back Tunnel diode
Abstract: mbd1057 DATASHEET TUNNEL DIODE MBD2057-C18 MBD3057 "tunnel diode" chip assembly Tunnel diode MBD1057-E28 tunnel diode application tunnel diodes
Text: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized
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MIL-PRF-19500
MIL-PRF-35834
back Tunnel diode
mbd1057
DATASHEET TUNNEL DIODE
MBD2057-C18
MBD3057
"tunnel diode" chip assembly
Tunnel diode
MBD1057-E28
tunnel diode application
tunnel diodes
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MBD5057
Abstract: No abstract text available
Text: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized
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MIL-PRF-19500
MIL-PRF-35834
MBD5057
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MP1601
Abstract: MP1303 MP1301
Text: M-Pulse Microwave Inc. 576 Charcot Ave. San Jose, Ca, 95131 Tel: 408 432-1480 Fax:(408) 432-1480 www.mpulsemw.com Tunnel Diodes Part Number MP1101 MP1100 MP1102 MP1103 MP1104 MP1105 MP1201 MP1200 MP1202 MP1203 MP1204 MP1205 MP1301 MP1300 MP1302 MP1303 MP1304
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MP1101
MP1100
MP1102
MP1103
MP1104
MP1105
MP1201
MP1200
MP1202
MP1203
MP1601
MP1303
MP1301
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TUNNEL DIODE
Abstract: tunnel diodes MP1301 MP1305 "tunnel diode" chip assembly MP1451 MP1303 "tunnel diode" wire bonding MP1300 MP1452
Text: M-Pulse Microwave Inc. 576 Charcot Ave. San Jose, Ca, 95131 Tel: 408 432-1480 Fax:(408) 432-1480 www.mpulsemw.com Tunnel Diodes Part Number MP1101 MP1100 MP1102 MP1103 MP1104 MP1105 MP1201 MP1200 MP1202 MP1203 MP1204 MP1205 MP1301 MP1300 MP1302 MP1303 MP1304
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MP1101
MP1100
MP1102
MP1103
MP1104
MP1105
MP1201
MP1200
MP1202
MP1203
TUNNEL DIODE
tunnel diodes
MP1301
MP1305
"tunnel diode" chip assembly
MP1451
MP1303
"tunnel diode" wire bonding
MP1300
MP1452
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tps59610
Abstract: thermistor d503 TP218 IC TPS59124
Text: User's Guide SLUU465 – November 2010 An 8-V to 14-V Vin 2010 Atom E6xx Tunnel Creek Power System The TPS59610EVM-634 evaluation module EVM is a complete solution for the 2010 Atom™ E6xx Tunnel Creek Power System from a 12-V input bus. The EVM uses the TPS59610 for Atom CPU and
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SLUU465
TPS59610EVM-634
TPS59610
TPS51120
TPS54326
TPS59124
TPS51100
TPS74801
CSD86330Q3D)
thermistor d503
TP218 IC
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spice model Tunnel diode
Abstract: dpsN TUNNEL DIODE spice model
Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation
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"tunnel diode" chip assembly
Abstract: "tunnel diode" wire bonding Ablestik gold embrittlement DATASHEET TUNNEL DIODE germanium diode Metelics Tunnel Diode
Text: Application Note Chip and Beam Lead Handling Chip and beam lead devices are packaged for shipment in either waffle packs or Gel-Packs . Chips in waffle packs are somewhat free to move around their wells, and can be accidently dislodged rather easily when the waffle pack is
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603-641-SEMI
"tunnel diode" chip assembly
"tunnel diode" wire bonding
Ablestik
gold embrittlement
DATASHEET TUNNEL DIODE
germanium diode
Metelics
Tunnel Diode
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BPW50
Abstract: tda1000 BD232 PHILIPS SEMICONDUCTOR cqy17 Germanium Diode aa112 GaAs tunnel diode BD232 BPW50-9 74LS00A DIODE BZW70
Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Basic type number W Surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples of such devices, semiconductor chips and Darlington
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PCF1105WP:
GMB74LS00A-DC:
74LS00A;
TDA1000P:
SAC2000:
BPW50
tda1000
BD232 PHILIPS SEMICONDUCTOR
cqy17
Germanium Diode aa112
GaAs tunnel diode
BD232
BPW50-9
74LS00A
DIODE BZW70
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D3PAK
Abstract: tunnel diode application to247 pcb footprint FR4 substrate height and thickness APT9503 APT4016SN "tunnel diode" chip assembly Thermalcote THE 249
Text: APPLICATION NOTE APT9503 By Kenneth W. Dierberger and Denis R. Grafham INNOVATIVE MOUNTING TECHNIQUES ENHANCE THERMAL PERFORMANCE OF THE SURFACE-MOUNT D3 PAK PACKAGE PRESENTED AT POWERSYSTEMS WORLD INTERNATIONAL CONFERENCE & EXHIBIT SEPTEMBER 12, 1995 Page 1
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APT9503
B-1330
O-247,
D3PAK
tunnel diode application
to247 pcb footprint
FR4 substrate height and thickness
APT9503
APT4016SN
"tunnel diode" chip assembly
Thermalcote THE 249
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INCOMING RAW MATERIAL specification
Abstract: INCOMING RAW MATERIAL INSPECTION RAW MATERIAL SPECIFICATION SHEET belt DOCTOR INCOMING RAW MATERIAL NTC Thermistor Quality Thermistor SENSOR plastic raw material back Tunnel diode
Text: INCOMING INSPECTION All raw materials, after being received in, are inspected to verify that their physical and electrical attributes are acceptable. A unique ID# is assigned and used for lot traceability. « Back RAW MATERIAL BLEND NTC thermistor manufacturing begins with the precise blending of raw materials into an organic
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tunnel junction diode
Abstract: tunnel diode high frequency metal detectors circuit "tunnel diode" chip assembly Detectors - Diode ml7700 TUNNEL DIODE diode tunnel
Text: DETECTORS ML 7700-0000 Series DETECTORS 0.1 TO 18.0 GHz FEATURES ♦ Schottky & Tunnel Diode ♦ Limiter Detectors ♦ Broad Frequency Ranges ♦ High Sensitivities ♦ Coaxial & Drop-in DESCRIPTION The M /A -CO M Ltd detector range uses both silicon based Schottky barrier diodes and germ anium based tunnel diodes.
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sufficient800
tunnel junction diode
tunnel diode high frequency
metal detectors circuit
"tunnel diode" chip assembly
Detectors - Diode
ml7700
TUNNEL DIODE
diode tunnel
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back Tunnel diode
Abstract: "back diode" Germanium power DIODE tunnel MBD back diode
Text: METELICS 11E CORP D I b OS 1 35 2 0 0Ü Q 13 0 3 IRLANAR BACK TUNNEL DIODES i lo w freq u en cy Detector Series (To 2 GHz) FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth
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MIL-STD-19500
-65to+
17dBmCW
MBD-1050-C19
MBD-1050-A20
MBD-1050-T80
MBD-1050-T54
MBD-1050-H20
MBD-1050-E26
MBD-205s
back Tunnel diode
"back diode"
Germanium power
DIODE tunnel MBD
back diode
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backward diode
Abstract: tunnel diode General Electric "backward diode"
Text: P j p i GE C P L E S S E Y CT3508-1.2 MIXER & DETECTOR DIODES - INTRODUCTION M ETAL S E M IC O N D U C TO R SC H O TTK Y BA RRIER DIO DES INTRODUCTION A mixer is a sensitive receiver circuit which makes use of the nonlinear properties of a mixer diode to produce a
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CT3508-1
backward diode
tunnel diode General Electric
"backward diode"
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MBD3057-C18
Abstract: MBD2057-C18 DIODE e26 back Tunnel diode MBD1057
Text: JMAR BACK TUNNEL DIODES m «|h Frequency Detector Series (To 18 GHz) U L = FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth MIL-STD-19500 & 883 Capability M AXIM UM RATINGS
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MIL-STD-19500
MBD-1057-C18
MBD-1057-T80
MBD-1057-T54
MBD-1057-H20
MBD-1057-E26
MBD-2057-C18
MBD-2057-T80
MBD-2057-T54
MBD-2057-H20
MBD3057-C18
MBD2057-C18
DIODE e26
back Tunnel diode
MBD1057
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Sampling Phase Detectors
Abstract: "tunnel diode" chip assembly
Text: uc metelics 975 Stewart Avenue • Sunnyvale, California 9 4 0 8 6 • 408-737-8181, FAX: 408-733-7645 RF/ MICROWAVE SUBASSEMBLIES PRODUCTS • • • • • • Switches Detectors - Schottky, Tunnel Limiters Sampling Phase Detectors Other Assemblies Available
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MBD3057-C18
Abstract: MBD2057-C18 MBD-1057-C18 mbd1057-c18 MBD-2057-C18 back Tunnel diode mbd 1057 MBD-3057-C18 MBD-3057-H20 "back diode"
Text: ISPMAR BACK TUNNEL DIODES Iflgl i Frequency Detector Series (To 18 GHz) metelics ID CORPORATION FEATURES • • • • • R u g g e d G e rm a n iu m P lanar Construction Excellent T e m p e ra tu re Stability N o D C Bias R eq uired W id e V id e o B andw idth
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MBD3057-C18
Abstract: back Tunnel diode
Text: PLANAR BACK TUNNEL DIODES IM ” High Frequency D e te cto r Series (To 18 GHz) [ P — o f I" cc?r to iw i ? n * FEATURES • • • • • R u g g e d G e rm a n iu m P la n a r C o n s tru c tio n E x c e lle n t T e m p e ra tu re S ta b ility N o D C Bias R e q u ire d
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Untitled
Abstract: No abstract text available
Text: W hpl HEW LETT m inM PACKARD Avantek Products Threshold Detector 10 to 2000 MHz Technical Data UTD-2004 F eatu res D escription Pin Configuration • Frequency Range: 10 to 2000 MHz The UTD-2004 is a sensitive microwave threshold detector which provides efficient and
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UTD-2004
UTD-2004
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switch diode tunnel
Abstract: No abstract text available
Text: That HEWLETT WlnM PACKARD A vantek Products Threshold D etector 0.1 to 18 GHz Technical Data ATD-18021 Features Description Pin Configuration • Frequency Range: 0.1 to 18 GHz • Sensitive Input: -25 to •10 dBm The ATD-18021 is a sensitive microwave threshold detector
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ATD-18021
ATD-18021
switch diode tunnel
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MBD2057-C18
Abstract: No abstract text available
Text: FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth MIL-STD-19500 & 883 Capability M A X IM U M RATINGS Storage Tem perature. -6 5 to +125°C Operating T e m p e ra tu re . -6 5 to +110°C
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MIL-STD-19500
MBD2057-C18
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tda1000
Abstract: TDA1000P 74LS00a Radiation Detector PCF1105 Germanium Diode aa112
Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Basic type number W Surface acoustic wave device X This type designation code applies to discrete semiconductor devices not integrated circuits , multiples of such devices, semiconductor chips and Darlington
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PCF1105WP:
GMB74LS00A-DC;
74LS00A;
TDA1000P:
SAC2000:
tda1000
TDA1000P
74LS00a
Radiation Detector
PCF1105
Germanium Diode aa112
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Untitled
Abstract: No abstract text available
Text: IB I HEW LETT mLEm P a c k a r d Avantek Products Threshold Detector 10 to 2000 MHz Technical Data UTD-2004 Features Description Pin Configuration • Frequency Range: 10 to 2000 MHz The UTD-2004 is a sensitive microwave threshold detector w hich provides efficient and
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UTD-2004
UTD-2004
G011214
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BPW50
Abstract: tda1000 74LS00A
Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Transistor; power, switching Basic type number W Surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples
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PCF1105WP:
GMB74LS00A-DC:
74LS00A;
TDA1000P:
SAC2000:
BPW50
tda1000
74LS00A
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tda1000
Abstract: BPW50 Germanium Diode aa112 BD232 PHILIPS SEMICONDUCTOR cqy17 74LS00A BZW10-15 DIODE BZW70 BPW50-12 PCF1105WP
Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Transistor; power, switching Basic type number W Surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples
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PCF1105WP:
GMB74LS00A-DC:
74LS00A;
TDA1000P:
SAC2000:
tda1000
BPW50
Germanium Diode aa112
BD232 PHILIPS SEMICONDUCTOR
cqy17
74LS00A
BZW10-15
DIODE BZW70
BPW50-12
PCF1105WP
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