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    "COMMON DRAIN" AMPLIFIER IMPEDANCE MATCHING PAIR Search Results

    "COMMON DRAIN" AMPLIFIER IMPEDANCE MATCHING PAIR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    SSM10N961L Toshiba Electronic Devices & Storage Corporation N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH011BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type Visit Toshiba Electronic Devices & Storage Corporation

    "COMMON DRAIN" AMPLIFIER IMPEDANCE MATCHING PAIR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    power amplifier mosfet up to 50mhz

    Abstract: APT9702 5961007601 40.68mhz ARF446 ARF448A ARF448 equivalent hf class AB power amplifier mosfet lumped ARF448
    Text: APPLICATION NOTE APT 9702 A 50 MHZ, 250W AMPLIFIER USING PUSH-PULL ARF448A/B 1 A 50 MHZ, 250W AMPLIFIER USING PUSH-PULL ARF448A/B Richard Frey, P.E. Senior Applications Engineer Advanced Power Technology, Inc., Bend, Oregon ABSTRACT Frequency: Gain Output power


    Original     		PDF ARF448A/B 50MHz. 100MHz. power amplifier mosfet up to 50mhz APT9702 5961007601 40.68mhz ARF446 ARF448A ARF448 equivalent hf class AB power amplifier mosfet lumped ARF448

    1000w power amplifier circuit diagram

    Abstract: 800w power amplifier circuit diagram 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 500 watt mosfet power amplifier circuit diagram 27.12MHz power amplifier APT9701 1000 watt ferrite transformer ar164 hf 800w power Amplifier diagram
    Text: APPLICATION NOTE APT9701 Low Cost 1000 Watt 300 Volt RF Power Amplifier for 27.12MHz 1 Low Cost 1000 Watt 300 Volt RF Power Amplifier for 27.12MHz Richard Frey, P.E., RF Applications Engineering, Advanced Power Technology Inc, Bend, OR ABSTRACT directly to a single stage PFC regulated power supply


    Original     		PDF APT9701 12MHz O-247 300VDC AN749, DL110, 1000w power amplifier circuit diagram 800w power amplifier circuit diagram 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 500 watt mosfet power amplifier circuit diagram 27.12MHz power amplifier APT9701 1000 watt ferrite transformer ar164 hf 800w power Amplifier diagram

    9702a

    Abstract: ARF448A ARF448 power amplifier mosfet up to 50mhz ARF460 ARF446 Lumped 40.68mhz ARF448 equivalent wound bifilar
    Text: APPLICATION NOTE APT 9702a A 50 MHZ, 250W AMPLIFIER USING PUSH-PULL ARF448A/B 1 A 50 MHZ, 250W AMPLIFIER USING PUSH-PULL ARF448A/B Richard Frey, P.E. Senior Applications Engineer Advanced Power Technology, Inc., Bend, Oregon ABSTRACT Frequency: Gain Output power


    Original     		PDF 9702a ARF448A/B 50MHz. 100MHz. 9702a ARF448A ARF448 power amplifier mosfet up to 50mhz ARF460 ARF446 Lumped 40.68mhz ARF448 equivalent wound bifilar

    smd diode J476

    Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3
    Text: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		PDF DL110/D smd diode J476 VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3

    500w power amplifier circuit diagram

    Abstract: HEXFET Power MOSFET designer manual PCIM 177 APT9302 Transistor C538 200w power amplifier PCB layout 500 watt mosfet power amplifier circuit diagram 400w power amplifier PCB layout 500w hf power amplifier circuit diagram F624-19Q1
    Text: APPLICATION NOTE APT9501 By: Kenneth Dierberger Bobby McDonald Lee B. Max A High-Efficiency 400 Watt 13.56 MHz RF Power Amplifier Presented at RF EXPO WEST 1995 1 A High-Efficiency 400 Watt 13.56 MHz RF Power Amplifier Kenneth Dierberger Applications Engineering Manager


    Original     		PDF APT9501 400Watt, 56MHz 100VDC F-33700 500w power amplifier circuit diagram HEXFET Power MOSFET designer manual PCIM 177 APT9302 Transistor C538 200w power amplifier PCB layout 500 watt mosfet power amplifier circuit diagram 400w power amplifier PCB layout 500w hf power amplifier circuit diagram F624-19Q1

    Amplifier Research rf power amplifier schematic

    Abstract: design of multi section directional coupler Spiral Inductor technology 10 ghz driver amplifier mmic distributed amplifier c-band 50 Watt power amplifier c-Band mmic core chip pin diode limiter 3 ghz 1 watt directional coupler chip 8 GHz
    Text: TECHNICAL FEATURE HIGH PERFORMANCE WIDEBAND MSAG GAIN BLOCK/DRIVER AMPLIFIER MMICS USING MLP TECHNOLOGY The multi-level plating MLP process has been used to develop a family of wideband, low noise, generic gain block and driver amplifier MMICs operating


    Original     		PDF

    APT9801

    Abstract: ARCO 465 Compression Trimmer Capacitor arco mica trimmer amplifier circuit diagram ARF449A 2020N102J501P arf449 Noble trimmer ARF449B 250 watt amplifier
    Text: APPLICATION NOTE APT9801 By: Richard Frey, P.E. A Push-Pull 300 Watt Amplifier for 81.36 MHz Reprinted from the April 1998 issue of Applied Microwave and Wireless Magazine courtesy of Noble Publishing Crporation Power Amplifier A Push-Pull 300-watt Amplifier


    Original     		PDF APT9801 300-watt O-247 APT9801 ARCO 465 Compression Trimmer Capacitor arco mica trimmer amplifier circuit diagram ARF449A 2020N102J501P arf449 Noble trimmer ARF449B 250 watt amplifier

    2a258 transistor

    Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
    Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		PDF DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index

    APT9903

    Abstract: RF Amplifier 500w 175 mhz schematic rf Power supply 500w plasma Class E amplifier n-channel 500w RF power mosfet RF Amplifier 500w class E power amplifier 13.56 FERRITE TRANSFORMER 500W spice model ARF448A ARF448A
    Text: APPLICATION NOTE By: APT9903 Richard Frey, P.E. 500W, CLASS E 27.12 MHz AMPLIFIER USING A SINGLE PLASTIC MOSFET 1 APT9903 500W, Class E 27.12 MHz Amplifier Using A Single Plastic MOSFET Richard Frey, P.E. Advanced Power Technology, Inc. Bend, Oregon 97702 USA


    Original     		PDF APT9903 O-247 APT9903 RF Amplifier 500w 175 mhz schematic rf Power supply 500w plasma Class E amplifier n-channel 500w RF power mosfet RF Amplifier 500w class E power amplifier 13.56 FERRITE TRANSFORMER 500W spice model ARF448A ARF448A

    NTC 220-11

    Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


    Original     		PDF transisto25-735. NTC 220-11 PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide

    ferroxcube 4C6 toroid core

    Abstract: philips 4b1 ferrite rod Philips Application Note ECO6907 philips toroid 4c6 4C6 toroid philips ferroxcube 4c6 Design of H.F. Wideband Power Transformers Philips Components, Soft Ferrites Data Handbook M Data Handbook MA01 ECO7703
    Text: APPLICATION NOTE A wideband 30 W push-pull amplifier with two MOS transistors BLF244 VDS = 28 V ; range 25 − 110 MHz NCO8701 Philips Semiconductors A wideband 30 W push-pull amplifier with two MOS Application Note transistors BLF244 (VDS = 28 V); range 25 − 110 MHz


    Original     		PDF BLF244 NCO8701 SCA57 ferroxcube 4C6 toroid core philips 4b1 ferrite rod Philips Application Note ECO6907 philips toroid 4c6 4C6 toroid philips ferroxcube 4c6 Design of H.F. Wideband Power Transformers Philips Components, Soft Ferrites Data Handbook M Data Handbook MA01 ECO7703

    Calex

    Abstract: 176J 176L
    Text: Model 176 and 178 DC Amplifiers Features* ! Drifts to <0.25µV/°C ! Input Impedance >100 MΩ ! CMR: 120 dB @ G = 1000 ! Gain Linearity of ±.005% *The key features of this amplifier series, listed above, do not necessarily apply to all units. Please check individual unit


    Original     		PDF 176/MK276 MK276 178/MK278 MK278 Calex 176J 176L

    Calex

    Abstract: No abstract text available
    Text: Models 176 & 178 DC Differential Amplifiers Features* Description n Drifts to <0.25µV/°C n Input Impedance >100 MΩ n CMR: 120 dB @ G = 1000 n Gain Linearity of ±.005% The 176 all versions and the 178 are general purpose differential input DC amplifiers. The best all-around unit is the


    Original     		PDF 176/MK276 MK276 178/MK278 MK278 Calex

    amidon 43 toroid core

    Abstract: amidon toroid core balun APT9702 hf wide band class AB power amplifier mosfet FERRITE TRANSFORMER 500W APT9802 amidon toroid core HF Amplifier 300w hf amplifier for transformer 1000 watt ferrite transformer
    Text: APPLICATION NOTE APT9802 By: Richard Frey, P.E. A 300W MOSFET Linear Amplifier for 50 MHz Reprinted from the May/June 1999 Issue of QEX Magazine Courtesy of ARRL, Inc. A 300W MOSFET Linear Amplifier for 50 MHz Richard Frey, Sr. Applications Engineer, Advanced Power Technology, Inc., Bend, Oregon USA


    Original     		PDF APT9802 ARF448A/B amidon 43 toroid core amidon toroid core balun APT9702 hf wide band class AB power amplifier mosfet FERRITE TRANSFORMER 500W APT9802 amidon toroid core HF Amplifier 300w hf amplifier for transformer 1000 watt ferrite transformer

    vector modulator

    Abstract: class B push pull power amplifier LDMOS push pull LDMOS transistor 1W 180 degree hybrid class A push pull power amplifier RF push pull power amplifier SURFACE MOUNT rf TRANSFORMER USE OF TRANSISTOR AN136
    Text: Using Intersil Digitally Controlled Potentiometers in Commercial RF Power Amplifier Applications Application Note May 5, 2005 AN136.0 Author: Gareth Lloyd Introduction FIGURE 1. In the past, design techniques for setting bias conditions on RF power amplifiers required the use of either an unreliable


    Original     		PDF AN136 vector modulator class B push pull power amplifier LDMOS push pull LDMOS transistor 1W 180 degree hybrid class A push pull power amplifier RF push pull power amplifier SURFACE MOUNT rf TRANSFORMER USE OF TRANSISTOR

    AN1365

    Abstract: AN136 LMC6064 X9250 X9418 power combiner broadband transformers wideband linear amplifier XICO
    Text: Application Note AN136 Using Xicor Digitally Controlled Potentiometers in Commercial RF Power Amplifier Applications P Gareth Lloyd, pglloyd@elab-ltd.co.uk Efficient, Linear & Broadband Ltd., Warrington Business Park, Long Lane, Warrington, Cheshire. WA2 8TX, U.K.


    Original     		PDF AN136 X9258T= AN136-6 AN1365 AN136 LMC6064 X9250 X9418 power combiner broadband transformers wideband linear amplifier XICO

    Current to voltage Converter 4-20mA using LM324

    Abstract: Voltage to Current Converter 4-20mA using LM324 jfet cascode XTR101 Voltage to Current Converter 4-20mA LM324 XTR110 comparator 7445 PDS-555 REF200 INA117
    Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132


    Original     		PDF REF200 Current to voltage Converter 4-20mA using LM324 Voltage to Current Converter 4-20mA using LM324 jfet cascode XTR101 Voltage to Current Converter 4-20mA LM324 XTR110 comparator 7445 PDS-555 INA117

    National "Audio Handbook"

    Abstract: PF5102 2N4250 strain gauge amplifier National LM194 LM394 AN-222 LM118 Cold-Junction
    Text: National Semiconductor Application Note 222 July 1979 Matched bipolar transistor pairs are a very powerful design tool, yet have received less and less attention over the last few years. This is primarily due to the proliferation of high-performance monolithic circuits which are replacing


    Original     		PDF LM194 absolute959 National "Audio Handbook" PF5102 2N4250 strain gauge amplifier National LM394 AN-222 LM118 Cold-Junction

    apt449a

    Abstract: APT9701 APT9702 hf class AB power amplifier mosfet uhf 200w mosfet mosfet HF amplifier APT9801 200W PUSH-PULL what is the drawback of operating system HF Amplifier 200w
    Text: Technical Brief APTB 981 Capabilities of Low-cost High Voltage RF Power MOSFETs at HF and VHF Richard Frey, P.E. Advanced Power Technology Inc. 405 SW Columbia St., Bend, Oregon, 97702 ABSTRACT Plastic power MOSFET transistors have found increasing acceptance in all fields of power electronic applications


    Original     		PDF APT9701. ARF448A/B, APT9702. ARF449A/B APT9801. apt449a APT9701 APT9702 hf class AB power amplifier mosfet uhf 200w mosfet mosfet HF amplifier APT9801 200W PUSH-PULL what is the drawback of operating system HF Amplifier 200w

    planar transformer theory

    Abstract: TH D560 AN721 18006-1-Q1 AN215A mosfet HF amplifier motorola diode 8296 1N4740 319B AN211A
    Text: Order this document by MRF136Y/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF136Y N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration.


    Original     		PDF MRF136Y/D MRF136Y planar transformer theory TH D560 AN721 18006-1-Q1 AN215A mosfet HF amplifier motorola diode 8296 1N4740 319B AN211A

    136y

    Abstract: 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F136 M R F 136Y The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N -Channel E nhancem ent-M ode MOSFETs 15 W, 30 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . designed for wideband large-signal amplifier and oscillator applications up


    OCR Scan     		PDF MRF136 MRF136Y MRF136Y AN215A DL110 136y 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068

    2865002402

    Abstract: 6435 fet MRF136
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistors MRF136 M RF136Y N -C hannel Enhancem ent-M ode MOSFETs . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push-pull configuration.


    OCR Scan     		PDF RF136 RF136Y MRF136 MRF136Y AN215A DL110 2865002402 6435 fet

    motorola MRF136

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistors MRF136 M RF136Y N-Channel Enhancem ent-M ode MOSFETs . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push-pull configuration.


    OCR Scan     		PDF RF136 MRF136Y MRF136 RF136Y MRF136Y AN215A. motorola MRF136

    Untitled

    Abstract: No abstract text available
    Text: Models 176 and 178 Features* • Drifts to <0.25|jV/oC ■ Input Impedance >100 M£2 ■ CMR: 120 dB @ G = 1000 ■ Gain Linearity of ±.005% *The key features of this amplifier series, listed above, do not necessarily apply to all units. Please check individual unit


    OCR Scan     		PDF 176/M MK276 MK278