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    "MC 150" TRANSISTOR Search Results

    "MC 150" TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    "MC 150" TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    aaf marking sot23-5

    Abstract: MCP73832 MCP7383X-2 MCP73831 "Charge Management Controller" marking code e2 sot23-5 DS21984B MCP7383X-5 SOT23 marking code AAR
    Text: MCP73831/2 Miniature Single-Cell, Fully Integrated Li-Ion, Li-Polymer Charge Management Controllers Features: Description: • Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Reverse Discharge Protection • High Accuracy Preset Voltage Regulation: + 0.75%


    Original     		PDF MCP73831/2 MCP73831 MCP73832 MCP73831/2 DS21984B-page aaf marking sot23-5 MCP73832 MCP7383X-2 MCP73831 "Charge Management Controller" marking code e2 sot23-5 DS21984B MCP7383X-5 SOT23 marking code AAR

    EE16

    Abstract: sanyo ni-cd ee-16 core EE16 pulse trans EE16 9V EE16 4 3 EE16 5V
    Text: Ordering number:ENN538E NPN Epitaxial Planar Silicon Transistor 2SD826 20V/5A Switching Applications Features Package Dimensions • Low saturation voltage. · High hFE. · Large current capacity. unit:mm 2009B [2SD826] 8.0 2.7 1.5 7.0 3.0 11.0 4.0 3.0 1.6


    Original     		PDF ENN538E 2SD826 2009B 2SD826] 100ms, O-126 150ctric EE16 sanyo ni-cd ee-16 core EE16 pulse trans EE16 9V EE16 4 3 EE16 5V

    MCP73831T

    Abstract: MCP73831 AAR SOT-23-5 SOT23 marking code AAR MCP7383X marking aag MCP7383X-2 2ATI MCP73832 MCP73831T-2ATI
    Text: MCP73831/2 Miniature Single-Cell, Fully Integrated Li-Ion, Li-Polymer Charge Management Controllers Features Description: • Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Reverse Discharge Protection • High Accuracy Preset Voltage Regulation: + 0.75%


    Original     		PDF MCP73831/2 MCP73831 MCP73832 DS21984E-page MCP73831T MCP73831 AAR SOT-23-5 SOT23 marking code AAR MCP7383X marking aag MCP7383X-2 2ATI MCP73832 MCP73831T-2ATI

    SOT23 marking code AAR

    Abstract: MCP73831 MCP73832 aaf marking sot23-5 microchip application notes MP3 MCP7383X 2ati
    Text: MCP73831/2 Miniature Single-Cell, Fully Integrated Li-Ion, Li-Polymer Charge Management Controllers Features Description: • Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Reverse Discharge Protection • High Accuracy Preset Voltage Regulation: + 0.75%


    Original     		PDF MCP73831/2 MCP73831 MCP73832 DS21984D-page SOT23 marking code AAR MCP73831 MCP73832 aaf marking sot23-5 microchip application notes MP3 MCP7383X 2ati

    Untitled

    Abstract: No abstract text available
    Text: MCP73831/2 Miniature Single-Cell, Fully Integrated Li-Ion, Li-Polymer Charge Management Controllers Features Description: • Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Reverse Discharge Protection • High Accuracy Preset Voltage Regulation: +0.75%


    Original     		PDF MCP73831/2 MCP73831 MCP73832 DS21984E-page

    3DG 130

    Abstract: MCP73832 MCP7383X MCP73831 MCP73831T aae sot-23 marking JC51-7 AAK marking code
    Text: MCP73831/2 Miniature Single-Cell, Fully Integrated Li-Ion, Li-Polymer Charge Management Controllers Features Description: • Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Reverse Discharge Protection • High Accuracy Preset Voltage Regulation: + 0.75%


    Original     		PDF MCP73831/2 MCP73831 MCP73832 DS21984C-page 3DG 130 MCP73832 MCP7383X MCP73831 MCP73831T aae sot-23 marking JC51-7 AAK marking code

    EE16

    Abstract: 5A transistor 2SD826 DC-DC EE13 ITR09924 core EE16 60309E EE16 9V transistor C 5386 EE16 case
    Text: 2SD826 Ordering number : EN538F SANYO Semiconductors DATA SHEET 2SD826 NPN Epitaxial Planar Silicon Transistor 20V / 5A, Transistor for Flash Circuit Features • • • Low saturation voltage. High hFE. Large current capacity. Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF 2SD826 EN538F 100ms, 150se. EE16 5A transistor 2SD826 DC-DC EE13 ITR09924 core EE16 60309E EE16 9V transistor C 5386 EE16 case

    Untitled

    Abstract: No abstract text available
    Text: MCP73831/2 Miniature Single-Cell, Fully Integrated Li-Ion, Li-Polymer Charge Management Controllers Features: Description: • Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Reverse Discharge Protection • High Accuracy Preset Voltage Regulation: + 0.75%


    Original     		PDF MCP73831/2 MCP73831 MCP73832 Pack60-4-227-8870

    Untitled

    Abstract: No abstract text available
    Text: MCP73831/2 Miniature Single-Cell, Fully Integrated Li-Ion, Li-Polymer Charge Management Controllers Features Description: • Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Reverse Discharge Protection • High Accuracy Preset Voltage Regulation: + 0.75%


    Original     		PDF MCP73831/2 MCP73831 MCP73832 DS20001984F-page

    Battery Management

    Abstract: MCP73831-2
    Text: MCP73831/2 Miniature Single-Cell, Fully Integrated Li-Ion, Li-Polymer Charge Management Controllers Features Description: • Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Reverse Discharge Protection • High Accuracy Preset Voltage Regulation: + 0.75%


    Original     		PDF MCP73831/2 MCP73831 MCP73832 DS20001984F-page Battery Management MCP73831-2

    MCP73831

    Abstract: aaf marking sot23-5 aae DFN marking MCP73831T Li-ion charger controller sot23-5 MCP73831-4 C04 SOT23 MCP73831T-5ACI/MC mosfet 4433 AAK marking code
    Text: MCP73831 Miniature Single Cell, Fully Integrated Li-Ion, Li-Polymer Charge Management Controller Features: Description: • Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Reverse Discharge Protection • High Accuracy Preset Voltage Regulation: + 0.75%


    Original     		PDF MCP73831 MCP73831 DS21984A-page aaf marking sot23-5 aae DFN marking MCP73831T Li-ion charger controller sot23-5 MCP73831-4 C04 SOT23 MCP73831T-5ACI/MC mosfet 4433 AAK marking code

    AD2010

    Abstract: field-effect transistors AD2009 3PD24 AD2007
    Text: Product Specification Type Number : MT MC 8 E 2 A0 L B F *1 Type Application Structure Outline Absolute Maximum Ratings Prepared by Checked by M.Hamada T.Tanida Sheet No.1/3 Applied Established by by H.Shidooka Silicon Field Effect Transistors Li-ion Battery


    Original     		PDF AD2007 AD2008 AD2009 AD2010 AD2010 field-effect transistors AD2009 3PD24 AD2007

    AD2010

    Abstract: AD2009 AD2006 AD2007 marking code AE -transformer BZV49-C51
    Text: 㪪㪿㪼㪼㫋㩷㪥㫆㪅㪈㩷㪆㩷㪊 Product Specification Type Number : MT MC 8 E 2 8 0 L B F Prepared by Checked by Applied by S.Miyata M.Fujisawa H.Shidooka *2 Type Application Structure Outline Absolute Maximum Ratings Item Silicon Field Effect Transistors


    Original     		PDF AD2006 AD2007 AD2008 AD2009 AD2010 AD2010 AD2009 AD2006 AD2007 marking code AE -transformer BZV49-C51

    ntcthermistor

    Abstract: V23990-P503-F tyco igbt module 35A tyco igbt module ntc-thermistor Fast Recovery Bridge Rectifier, 35A, 600V ntcthermistor 1 ntc-widerstand transistor 390 P502
    Text: Targetdatasheet P500 fast PACK 0 H Version 05/02 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung


    Original     		PDF -100A/ms -200A/ms D-81359 ntcthermistor V23990-P503-F tyco igbt module 35A tyco igbt module ntc-thermistor Fast Recovery Bridge Rectifier, 35A, 600V ntcthermistor 1 ntc-widerstand transistor 390 P502

    5401 transistor

    Abstract: 2n5401TRANSISTOR 2N 5401
    Text: MC C TO-92 Plastic-Encapsulate Transistors X 1 2N 5401 TRANSISTOR PNP FEATURES P cm; Ic m ; 0.625W (Tamb=25°C) -0.6 A tage V(BR)CB0: -1 6 0 V storage junction temperature range Tj.Tstg: ELECTRICAL -55°C to + 150°C C »4A R AC T E R I ST I C S (Tam b=25°C u n le s s o th e rw is e


    OCR Scan     		PDF 2N5401 5401 transistor 2n5401TRANSISTOR 2N 5401

    "Frequency Tripler"

    Abstract: 40647 Tripler noval socket philips 9 pin Frequency tripler
    Text: PHILIPS QQC03/14 QUICK HEATING DOUBLE TETRODE for use as output tube, frequency multiplier or modulator. The tube has been designed for intermittent filament service in transistorized mobile equipment FILAMENT: oxide coated HEATING: direct; parallel supply


    OCR Scan     		PDF QQC03/14 "Frequency Tripler" 40647 Tripler noval socket philips 9 pin Frequency tripler

    BF225

    Abstract: 2n3984 2N2539 TI-407 2N4255 N4254 TI407 TIS37 2N2538 2N4254
    Text: Silicon Transistors Case Type No. c^ o T' Maximum Ratings at 25°C amb. C haracteristics SPEC IAL FEATURES 11 = 1“ o CJ ,-V CB V V Ce V V EB V •c A Ptot W !c mA hpE h A - 1 r- *- •, Min. Max. Min. ■c mA M c/s ^CE SAT


    OCR Scan     		PDF 2N915 2N916 2N918 2N2865 2S102 2S103 2S104 2S731 2N2540 2N2883 BF225 2n3984 2N2539 TI-407 2N4255 N4254 TI407 TIS37 2N2538 2N4254

    Untitled

    Abstract: No abstract text available
    Text: : 8368602 SOLITRON¡ DEVICES INC^Ì DF|fl3fc,fit,05 DDDiatl 2 f - ENGINEERING DEVICE SPECIFICATION T W NO. 6079/2N2698 SILICON TRANSISTOR GENERAL DESCRIPTION This device is an NPN Triple Diffused Planar Power Transistor packaged in an HD case, designed primarily for switching applications


    OCR Scan     		PDF bfltl02 0DD12ti 6079/2N2698 12/26/6DRWN. 6079/2N269B f-23-63-K-44 12/26/62DRWN.

    tca150c

    Abstract: 1j99 SOLITRON
    Text: S O L I IR ON ÜLVILLÜ INC bl l ' v a _o_i »E|fl3t.aL0E ODOISST 4 ENGINEERING DEVICE SPECIFICATION NO. 6079/2N2697 SILICON TRANSISTOR GENERAL DESCRIPTION This device JLa an NPN Triple Diffused Planar Power Transistor packaged in an HD case, designed primarily for switching applications


    OCR Scan     		PDF 6079/2N2697 hF68602 DATEL2/26/62 tca150c 1j99 SOLITRON

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Text: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


    OCR Scan     		PDF TDA1510 TDA1510A logos 4012B 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485

    Untitled

    Abstract: No abstract text available
    Text: M E C L II M C 1000/1200 series D U A L 4 -5 IN P U T EXPANDERS MC1025 MCI 225 D ual expander arrays, with a 4-transistor array isolated from a 5transistor array. T he collectors and emitters from both arrays m ay be connected to form a 9-transistor array. W ith each base available, a 4,


    OCR Scan     		PDF MC1025 20-input 40-input 1024/MC C102S/M C1225

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H I LIPS/DISCRETE QbE D PowerMOS transistor • bbSBTBl 0014737 4 ■ BUZ384 T - V 1 'I Z May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is


    OCR Scan     		PDF BUZ384 bbS3i31 00147T0 BUZ384 T-39-13 bb53T31 bb53T31 Q0147TS

    BC846A

    Abstract: BC846B BC847A BC847B BC847C BC848A BC848B BC848C
    Text: TRANSYS BC846A - BC848C ELECTRONICS NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR LIMITED Features Epitaxial Die Construction Ideally Suited for Automatic Insertion 310 mW Power Dissipation Complementary PNP Types Available BC856-BC858 For Switching and AF Amplifier Applications


    OCR Scan     		PDF BC846A BC848C BC856-BC858) OT-23, MIL-STD-202, BC847C BC846B BC848A BC847A BC847B BC848B BC848C

    2SC4872

    Abstract: 2sc4870
    Text: s m m NEW PRODUCT VERY HIGH-FREQUENCY TRANSISTOR SERIES 1.2 Newly developed SANYO very high-frequency transistors can be used for various applications such as for communication equipment and measuring equipment. They are superior when used with low voltage drive.


    OCR Scan     		PDF 2SC4853 2SC4854 2SC4855) 2SC4856 2SC4857, 2SC4858, 2SC4859) 2SC4860 2SC4861, 254MHi 2SC4872 2sc4870