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    "SOT 89" MARKING Search Results

    "SOT 89" MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    "SOT 89" MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking 93, sot-89

    Abstract: MARKING 93 SOT-89 SOT89 marking b5 STMicroelectronics marking code date sot-89 ST SOt-89 Marking MARKING 93 SOT89 sot-89 marking H1 H1 SOT-89 STN82 STF826
    Text: STF826 PNP medium power transistor Datasheet - production data Features • In compliance with the 2002/93/EC European directive • Available in tape & reel packing • Surface mounting devices in medium power SOT-223 and SOT-89 packages SOT-89 Applications


    Original     		PDF STF826 2002/93/EC OT-223 OT-89 OT-89 STF826 DocID11748 marking 93, sot-89 MARKING 93 SOT-89 SOT89 marking b5 STMicroelectronics marking code date sot-89 ST SOt-89 Marking MARKING 93 SOT89 sot-89 marking H1 H1 SOT-89 STN82

    PXT8050

    Abstract: Y1 SOT-89 marking y1 marking y1 sot-89
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 PXT8050 Plastic-Encapsulate Transistors SOT-89 TRANSISTOR NPN FEATURES z Compliment to PXT8550 1. BASE MARKING: Y1 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF OT-89 PXT8050 PXT8550 100mA 800mA 800mA, 30MHz PXT8050 Y1 SOT-89 marking y1 marking y1 sot-89

    FCX591

    Abstract: marking p1
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors FCX591 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR 1 MARKING:P1 2 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-89 FCX591 OT-89 -500mA -50mA -100mA 100MHz FCX591 marking p1

    Untitled

    Abstract: No abstract text available
    Text: STF826 PNP medium power transistor Datasheet - production data Features • In compliance with the 2002/93/EC European directive s ct • Available in tape & reel packing • Surface mounting devices in medium power SOT-223 and SOT-89 packages SOT-89 Applications


    Original     		PDF STF826 2002/93/EC OT-223 OT-89 OT-89 STF826 DocID11748

    t9005

    Abstract: No abstract text available
    Text: TS9005 600 mA CMOS LDO Voltage Range 1.5 to 3.8 Volts SOT-89 SOT-223 General Description The TS9005 family of positive, linear regulators feature low ground current 30µA typ. with low dropout voltage, making them ideal for battery applications. The space-saving SOT-89 and SOT-223


    Original     		PDF TS9005 OT-89 OT-223 TS9005 OT-89 600mA 30BSC 0906BSC t9005

    P025H

    Abstract: 817A STF817A ic 817A 817a Ic STF81 transistor marking 551 sot-89
    Text: STF817A PNP SILICON POWER TRANSISTOR PRELIMINARY DATA • SURFACE-MOUNTING SOT-89 PACKAGE IN TAPE & REEL APPLICATIONS ■ CHARGE POWER SWITCH FOR MOBILE PHONE DESCRIPTION The device is manufactured using Epitaxial Planar technology. SOT-89 MARKING: 817A INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF STF817A OT-89 OT-89 P025H 817A STF817A ic 817A 817a Ic STF81 transistor marking 551 sot-89

    PXT8050

    Abstract: Y2 SOT-89 PXT8550
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89 Plastic-Encapsulate Transistors PXT8550 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Compliment to PXT8050 1 2. COLLECTOR 2 MARKING: Y2 3 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


    Original     		PDF OT-89 PXT8550 OT-89 PXT8050 -100mA -800mA -800mA, -80mA PXT8050 Y2 SOT-89 PXT8550

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2391 TRANSISTOR NPN SOT-89-3L FEATURES Low VCE(sat) 1.BASE 123 2.COLLECTOR Marking: DT 3.EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-89-3L 2SD2391 OT-89-3L 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L HM4033 TRANSISTOR PNP 1. BASE FEATURES z High Current z General Purpose Amplifier Applications 2. COLLECTOR 3. EMITTER MARKING:H4033 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-89-3L OT-89-3L HM4033 H4033 -150mA -15mA -500mA -50mA

    BF620

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors BF620 SOT-89 TRANSISTOR NPN 1. BASE FEATURES z Low current (max. 50mA) z High voltage (max. 300V). z Video output stages. 2. COLLECTOR 1 2 3. EMITTER 3 Marking：DC


    Original     		PDF OT-89 BF620 OT-89 100MHz BF620

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SA1740 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES z High breadown voltage z Excellent hFE linearlity 2. COLLECTOR 3. EMITTER Marking: AK MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-89-3L 2SA1740 OT-89-3L -300V -50mA -50mA -10mA -150V -50mA,

    BR A44

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L A44 TRANSISTOR NPN 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage z High Breakdown Voltage 2. COLLECTOR 3. EMITTER MARKING: A44 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-89-3L OT-89-3L 100mA BR A44

    marking TQ

    Abstract: 2SD1119 marking 3A sot-89
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD1119 SOT-89 TRANSISTOR NPN 1. BASE FEATURES z Low collector-emitter saturation voltage VCE(sat) z Satisfactory operation performances at high efficiency with the low


    Original     		PDF OT-89 2SD1119 OT-89 500mA 200MHz marking TQ 2SD1119 marking 3A sot-89

    CHT2222XGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHT2222XGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SC-62/SOT-89 * Small flat package. SC-62/SOT-89


    Original     		PDF CHT2222XGP SC-62/SOT-89 SC-62/SOT-89) 600mA) 200ns CHT2222XGP

    2SA1740

    Abstract: marking AK
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SA1740 SOT-89 TRANSISTOR PNP 1. BASE FEATURES z High breadown voltage z Excellent hFE linearlity 2. COLLECTOR 1 2 3. EMITTER Marking: AK 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-89 2SA1740 OT-89 -300V -50mA -50mA -10mA -150V -50mA, 2SA1740 marking AK

    2SB766A

    Abstract: 2SD874A
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD874A SOT-89 TRANSISTOR NPN 1. BASE FEATURES z Large collector power dissipation PC z Low collector-emitter saturation voltage VCE(sat) Complementary to 2SB766A z


    Original     		PDF OT-89 2SD874A OT-89 2SB766A 500mA 500mA 200MHz 2SB766A 2SD874A

    CHTA42XGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHTA42XGP SURFACE MOUNT NPN SILICON Transistor VOLTAGE 300 Volts CURRENT 0.5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-62/SOT-89 FEATURE * Small flat package. SC-62/SOT-89


    Original     		PDF CHTA42XGP SC-62/SOT-89 100MHz CHTA42XGP

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD874A SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES z Large collector power dissipation PC z Low collector-emitter saturation voltage VCE(sat) Complementary to 2SB766A


    Original     		PDF OT-89-3L 2SD874A OT-89-3L 2SB766A 500mA 500mA 200MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L A92 TRANSISTOR PNP 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage z High Breakdown Voltage 2. COLLECTOR 3. EMITTER MARKING: A92 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-89-3L OT-89-3L -200V -300V -10mA -80mA -20mA -10mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BF622 TRANSISTOR NPN 1. BASE FEATURES z Low Current z High Voltage 2. COLLECTOR 3. EMITTER AAPLICATIONS z Video Output Stages MARKING:DA MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-89-3L OT-89-3L BF622 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BF622 TRANSISTOR NPN 1. BASE FEATURES z Low Current z High Voltage 2. COLLECTOR 3. EMITTER AAPLICATIONS z Video Output Stages MARKING:DA MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-89-3L OT-89-3L BF622 100MHz

    2SB1440

    Abstract: 2SD2185
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1440 SOT-89 TRANSISTOR PNP 1. BASE FEATURES z Low collector-emitter saturation voltage VCE(sat) z For low-frequency output amplification z Complementary to 2SD2185


    Original     		PDF OT-89 2SB1440 OT-89 2SD2185 -200mA -50mA 200MHz 2SB1440 2SD2185

    Untitled

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ 2SD874THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features SOT-89 TRANSISTOR design, excellent power dissipation offers • Batch process NPN


    Original     		PDF OD-123+ 060TYP FM140-MH FM150-MH FM160-MH FM180-M FM1100-MH FM1150-MH FM1200-MH FM120-MH

    ic bsp 350

    Abstract: A 89 E bss89 sot-223 KA marking code sot 89 marking code s0 BSS87 bsp 87
    Text: SIEMENS SIPMOS Small-Signal Transistors VDS /q ^ D S o n BSP 89 BSS 87 BSS 89 = 240 V = 0.29 . . . 0.34 A = 6 -0 Q • N channel • E nhancem ent mode • Packages: SOT-223, SOT-89, TO-92 ') Type Marking Ordering code for version in for version on for version on for version in


    OCR Scan     		PDF OT-223, OT-89, 702-S 62702-S E6288: E6325: ic bsp 350 A 89 E bss89 sot-223 KA marking code sot 89 marking code s0 BSS87 bsp 87