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    "POWER DIODE" 10A 800V Search Results

    "POWER DIODE" 10A 800V Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    "POWER DIODE" 10A 800V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APT10SCD120BCT 1200V 10A Zero Recovery Silicon Carbide Schottky Diode BCT T O PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times (trr) • Higher Reliability Systems


    Original     		PDF APT10SCD120BCT O-247

    Untitled

    Abstract: No abstract text available
    Text: APT10SCD120B 1200V, 10A Zero Recovery and Ultra Low Leakage SiC Rectifier Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems


    Original     		PDF APT10SCD120B O-247

    Untitled

    Abstract: No abstract text available
    Text: APT10SCE170B 1700V 10A Zero Recovery Silicon Carbide Schottky Diode PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Zero Recovery Times trr • Higher Reliability Systems • Popular TO-247 Package


    Original     		PDF APT10SCE170B O-247

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA IXFA IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P VDSS ID25 TO-220AB (IXFP) TO-3P (IXFQ) RDS(on) trr G G D S S G D (TAB) DS = 800V = 10A Ω ≤ 1.1Ω


    Original     		PDF IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P O-220AB O-263 250ns O-247

    Untitled

    Abstract: No abstract text available
    Text: SCT2450KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 450mW ID 10A PD 85W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode


    Original     		PDF SCT2450KE 450mW O-247 R1102B

    Untitled

    Abstract: No abstract text available
    Text: S2305 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 450mW ID 10A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode


    Original     		PDF S2305 450mW R1102B

    300a 1000v thyristor

    Abstract: 100a 1000v thyristor thyristor 10A NTE308 53 diode
    Text: NTE308 Integrated Thyristor/Rectifier ITR TV Horizontal Deflection & Commutating Switch Absolute Maximum Ratings: Repetitive Peak Forward Off–State and Reverse Voltage, VDRM, VRRM . . . . . . . . . . . . . . . . . . . 800V RMS On–State Current, ITRMSM, IFRMSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A


    Original     		PDF NTE308 16kHz) 300a 1000v thyristor 100a 1000v thyristor thyristor 10A NTE308 53 diode

    NTE310

    Abstract: No abstract text available
    Text: NTE310 Integrated Thyristor/Rectifier ITR TV Horizontal Deflection & Trace Switch Absolute Maximum Ratings: Repetitive Peak Forward Off–State and Reverse Voltage, VDRM, VRRM . . . . . . . . . . . . . . . . . . . 800V RMS On–State Current, ITRMSM, IFRMSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A


    Original     		PDF NTE310 16kHz) NTE310

    mosfet 10a 800v

    Abstract: MOSFET 800V 10A SSH10N80A mosfet 10a 800v fs
    Text: N-CHANNEL POWER MOSFET SSH10N80A FEATURES BVDSS = 800V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 800V


    Original     		PDF SSH10N80A mosfet 10a 800v MOSFET 800V 10A SSH10N80A mosfet 10a 800v fs

    Untitled

    Abstract: No abstract text available
    Text: R8010ANX Nch 800V 10A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 0.56W ID 10A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		PDF R8010ANX O-220FM R1102A

    SMK1080

    Abstract: No abstract text available
    Text: SMK1080FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • Drain-Source breakdown voltage: BVDSS=800V  Low gate charge: Qg=58nC Typ.  Low drain-source On resistance: RDS(on)=1.1Ω (Max.)  RoHS compliant device  100% avalanche tested


    Original     		PDF SMK1080FD SMK1080 O-220F-3L SDB20D45 14-NOV-12 KSD-T0O113-000 SMK1080

    WF-260

    Abstract: No abstract text available
    Text: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm [0502] FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0


    Original     		PDF YG225C8 13Min SC-67 YG225N8 YG225D8 WF-260

    YG225D8

    Abstract: power Diode 800V 10A DIODE 10a 800v
    Text: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0 2.54±0.2


    Original     		PDF YG225C8 13Min SC-67 YG225C8 YG225N8 YG225D8 YG225D8 power Diode 800V 10A DIODE 10a 800v

    DIODE 10a 800v

    Abstract: YG225D8 power Diode 800V 10A YG225C8 YG225N8 N8 Diode
    Text: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm [0502] FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0


    Original     		PDF YG225C8 13Min SC-67 YG225C8 YG225N8 YG225D8 DIODE 10a 800v YG225D8 power Diode 800V 10A YG225N8 N8 Diode

    Untitled

    Abstract: No abstract text available
    Text: YG225C8,N8,D8 10A (800V / 10A) Outline drawings, mm [0502] FAST RECOVERY DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 15±0.3 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 +0.2 Features Insulated package by fully molding High voltage by mesa design 0.7±0.2 0.6 -0


    Original     		PDF YG225C8 13Min SC-67 YG225N8 YG225D8

    MOSFET 800V 10A TO-3P

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		PDF 10N80 10N80 10N80L-T3P-T QW-R502-218 MOSFET 800V 10A TO-3P

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		PDF 10N80 10N80 10N80L-T3P-T QW-R502-218

    MOSFET 800V 10A TO-3P

    Abstract: 10n80 mosfet 337
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		PDF 10N80 10N80 10N80L-T3P-T 10N80G-T3P-T 10N80L-TF1-T 10N80G-TF1ues QW-R502-218 MOSFET 800V 10A TO-3P mosfet 337

    mosfet 10a 800v

    Abstract: MOSFET 800V 10A TO-3P 10N80 MOSFET 800V 10A 10N80L mosfet 10a 800v high power
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		PDF 10N80 10N80 10N80L-T3P-T 10N80G-T3P-T 10N80L-TF1-T 10N80G-t QW-R502-218 mosfet 10a 800v MOSFET 800V 10A TO-3P MOSFET 800V 10A 10N80L mosfet 10a 800v high power

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		PDF 10N80 10N80 10N80L-T3P-T 10N80G-T3P-T 10N80L-TC3-T 10N8at QW-R502-218

    10N80L

    Abstract: 10n80 MOSFET 800V 10A TO-3P mosfet 10a 800v high power
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		PDF 10N80 10N80 10N80L-T3P-T 10N80G-T3P-T 10N80L-TC3-T 10N80G-TC3ues QW-R502-218 10N80L MOSFET 800V 10A TO-3P mosfet 10a 800v high power

    FQA10N80C

    Abstract: No abstract text available
    Text: TM FQA10N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA10N80C FQA10N80C

    MOSFET 800V 10A

    Abstract: ssf10n80a Tc-25-t
    Text: SSF10N80A Advanced Power MOSFET FEATURES BVdss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS= 800V


    OCR Scan     		PDF SSF10N80A MOSFET 800V 10A ssf10n80a Tc-25-t

    SSH10N80A

    Abstract: 10N80A 1017 mosfet
    Text: SSH1 0 N8 0 A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology 800 V BVpss ~ ^DS on = Lower Input Capacitance Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA (M ax.) @ VDS= 800V


    OCR Scan     		PDF SSH10N80A SSH10N80A 10N80A 1017 mosfet