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    "DUAL TRANSISTORS" RESIST Search Results

    "DUAL TRANSISTORS" RESIST Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    "DUAL TRANSISTORS" RESIST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UH11K Preliminary NPN EPITAXIAL SILICON TRANSISTOR DUAL BIAS RESISTOR TRANSISTORS  DESCRIPTION The UTC UH11K is a dual bias resistor transistors, it uses UTC’s advanced technology to provide customers with saving board space,


    Original     		PDF UH11K UH11K UH11KL-AL6-R UH11KG-AL6-R OT-363 QW-R218-027

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UH11K Preliminary NPN EPITAXIAL SILICON TRANSISTOR DUAL BIAS RESISTOR TRANSISTORS  DESCRIPTION The UTC UH11K is a dual bias resistor transistors, it uses UTC’s advanced technology to provide customers with saving board space,


    Original     		PDF UH11K UH11K UH11KG-AL6-R OT-363 QW-R218-027

    2907A PNP bipolar transistors

    Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF O-92d 2907A PNP bipolar transistors BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846

    transistors BC 543

    Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF OT-23 OT-363 OT-143 transistors BC 543 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5

    sot553

    Abstract: EMG5
    Text: EMG2DXV5T1, EMG5DXV5T1 Preferred Devices Product Preview Dual Bias Resistor Transistors http://onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single


    Original     		PDF OT-553 OT-553 sot553 EMG5

    EMG5

    Abstract: No abstract text available
    Text: EMG2DXV5T1, EMG5DXV5T1 Preferred Devices Product Preview Dual Bias Resistor Transistors http://onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single


    Original     		PDF OT-553 EMG5

    common emitter transistors

    Abstract: A144E a144* transistor DTA144E UMA2N FMA2A
    Text: Transistors Emitter common dual digital transistors UMA2N / FMA2A FFeatures 1) Two DTA144E transistors in a single UMT and a SMT package. 2) Mounting cost and area can be cut in half. FExternal dimensions (Units:mm) FStructure Dual PNP digital transistor (each with


    Original     		PDF DTA144E SPEC-A144E) common emitter transistors A144E a144* transistor UMA2N FMA2A

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UD2H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS „ DESCRIPTION The UTC UD2H are Dual Digital Transistors including a NPN transistor and a PNP transistor. The transistor elements are independent to eliminate interference.


    Original     		PDF OT-26 QW-R218-018

    100MHZ

    Abstract: DTA144E T148
    Text: EMA2 / UMA2N / FMA2A Transistors Emitter common dual digital transistors EMA2 / UMA2N / FMA2A zExternal dimensions (Unit : mm) (3) (4) (2) (5) 1.2 1.6 (1) 0.5 0.13 zStructure Dual PNP silicon transistor (each with two built in resistors) 0.5 0.5 1.0 1.6


    Original     		PDF DTA144E 100MHZ T148

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UD3H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS „ DESCRIPTION 6 The UTC UD3H is Dual Digital Transistors including a NPN transistor and a PNP transistor. The transistor elements are independent to eliminate, interference.


    Original     		PDF OT-26 QW-R218-020

    NPN general purpose silicon transistors

    Abstract: Transistors General UMZ1N transistor 526 c114e 2SC411K transistors C124E dual npn 500ma 581 PNP
    Text: Transistors FMC6A IMD1A 94S-830-AC115E (96-458-AC124T) 575 Transistors IMD10A (96-555-IMD10) 582 Transistors IMD16A (96-473-IMD16) 583 Transistors IMD8A IMD9A (94S-902-AC144T) (94S-904-AC114Y) 581 Transistors General purpose transistor (dual transistors)


    Original     		PDF 94S-830-AC115E) 96-458-AC124T) IMD10A 96-555-IMD10) IMD16A 96-473-IMD16) 94S-902-AC144T) 94S-904-AC114Y) 2SA1036K 2SC411K NPN general purpose silicon transistors Transistors General UMZ1N transistor 526 c114e transistors C124E dual npn 500ma 581 PNP

    Untitled

    Abstract: No abstract text available
    Text: EMB3 / UMB3N / IMB3A Transistors General purpose dual digital transistors EMB3 / UMB3N / IMB3A zExternal dimensions (Unit : mm) 0.65 (1) 2.0 1.3 (3) (2) (4) (5) (6) 0.2 1.25 0.7 0to0.1 0.9 2.1 0.1Min. zStructure Dual PNP digital transistor (each with single built in resistor)


    Original     		PDF DTA143T SC-88

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital transistors built-in resistors EMH10 SOT-563 General purpose transistors (dual transistors) FEATURES z Two DTC123J chips in a package z Mounting possible with SOT-563 automatic mounting machines.


    Original     		PDF EMH10 OT-563 DTC123J OT-563 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital transistors built-in resistors EMH10 SOT-563 General purpose transistors (dual transistors) FEATURES z Two DTC123J chips in a package. z Mounting possible with SOT-563 automatic mounting machines.


    Original     		PDF EMH10 OT-563 DTC123J OT-563 100MHz

    sot 563 package

    Abstract: No abstract text available
    Text: MUN5135DW1, NSBA123JDXV6, NSBA123JDP6 Dual PNP Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW http://onsemi.com PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network 3 This series of digital transistors is designed to replace a single


    Original     		PDF MUN5135DW1, NSBA123JDXV6, NSBA123JDP6 DTA123JD/D sot 563 package

    16pin pwm

    Abstract: TB6561NG SDIP-24-300-1
    Text: TB6561NG Preliminary TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB6561NG Dual Full-Bridge Driver IC The TB6561NG is a dual bridge driver IC for DC brush motor that contains MOS transistors in an output stage. By using low ON-resistance MOS transistors and PWM current


    Original     		PDF TB6561NG TB6561NG SDIP-24--300-1 16pin pwm SDIP-24-300-1

    TB6561NG

    Abstract: No abstract text available
    Text: TB6561NG Preliminary TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB6561NG Dual Full-Bridge Driver IC The TB6561NG is a dual bridge driver IC for DC brush motor that contains MOS transistors in an output stage. By using low ON-resistance MOS transistors and PWM current


    Original     		PDF TB6561NG TB6561NG SDIP-24--300-1

    Untitled

    Abstract: No abstract text available
    Text: MUN5132DW1, NSBA143EDXV6, NSBA143EDP6 Dual PNP Bias Resistor Transistors R1 = 4.7 kW, R2 = 4.7 kW http://onsemi.com PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network 3 This series of digital transistors is designed to replace a single


    Original     		PDF MUN5132DW1, NSBA143EDXV6, NSBA143EDP6 DTA143ED/D

    C144* transistor

    Abstract: C144E transistor C144* datasheet C144E DTC144E
    Text: Transistors Emitter common dual digital transistors UMG2N / FMG2A FFeatures 1) Two DTC144E chips in a UMT or SMT package. 2) Mounting cost and area can be cut in half. FExternal dimensions (Units: mm) FStructure Dual NPN digital transistor (each with two built in resistors)


    Original     		PDF DTC144E 96-409-C144E) C144* transistor C144E transistor C144* datasheet C144E

    C143* datasheet

    Abstract: 538 NPN transistor c143t C143 DTC143T
    Text: Transistors Emitter common dual digital transistors UMG3N / FMG3A FFeatures 1) Two DTC143T chips in a UMT or SMT package. 2) Mounting cost and area can be cut in half. FExternal dimensions (Units: mm) FStructure Dual NPN digital transistor (each with single built in resistor)


    Original     		PDF DTC143T 96-411-C143T) C143* datasheet 538 NPN transistor c143t C143

    Untitled

    Abstract: No abstract text available
    Text: MUN5133DW1, NSBA143ZDXV6, NSBA143ZDP6 Dual PNP Bias Resistor Transistors R1 = 4.7 kW, R2 = 47 kW http://onsemi.com PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network 3 This series of digital transistors is designed to replace a single


    Original     		PDF MUN5133DW1, NSBA143ZDXV6, NSBA143ZDP6 DTA143ZD/D

    MFE3020

    Abstract: MFE3021
    Text: MFE3020 silicon MFE3021 DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS (Type C) Enhancement Mode (Type C| MOS Field-Effect Transistors de­ signed primarily for low power, chopper or switching applications. Low Reverse Gate Current —


    OCR Scan     		PDF MFE3020 MFE3021 MFE3021) MFE3020 MFE3021

    MD3762

    Abstract: MD3762F MQ3762 rfl3
    Text: MD3762 silicon MD3762F MQ3762 PNP SILICON DUAL TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, and temperature compensation amplifiers. • Collector-Emitter Breakdown Voltage —


    OCR Scan     		PDF MD3762 MD3762F MQ3762 MD3762 MQ3762 rfl3

    diode S6 78A

    Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
    Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14


    OCR Scan     		PDF O-92tl O-92d diode S6 78A TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor