2N4351
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marking code g2s
Abstract: No abstract text available
Text: SIEMENS < *,0 0 5 S Silicon N-Channel MOSFET Tetrode •For low-noise, high gain-controlled input stages up to 1GH; ■Operating voltage 5V 1Integrated stabilized bias network X AGC o HF oIn p u t JX-Ih D ra in G2 I HF O u tp u t + DC G1 1 — r GND ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BF1005S
Q62702-F1665
OT-143
1005S
800MHz
BF1005S
marking code g2s
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Carbon dioxide
Abstract: simmer
Text: Superpulse NADA Electronics Leaders in Power Control of DC-switch mode power supplies specifically designed A torange meet the power requirements of low power carbon dioxide lasers for medical and industrial applications. Incorporating proprietary MOSFET technology, the 2000 series has
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EN50082
320x180x150
320x180x150
Carbon dioxide
simmer
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SP2110
Abstract: SP1110 SP6110
Text: INTERNATIONAL RECTIFIER bSE D • HflSSHSE O ü l b B S G ?ÔT H I N R Data Sheet No. PD-1.018B INTERNATIONA!. RECTIFIER E?R SERIES SP Microelectronic Power IC Relay ChipSwitch SIP Relay 1.0 Amp Free Standing 3.0 Amps (with Heat Management 20-280 v a c S’X Power IC Chips
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00V///sec
E50015
RS-443
4A55MS2
SP2110
SP1110
SP6110
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Untitled
Abstract: No abstract text available
Text: APT8065BVR A dvanced P o w er Te c h n o lo g y ' 800V 13A 0.650Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT8065BVR
O-247
APT8065BVR
MIL-STD-750
O-247AD
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diode 152
Abstract: BFC12
Text: IUI i^ E INI SEME BFC12 LAB 4TH GENERATION MOSFET SOT-227 Package Outline. Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS 11 e (0 463) VDSS Terminal 1 Terminal 3 Source 2* Gate Terminal 2 Terminal 4 Drain Source 1
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BFC12
OT-227
MIL-STD-750
diode 152
BFC12
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mosfet 1026
Abstract: 1026 mosfet
Text: ERFS440A Advanced Power MOSFET FEATURES BVdss = 500 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA M ax. @ VOS= 500V
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ERFS440A
IRFS440A
mosfet 1026
1026 mosfet
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HT04
Abstract: No abstract text available
Text: HT0440 P relim ina ry High Voltage Isolated MOSFET Driver Ordering Information Package Options 8-Pin Narrow Body SOIC 8-Pin Plastic DIP HT0440LG HT0440N4 Features General Description □ +400V input to output isolation □ +700V isolation between outputs □
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HT0440
HT0440LG
HT0440N4
HT0440
600pF
HT04
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Untitled
Abstract: No abstract text available
Text: HT0440 S u p e r t e x i n c . Preliminary High Voltage Isolated MOSFET Driver Ordering Information Package Options 8-Pin Narrow Body SOIC 8-Pin Plastic DIP HT0440LG HT0440N4 Features General Description □ ±400V input to output isolation □ ±700V isolation between outputs
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HT0440
HT0440LG
HT0440N4
HT0440
00G441D
600pF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS1OSM-3 HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm • 10V DRIVE • VDSS . 1 5 0 V • TDS ON (MAX) . 1 7 0 m Q
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100ns
1CH23
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IRFP460
Abstract: IRFP460 IR diode sg 89a international rectifier NE 22 dioda rectifier
Text: PD-9.512B International S Rectifier IRFP460 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 5 0 0 V R DS on = 0 . 2 7 0
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IRFP460
O-247
T0-220
O-218
IRFP460
IRFP460 IR
diode sg 89a
international rectifier NE 22
dioda rectifier
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