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    "T-75 A" HIGH VOLTAGE DIODES Search Results

    "T-75 A" HIGH VOLTAGE DIODES Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    "T-75 A" HIGH VOLTAGE DIODES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DSEI2X161-02A Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition)75# Circuits Per Package2 Diodes Per Circuit1 I(F) Max. (A) Forward Current V(RRM) (V) Rep.Pk.Rev. Voltage t(rr) Max.(s) Rev. Rec. Time @I(F) (A) (Test Condition)


    Original     		PDF DSEI2X161-02A StyleSOT-227B

    Untitled

    Abstract: No abstract text available
    Text: HD1707 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current80m V(RRM)(V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev.Rec. Time20n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)3.0m V(FM) Max.(V) Forward Voltage.75 @I(FM) (A) (Test Condition)100m


    Original     		PDF HD1707 Current80m Voltage50 Time20n Current25u

    Untitled

    Abstract: No abstract text available
    Text: HD1706 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current80m V(RRM)(V) Rep.Pk.Rev. Voltage80 t(rr) Max.(s) Rev.Rec. Time15n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)3.0m V(FM) Max.(V) Forward Voltage.75 @I(FM) (A) (Test Condition)100m


    Original     		PDF HD1706 Current80m Voltage80 Time15n Current25u

    Untitled

    Abstract: No abstract text available
    Text: BAS32L Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage75 t(rr) Max.(s) Rev.Rec. Time4.0n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition)10m V(FM) Max.(V) Forward Voltage.75 @I(FM) (A) (Test Condition)5.0m


    Original     		PDF BAS32L Current200m Voltage75 Current100u StyleSOD-80

    AAAQ

    Abstract: N2 SOT23-6 mosfet n3 MAX4529 MAX4529CPA MAX4529CSA MAX4529CUA MAX4529CUT-T MAX4529EPA MAX4529ESA
    Text: 19-1262; Rev 0; 3/98 Low-Voltage, Bidirectional RF/Video Switch The MAX4529 is a low-voltage T-switch designed for switching RF and video signals from DC to 300MHz in 50Ω and 75Ω systems. This switch is constructed in a “T” configuration, ensuring excellent high-frequency off


    Original     		PDF MAX4529 300MHz -80dB 10MHz. MAX4529 AAAQ N2 SOT23-6 mosfet n3 MAX4529CPA MAX4529CSA MAX4529CUA MAX4529CUT-T MAX4529EPA MAX4529ESA

    Untitled

    Abstract: No abstract text available
    Text: 19-1262; Rev 1; 5/01 Low-Voltage, Bidirectional RF/Video Switch The MAX4529 is a low-voltage T-switch designed for switching RF and video signals from DC to 300MHz in 50Ω and 75Ω systems. This switch is constructed in a “T” configuration, ensuring excellent high-frequency off


    Original     		PDF MAX4529 300MHz -80dB 10MHz. MAX4529

    MAX4529

    Abstract: MAX4529CPA MAX4529CSA MAX4529CUA MAX4529CUT-T MAX4529EPA MAX4529ESA MAX4529EUA MAX4529EUT-T N2 SOT23-6
    Text: 19-1262; Rev 1; 5/01 Low-Voltage, Bidirectional RF/Video Switch The MAX4529 is a low-voltage T-switch designed for switching RF and video signals from DC to 300MHz in 50Ω and 75Ω systems. This switch is constructed in a “T” configuration, ensuring excellent high-frequency off


    Original     		PDF MAX4529 300MHz -80dB 10MHz. MAX4529 MAX4529CPA MAX4529CSA MAX4529CUA MAX4529CUT-T MAX4529EPA MAX4529ESA MAX4529EUA MAX4529EUT-T N2 SOT23-6

    IC Analog Switch Chip

    Abstract: MAX4529 MAX4529CPA MAX4529CSA MAX4529CUA MAX4529CUT-T MAX4529EPA MAX4529ESA MAX4529EUA MAX4529EUT-T
    Text: 19-1262; Rev 1; 5/01 Low-Voltage, Bidirectional RF/Video Switch The MAX4529 is a low-voltage T-switch designed for switching RF and video signals from DC to 300MHz in 50Ω and 75Ω systems. This switch is constructed in a “T” configuration, ensuring excellent high-frequency off


    Original     		PDF MAX4529 300MHz -80dB 10MHz. MAX4529 IC Analog Switch Chip MAX4529CPA MAX4529CSA MAX4529CUA MAX4529CUT-T MAX4529EPA MAX4529ESA MAX4529EUA MAX4529EUT-T

    Untitled

    Abstract: No abstract text available
    Text: www.MICROSEMI.com UM4000 / UM4900 HIGH POWER PIN DIODES RoHS Compliant Versions Available DESCRIPTION K EY FEAT URES ABSOLU T E M AX I M U M RAT I N GS AT 2 5 º C U N LESS OT H ERWI SE SPECI FI ED Package Condition UM4000 PD (W) C D • Series resistance rated at 0.5


    Original     		PDF UM4000 UM4900 UM4000 UMX4000, UMX4900)

    Untitled

    Abstract: No abstract text available
    Text: UM7000 / UM7100 / UM7200 HIGH POWER PIN DIODES TM RoHS Compliant Versions Available K EY FEAT U RES DESCRIPT ION • Voltage ratings to 1000V UM7000 • Average power dissipation to 10 W  Series resistance as low as 0.25 Ω  Carrier lifetime greater than 2.5 µs


    Original     		PDF UM7000 UM7100 UM7200 UM7000) UM7200

    Untitled

    Abstract: No abstract text available
    Text: OM6OL6OSB OM50F60SB Prelim inary Data Sheet OM45L120SB OM35F12QSB IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES |o _ o i © © High Current, High Voltage 60 0V And 1200V. Up To 75 A m p IG B T s With F R E D Diodes FEATURES • • • • •


    OCR Scan     		PDF OM50F60SB OM45L120SB OM35F12QSB 60L60SB 45L120SB 50F60SB 35F120SB 45L120SB

    Untitled

    Abstract: No abstract text available
    Text: BAS28 y V SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 consists o f tw o separate diodes in one m icrominiature envelope intended fo r surface mounting. It concerns fast-switching general-purpose diodes. Q UICK REFERENCE D A T A VR max. 75 V Repetitive peak reverse voltage


    OCR Scan     		PDF BAS28 BAS28 BAW62;

    BAW62

    Abstract: FR 309 diode
    Text: S ’ S’S - o z z . BAW62 HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a D O -35 envelope. The BAW 62 is prim arily intended for fast logic applications. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage VR max. 75 V Repetitive peak reverse voltage


    OCR Scan     		PDF BAW62 BAW62 EAVV62 FR 309 diode

    1N4000 silicon diodes

    Abstract: 1N4000 - 1N4007 1n4000 1n4000 a 1n4007
    Text: 1N4001 . 1N4007 BY133. P513 FA G O R^ 1Amp. Silicon Rectifier Diodes Dimensions in mm. DO-15 Plastic Voltage 50 to 1.600 V. Ï ! to ; 1— il_ o\ Ç.35 58.5 Current 1.0 A. at 75°C. a t r0 .2 0.5 • Low cost • Diffused junction • High current capability


    OCR Scan     		PDF 1N4001 1N4007 BY133. DO-15 1N4000 1N4000 silicon diodes 1N4000 - 1N4007 1n4000 a 1n4007

    CIL 1302

    Abstract: cil 1305
    Text: T E L E D Y N E COMPONENTS a*U7fe.aa ÜOÜbt.75 3 EflE D ECONOMY LINE CURRENT REGULATOR FIELD EFFECT DIODES XCTP1U AiC CIL-1300 thru CIL-1305 c m • CURRENT CONSTANT OVER WIDE VOLTAGE RANGE • HIGH SOURCE IMPEDANCE • CONNECT IN PARALLEL FOR HIGHER CURRENT


    OCR Scan     		PDF CIL-1300 CIL-1305 CIL 1302 cil 1305

    Untitled

    Abstract: No abstract text available
    Text: t.ME D • Sfi7bbSl OGDTV'îS 007 « N X n MAXIM I N T E G R A T E D P R O D U C T S 19-3786; Rav 1; 9/92 / l / l / I X I / l / l High-Speed, Low -Voltage, M icropow er Op Amps D escrip tio n The MAX402/MAX438 require less than 75|iA of supply current while delivering 2MHz gain bandw idth with 7V/|xs


    OCR Scan     		PDF MAX402/MAX438 MAX402) MAX438) MAX402 MAX403 10MHz AX403/MAX439 375nA MAX438EPA MAX438ESA

    TRANSISTOR NPN BA RV SOT - 89

    Abstract: bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124
    Text: Selection Guide Page Small Signal Transistors 44 Small Signal DMOS FETs 55 Junction FETs 56 Digital Transistor 56 Power Transistors 57 Switching Diodes 60 Schottky Diodes 63 Low Leakage Diodes 66 Ultra Low Leakage Diodes 66 Stabistor Diodes 67 Zener Diodes


    OCR Scan     		PDF CQ89N CQ89DS CQ89MS CQ89NS OT-89 CMPSS061 CMPS5062 CMPS5063 CMPS5064 CZS5064 TRANSISTOR NPN BA RV SOT - 89 bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124

    Semicon volume 1

    Abstract: HVC-50F s5a1 LTA 902 sx
    Text: Pulse Rated 5W Zener Diode FEATURES • 1200 WATTS PEAK POWER • 5 WATTS @ 75°C AME5IENT • SURGE RATED • LOW FORWARD VO LTAG E DROP • COLD CASE DESIGN (M OLDED) • H IG H TEM PERATURE OPERATION • SPECIAL M A TC H IN G A V A ILA B LE Semicon TZC Zener diodes are high grade Solid State Voltage


    OCR Scan     		PDF 1TP600 CTP700 CTP800 CTP1000 CTP1200 VB100 VB200 VB300 VB400 VB500 Semicon volume 1 HVC-50F s5a1 LTA 902 sx

    Untitled

    Abstract: No abstract text available
    Text: t eccor e l e c t r o n i c s i n c \ •is dooiis? 3 5T|flä7aön r - i t - 2,3 S I A M C ? !# !! - The New Standard I If your electronic equipment is being protected by zener diodes, gas discharge tubes, MOV’s or other types of protectors, you are taking un­


    OCR Scan     		PDF O-218 O-202 O-202 O-220 BR601

    1N4T48

    Abstract: 1N5526B JANTX diode zener 3144 voltage 1N941 1N5283 diode zener 3144 1N4611A 1N3496 1N3497 1N3499
    Text: C 0 D I SEMICONDUCTOR INC 2RE D 177S47G OGDGbSS b • C O D I M il 7=0 », 0°i c Silicon Diodes JEDEC REGISTERED TEMPERATURE COMPENSATED VOLTAGE REFERENCE DIODES D O - 7 Package V o lta g e C u rre n t mA V o lts 62 62 64 6.4 64 64 65 66 66 66 8 4 8 5 85


    OCR Scan     		PDF 177S47G T-n-07 1N821* 1N823Â 1N825Â 1N827Â 1N829* 1N3500 1N3496 1N3497 1N4T48 1N5526B JANTX diode zener 3144 voltage 1N941 1N5283 diode zener 3144 1N4611A 1N3499

    1N4148 DL-35

    Abstract: n4148 1N4148 DL-35 PACKAGE Diode N4148 DL4148 package DO-41 package 1N4148 R1200 R1200F R1500 R1800
    Text: DIODES INC m 35E D 20407=53 ÜQ0Q3b0 T BiDII HIGH VOLTAGE RECTIFIERS OPERATING/STORAGE TEMPERATURE RANGE -6 5 °C to +150°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz Maximum Forward Peak Surge Current


    OCR Scan     		PDF VOLTAGE/DO-41 /DO-15 R1200 R1500 R1800 R2000 R2500 R3000 DO-15 1N914 1N4148 DL-35 n4148 1N4148 DL-35 PACKAGE Diode N4148 DL4148 package DO-41 package 1N4148 R1200F

    S216S02 Application circuit

    Abstract: PC113 SHARP GP1U78R GP1S73P S202S02 application IS471FS pt461100 s26md IS489 GP1A71A1
    Text: Solid State Low Po we v o l t a g e R e Chopper R< P M i T i a r v H e Quick Reference Guide Quick Reference Guide • Infrared Emitting Diodes « For IR Data Communication IrDA » Mode! No. Features Operating Suppply Voltage v cc (V) GL1F20 Applicable to IrDA 1.0


    OCR Scan     		PDF GL1F20 12MHz S101S06V S201S06V S102S02 S112S02 S116S02 S202S02 S212S02 S216S02 S216S02 Application circuit PC113 SHARP GP1U78R GP1S73P S202S02 application IS471FS pt461100 s26md IS489 GP1A71A1

    OM35F120SB

    Abstract: OM45L120SB OM50F60SB OM60L60SB SCHEMATIC WITH IGBTS R5151
    Text: Preliminary Data Sheet OM6OL6OSB OM50F60SB OM45L120SB QM35F120SB IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High C urrent, High Voltage 600V A nd 1200V, Up To 75 A m p IGBTs W ith FRED Diodes FEATURES • • • • • • • Includes Internal FRED Diode


    OCR Scan     		PDF OM45L120SB OM50F60SB OM35F120SB MIL-S-19500, 20VDC 60L60SB 45L120SB 50F60SB 35F120SB 60L60SB OM35F120SB OM60L60SB SCHEMATIC WITH IGBTS R5151

    IN827 Temperature Compensated Zener

    Abstract: 1N4T48 IN4571 1N4611A 1N5306 JAN 1n829 noise diode zener 3144 voltage in4572 IN821 IN827
    Text: C 0 D I SEMICONDUCTOR INC 2«iE D 1 7 7 5 4 7 0 0D0 CI L55 b B I C 0 D I Mi l ElSifl ni T -O U O °l c Silicon Diodes JEDEC REGISTERED TEMPERATURE COMPENSATED VOLTAGE REFERENCE DIODES D O - 7 Package V o lta ge C u rre n t mA V o lts 62 62 64 6.4 64 64 65


    OCR Scan     		PDF 0D0CIL55 T-II-07 1N821Â 1N823Â 1N825* 1N827Â 1N829* 1N3500 1N3496 1N3497 IN827 Temperature Compensated Zener 1N4T48 IN4571 1N4611A 1N5306 JAN 1n829 noise diode zener 3144 voltage in4572 IN821 IN827