SMD 8A TRANSISTOR
Abstract: AN735 MAX1710 MAX1711 MAX1712 MAX1846 MAX1847 MAX1864 MAX1865 MAX1917
Text: Maxim > App Notes > AUTOMOTIVE GENERAL ENGINEERING TOPICS PROTOTYPING AND PC BOARD LAYOUT POWER-SUPPLY CIRCUITS Keywords: printed circuit board, PCB layout, parasitic inductance, parasitic capacitance, EMI, DC-DC, dc dc, converters, convertors, ground plane, ground loop
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100MHz.
MAX1711:
MAX1712:
MAX1846:
MAX1847:
MAX1864:
MAX1865:
MAX1917:
MAX668:
SMD 8A TRANSISTOR
AN735
MAX1710
MAX1711
MAX1712
MAX1846
MAX1847
MAX1864
MAX1865
MAX1917
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marx and generator
Abstract: SIMCARD disfim GUNS marx generator varicon avx quartz
Text: High Power Capacitors Calculation Form DESIGN Specification Your Choice Capacitance Working voltage Rms current Frequency Ripple voltage Ambient temperature Lifetime @ Vw,Irms and θamb Parasitic inductance Cooling conditions C µF Vw (V) Irms (Arms) F (Hz)
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Abstract: No abstract text available
Text: RF CAPACITORS KEY BENEFITS • New technology surface-mount capacitor based on a special semiconductor process • Capacitance is extremely stable in a wide range of frequencies from 1 MHz to 15 GHz • High Q, low ESR, and low parasitic inductance ~0.046 nH
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VMN-PT9108-0506
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capacitors smd ghz
Abstract: No abstract text available
Text: RF CAPACITORS KEY BENEFITS • New technology surface-mount capacitor based on a special semiconductor process • Capacitance is extremely stable in a wide range of frequencies from 1 MHz to 15 GHz • High Q, low ESR, and low parasitic inductance ~0.046 nH
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VMN-PT91080504
capacitors smd ghz
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Abstract: No abstract text available
Text: PRODUCT SHEET V I S H A Y I N T E R T E C H N O L O G Y, I N C . CAPACITORS Model HPC0402A High Performance, High Precision Surface Mount 0402 Capacitor for RF Applications Industry first: • Silicon-based SMD RF capacitor • 0402-sized device to offer accuracy over 22 pF
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HPC0402A
0402-sized
30-Aug-02
100pF
VMN-PT9030-0209
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"parasitic capacitance" smd
Abstract: 0603size
Text: High-Performance, High-Precision 0603 SMD RF Capacitor/HPC 0603A The industry’s first silicon 0603-size SMD RF capacitor – 0.8 pF-560 pF, 1% tolerance, capacitance stability from 1 MHz to 15 GHz FEATURES • New technology surface-mount capacitor based on a special
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0603-size
pF-560
04-Jun-04
VMN-PT9108-0409
"parasitic capacitance" smd
0603size
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SMD Electrolytic CAPACITORS
Abstract: smd code HF transistor SMD electrolytic capacitor 22V10L Aluminum Electrolytic ESL SMD Capacitor types ceramic axial capacitors HF smd code plastic capacitors smd code capacitor
Text: CMOS PLD Selecting Decoupling Capacitors for Atmel’s PLDs Introduction This application note provides a summary of information needed when selecting decoupling capacitors for Atmel Programmable Logic Devices. A 0.22-µF, multi-layer ceramic or plastic dielectric capacitor is recommended for such use. Either surfacemount SMD or radial-leaded devices
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Abstract: No abstract text available
Text: VISHAY www.vishay.com Resistive Products Technical Note RFCS - Silicon SMD RF Capacitor GENERAL INFORMATION The RFCS Component All of the traditional performance characteristics of the MNOS technology can be found in the RFCS product: Thin film MNOS capacitors are a well-established
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30-Jun-11
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Untitled
Abstract: No abstract text available
Text: December 1999 LP2967 Dual Micropower 150 mA Low-Dropout Regulator in micro SMD Package General Description Features The LP2967 is a 150 mA, dual fixed-output voltage regulator designed to provide ultra low-dropout and low noise in battery powered applications.
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LP2967
150mA
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LP2967
Abstract: No abstract text available
Text: November 1999 LP2967 Dual Micropower 150 mA Low-Dropout Regulator in micro SMD Package General Description Features The LP2967 is a 150 mA, dual fixed-output voltage regulator designed to provide ultra low-dropout and low noise in battery powered applications.
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150mA
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LP2979
Abstract: LP2979IBP-2828
Text: LP2979 Micro-power Ultra Low-Dropout Regulator in micro SMD Package General Description Features The LP2979 is a 150 mA, fixed output voltage regulator designed to provide ultra low-dropout and low noise in battery powered applications. n n n n n n n n n n
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LP2979
LP2979
LP2979IBP-2828
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Untitled
Abstract: No abstract text available
Text: September 1999 LP2967 Dual Micropower 150 mA Low-Dropout Regulator in micro SMD Package General Description Features The LP2967 is a 150 mA, dual fixed-output voltage regulator designed to provide ultra low-dropout and low noise in battery powered applications.
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LP2967
150mA
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sot-23 Marking M6
Abstract: FET marking codes MOSFET P-channel SOT-23 m6 sot-23 pinout bf992 application FET SOT-223 N-Channel fet m90 BFT46 SFs SOT23 6x marking sot-23 p-channel
Text: SMDFETs DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assem bly cost. The three categories of FET’s each have its own attributes
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BSP121
BSP126
BSP205
BSP206
BSP220
BSP225
BSR56
BSR57
BSR58
BSS83
sot-23 Marking M6
FET marking codes
MOSFET P-channel SOT-23
m6 sot-23 pinout
bf992 application
FET SOT-223 N-Channel
fet m90
BFT46
SFs SOT23
6x marking sot-23 p-channel
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SMD CODE MARKING s7 SOT23
Abstract: PMBFJ111 PMBFJ174 BSR56 BFT46
Text: SMD FET’s DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own attributes
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applicat174
PMBFJ175
PMBFJ176
PMBFJ177
OT-23
OT-89
OT-143
OT-223
OT-23
SMD CODE MARKING s7 SOT23
PMBFJ111
PMBFJ174
BSR56
BFT46
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode FEATURES • Plastic SMD envelope • High switching speed B A S 16W QUICK REFERENCE DATA SYMBOL MAX. UNIT continuous reverse voltage 75 V V RRM repetitive peak reverse
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OT323
BAS16W
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors Prelim inary »pecification Silicon planar epitaxial high-speed switching diode FEATURES BAS216 QUICK REFERENCE DATA • SMD envelope SYMBOL • High speed VR continuous reverse voltage 75 V V rrm repetitive peak reverse voltage 85
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BAS216
BAS216
OD110.
msas66
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smd diode a7
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon planar epitaxial high-speed double diode FEATURES • Plastic SMD envelope • High switching speed • General application. BAV99W QUICK REFERENCE DATA SYMBOL CONDITIONS UNIT Vr continuous reverse voltage
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BAV99W
OT323)
smd diode a7
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon planar epitaxial BAV70W high-speed double diode FEATURES • Plastic SMD envelope • High switching speed • General application. QUICK REFERENCE DATA SYMBOL CONDITIONS MAX. UNIT Per diode Vr continuous reverse
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BAV70W
OT323
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Untitled
Abstract: No abstract text available
Text: bbSB^Bl Philips Semiconductors QQ5H351 T56 BBAPX Preliminary specification Silicon planar epitaxial high-speed switching diode — BAS216 N AUER PHILIPS/DISCRETE FEATURES b?E D QUICK REFERENCE DATA • SMD envelope SYMBOL • High speed vH continuous reverse
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QQ5H351
BAS216
BAS216
00BM325
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smd diode code pj
Abstract: smd diode code pj 50 Diode smd code PJ GD243 smd diode code pj 65 smd diode pj smd diode code a6 smd marking code pJ marking code diode EC SMD smd diode a6
Text: bhSaTai 002M321 TSa Philips S em iconductors IAPX Prelim inary specification Silicon planar epitaxial high-speed switching diode BAS216 N AMER P H I L I P S / D I S C R E T E FEATURES b7E J> QUICK REFERENCE DATA • SMD envelope SYMBOL • High speed v H continuous reverse
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002M321
BAS216
BAS216
tbS3T31
smd diode code pj
smd diode code pj 50
Diode smd code PJ
GD243
smd diode code pj 65
smd diode pj
smd diode code a6
smd marking code pJ
marking code diode EC SMD
smd diode a6
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bRE D • bb53R31 ODEbTflS 346 W A P X Philips Semiconductors Product specification Silicon planar epitaxial high-speed double diode FEATURES • Plastic SMD envelope • High switching speed • General application. BAV70W QUICK REFERENCE DATA
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bb53R31
BAV70W
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bRE T> bb53R31 DD2bR44 &E5 HAPX Philips Semiconductors Product specification Silicon planar epitaxial BAL74W high-speed diode FEATURES QUICK REFERENCE DATA • Plastic SMD envelope SYMBOL • High switching speed Vr MAX. UNIT continuous reverse
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bb53R31
DD2bR44
BAL74W
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bb53R31 QDEb^Sb S47 H A P X bRE D Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode FEATURES • Plastic SMD envelope • High switching speed BAS16W QUICK REFERENCE DATA SYMBOL MAX. UNIT continuous reverse
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bb53R31
BAS16W
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bRE J> bbSBRBl QQEbRSD 02R • APX Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode FEATURES • Plastic SMD envelope • High switching speed BAL99W QUICK REFERENCE DATA SYMBOL Epitaxial high-speed switching diode
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BAL99W
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