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    "CMOS GATE ARRAY" FUJI Search Results

    "CMOS GATE ARRAY" FUJI Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DFE2016CKA-1R0M=P2 Murata Manufacturing Co Ltd Fixed IND 1uH 1800mA NONAUTO Visit Murata Manufacturing Co Ltd
    LQW18CN55NJ0HD Murata Manufacturing Co Ltd Fixed IND 55nH 1500mA POWRTRN Visit Murata Manufacturing Co Ltd
    LQW18CNR56J0HD Murata Manufacturing Co Ltd Fixed IND 560nH 450mA POWRTRN Visit Murata Manufacturing Co Ltd
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    DFE322520F-2R2M=P2 Murata Manufacturing Co Ltd Fixed IND 2.2uH 4400mA NONAUTO Visit Murata Manufacturing Co Ltd

    "CMOS GATE ARRAY" FUJI Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    74LS382

    Abstract: C1602A C350AVB 74LS08 fan-in 74ls517 74LS556 74LS183 74LS86 full adder MB64H 74LS381
    Text: ix u jD U Lu ra n ctiu F U JIT S U _ mmm CWiOS Gate Array GENERAL INFORMATION The Fujitsu CMOS gate array family consists of twentyeight devlcs types which are fabricated with advanced silicon gate CMOS technology. And more than 14devlc«s are coming. Fujitsu CMOS gate array are configured In a


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    veF178 74LS181 74LS190 F191H 74LS191 74LS192 74LS193 74LS194A 74LS195A 74S260 74LS382 C1602A C350AVB 74LS08 fan-in 74ls517 74LS556 74LS183 74LS86 full adder MB64H 74LS381 PDF

    CG46533

    Abstract: CG46713 CE46F10 CE46F20 CE46F30 CE46F40 CE46F50 CE46F60 CE46F70 BGA-35
    Text: November 1995 Edition 1.5 DATA SHEET CG/CE46 0.65 Micron High Performance, Low Power CMOS Gate Arrays Description The Fujitsu CG46 is a high performance, 0.65 µm drawn channel length, digital CMOS gate array family. The CE46 is a 0.65 µm drawn channel length, digital CMOS embedded gate array


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    CG/CE46 ASIC-DS-20084-11/95 CG46533 CG46713 CE46F10 CE46F20 CE46F30 CE46F40 CE46F50 CE46F60 CE46F70 BGA-35 PDF

    CG46533

    Abstract: . rp 700 pc -24 CG46833 CG46134 SQFP100 CE46F10 CE46F20 CE46F30 CE46F40 CE46F50
    Text: FUJITSU Novem ber 1995 Edition 1.5 DATA SHEET '• CG/CE46 0.65 Micron High Performance, Low Power CMOS Gate Arrays Description The Fujitsu CG46 is a high performance, 0.65 im drawn channel length, digital CMOS gate array family. The CE46 is a 0.65 urn drawn channel length, digital CMOS embedded gate array


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    CG/CE46 CG/CE46 374175b 001173b CG46533 . rp 700 pc -24 CG46833 CG46134 SQFP100 CE46F10 CE46F20 CE46F30 CE46F40 CE46F50 PDF

    CG46713

    Abstract: CG46194 CG46533 CG46134 CG46104
    Text: FUJITSU Novem ber 1995 Edition 1.5 DATA S H E E T : CG/CE46 0.65 Micron High Performance, Low Power CMOS Gate Arrays Description The Fujitsu CG46 is a high performance, 0.65 |im drawn channel length, digital CMOS gate array family. The CE46 is a 0.65 urn drawn channel length, digital CMOS embedded gate array


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    CG/CE46 CG46713 CG46194 CG46533 CG46134 CG46104 PDF

    C350AVB

    Abstract: full adder using Multiplexer IC 74150 74LS382 74ls69 T2D 7N IC 74ls147 pin details 74LS396 MB652xxx 651XX 74LS86 full adder
    Text: FUJITSU MICROELECTRONICS F U JIT S U wmmm 7flC D B 37MT7bH □D03c]4b 3 • JZ CMOS Gate Array GENERAL INFORMATION The Fujitsu CM O S gate array fam ily consists of tw en tyeight device types which are fabricated w ith advanced silicon gate CMOS technology. And more than 14 devices


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    37MT7bH 74LS175 74LS181 74LS183 74LS190 74LS191 74LS192 74LS193 74LS194A 74LS195A C350AVB full adder using Multiplexer IC 74150 74LS382 74ls69 T2D 7N IC 74ls147 pin details 74LS396 MB652xxx 651XX 74LS86 full adder PDF

    DS06-20110-5E

    Abstract: CE81 0.18-um CMOS standard cell library inverter
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20110-5E Semicustom CMOS Embedded array CE81 Series • DESCRIPTION The CE81 series 0.18 µm CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 34 million gates which have a gate delay time of 12 ps, resulting in both integration


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    DS06-20110-5E F0612 DS06-20110-5E CE81 0.18-um CMOS standard cell library inverter PDF

    CE81

    Abstract: floor plan for 4 bit adder 722k
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS06-20110-5Ea Semicustom CMOS Embedded array CE81 Series • DESCRIPTION The CE81 series 0.18 m CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 34 million gates which have a gate delay time of 12 ps, resulting in both integration


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    DS06-20110-5Ea CE81 floor plan for 4 bit adder 722k PDF

    QFP-240

    Abstract: QFP240 CG61304P LQFP100 LQFP120 LQFP144 LQFP176 LQFP48 LQFP64 LQFP80
    Text: New products CG61P CMOS Gate Array CG61P Series This series features the first gate array incorporating an analog PLL. Four frames are available in a capacity range from 70K to 300K: two types are provided for analog PLLs of a low-frequency version 90 to 160 MHz ;


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    CG61P CG61P 48-pin) BCC48 FBGA48 QFP-240 QFP240 CG61304P LQFP100 LQFP120 LQFP144 LQFP176 LQFP48 LQFP64 LQFP80 PDF

    t2d 64

    Abstract: lu1414 fdn 156 MB631XXX LU18 mb633
    Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE AU Series CMOS Gate Arrays DESCRIPTION The AU series of 1.2 Jim CMOS gate arrays, available in eight device types with from 10K to 100K gates, achieves the ultra fast speed of 0.6 ns per gate. Thanks to the channel-free structure of the AU gate array, AU basic cells can be used for logic cells,


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    Untitled

    Abstract: No abstract text available
    Text: T—42—11—-09' MB 66000V H Silicon Gate CMOS LSI The Fujitsu C -8 0 0 0 V H M B 6 6 0 0 0 V H Series is a very highly integrated, low power and high speed, gate array L S I fabricated w ith silicon gate C M O S technol­ ogy. The array consists o f 8 0 0 0 internal basic cells (2


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    T--42--11--0 6000V J22833 PDF

    CG51364

    Abstract: CG51284 CG51114 CG51754 CG51214 CG51484 CG51654 fujitsu asic quad design motive
    Text: November 1995 Edition 1.5 DATA SHEET CG51/CE51 SERIES 3V, 0.50 MICRON HIGH PERFORMANCE/LOW POWER CMOS GATE ARRAYS DESCRIPTION The Fujitsu CG51/CE51 is a series of ultra high performance CMOS gate arrays. The CG51 is a high density Sea-of-Gates array for applications requiring high levels of integration or low


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    CG51/CE51 Th5431 ASIC-DS-20084-11/95 CG51364 CG51284 CG51114 CG51754 CG51214 CG51484 CG51654 fujitsu asic quad design motive PDF

    6 input or gate

    Abstract: t177 SLA847 986 t04 B8237 B8250 Series A138G2 19275 resistor ssc300 S-MOS asic
    Text: S-H 0 S SYSTEMS INC SbE » • 7ei3StiOti ÜDDlM'ia 076 «SIIO SLA8000 HIGH SPEED CMOS GATE ARRAY ■ DESCRIPTION The SLA8000 Series consists of a group of 13 high speed, sea-of-gates CMOS gate arrays. The series is fabricated utilizing our state-of-the-art 1.2 micron silicon gate technology. Gate counts range from 5K to 80K


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    SLA8000 SLA8000 SLA827S SLA837S SLA847S SLA860S SLA872S SLA890S SLA86ES 6 input or gate t177 SLA847 986 t04 B8237 B8250 Series A138G2 19275 resistor ssc300 S-MOS asic PDF

    fujitsu cg10

    Abstract: No abstract text available
    Text: 31E T> E3 3 7 4 = ^ 2 0013405 Ö S 3 Ffll FUJITSU MICROELECTRONICS CMOS ASIC T ' W' b o CG10 Gate Array Device Description Device Name Maximum Number of Signal Pins2 Cell Propagation Delay 2-input Gate Equivalency1 108 3,256 gates CG10272 CG 10342 4,032 gates


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    CG10272 CG10692 CG10103 CG10133 G10342 G10133 fujitsu cg10 PDF

    CG10492

    Abstract: CG10692 cg10572 CG10342 CG10 CG10272
    Text: CMOS ASIC CG10 Gate Array Device Description Device Name CG10272 Maximum Number of Signal Pins2 Cell Propagation Delay 2-input Gate Equivalency1 108 3,256 gates CG 10342 4,032 gates CG 10492 5,572 gates CG10572 6,510 gates Input: Normal buffer Clock driver


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    CG10272 CG10342 CG10692 CG10103 CG10133 CG10272 CG10342 CG10492 CG10572 CG10692 CG10492 cg10572 CG10 PDF

    CS91

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS06-20208-3Ea Semicustom CMOS Standard cell array CS91 Series • DESCRIPTION The CS91 series 0.11 m CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 48 million gates which have a gate delay time of 16


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    DS06-20208-3Ea CS91 PDF

    CS91

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20208-1E Semicustom CMOS Standard cell array CS91 Series • DESCRIPTION The CS91 series 0.11 µm CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 48 million gates which have a gate delay time of 16


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    DS06-20208-1E F0207 CS91 PDF

    CG31164

    Abstract: CG31 fujitsu CG31134 fujitsu gate array T-90-60
    Text: FUJITSU MICR OELECTRONICS 31E ]> Bi BTMTTbS 0 0 1 3 3 ^ b O F M I CMOS ASIC T-io-w - r - * # - IM ? CG31 Sea-of-Gates Array Device Description Device Name 2-Input Gate Equivalency1 CG31134 130,720 gates


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    CG31134 CG31164 CG31164 T-90-60 CG31 fujitsu fujitsu gate array PDF

    TEMIC PLD

    Abstract: PRU10 PRD8 buffer 8x Structure of D flip-flop DFFSR AOI222 AOI2223 AOI2223H AOI222H MH1099
    Text: MH1 1.6 Million gates Sea of Gates / Embedded Arrays 1. Description The MH1 Series Gate Array and Embedded Array families from TEMIC are fabricated in a 0.35µ CMOS process, with up to 3 levels of metal. This family features arrays with up to 1.6 million routable gates and 600 pins. The


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    B8228

    Abstract: No abstract text available
    Text: kfoEC S 6 Í?9C S-MOS S Y T E M ASIC S Preliminary A Seiko Epson Affiliate SLA10000 AUGUST 1990 HIGH SPEED CMOS GATE ARRAYS DESCRIPTION FEATURES The S-MOS SLA10000 series is a channeMess gate • .76 micron drawn channel length N-Channel array manufactured on S-MOS’ state-of-the-art 0.8


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    SLA10000 SLA10000 B8228 PDF

    T157WG

    Abstract: S-MOS navnet A138G2 t177 4-bit full adder using nand gates and 3*8 decoder 6 input or gate SLA1024 T161RE
    Text: S-M 0 S S Y S T E M S INC 5bE J> m 7 ci3 Z eÏQ'l GG01522 fc.35 H S I 1 0 SLA1 OOOO Series HIGH SPEED CMOS GATE ARRAYS • DESCRIPTION The S-MOS SLA10000 series is a channel-less gate array manufactured on S-MOS’ state-of-the-art 0.8 micron double-metal SiCMOS process. The series consists of 11 arrays ranging from 9,000 to 101,800 usable gates and


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    GG01522 SLA10000 SSC5000 B8259 B8237 B82284 B8255 T157WG S-MOS navnet A138G2 t177 4-bit full adder using nand gates and 3*8 decoder 6 input or gate SLA1024 T161RE PDF

    CG51754

    Abstract: fujitsu asic CE51654 CG51114 CG51284 CG51364 CG51484 CG51214 CG51654 CG-51
    Text: cP FUJI' Novem ber 1995 Edition 1.5 DATA SHEET = - ' CG51/CE51 SERIES 3V, 0.50 MICRON HIGH PERFORMANCE/LOW POWER CMOS GATE ARRAYS DESCRIPTION The Fujitsu CG51/CE51 is a series of ultra high performance CMOS gate arrays. The CG51 is a high density Sea-of-Gates


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    CG51/CE51 CG51754 fujitsu asic CE51654 CG51114 CG51284 CG51364 CG51484 CG51214 CG51654 CG-51 PDF

    fujitsu cg10

    Abstract: transistor H6C cg10572 CG10692 CG10492 CG10272 DIP-48P-MOI SQFP64 LCC64 CG10342
    Text: cP FUJITSU May 1990 Edition 1.0 _ PRODUCT PROFILE - CG 10 Series 0.8-micron CMOS Gate Arrays DESCRIPTION The CG10 series of 0.8-m icron CMOS gate arrays is a highly integrated low-power, ultra high-speed product fam ily that derives its enhanced performance and increased user flexibility from the use of a system-proven, dual-colum n gate structure and 2-layer


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    208C-A02 208-LEAD PGA-208C-A02) 9999999999999i fujitsu cg10 transistor H6C cg10572 CG10692 CG10492 CG10272 DIP-48P-MOI SQFP64 LCC64 CG10342 PDF

    transistor bL P09

    Abstract: MB625xxx mb62xxxx mb620 transistor phl 218 MB623xxx mb625 MB624xxx N4KD FPT-70P-M
    Text: FUJITSU MIC R OE LE CT RON IC S 23E D 374=17132 0 0 1 0 2 5 3 7 _ F U JITSU T - 4 2 - 4 U UHB SERIES 1.5// CMOS GATE ARRAYS K _ MB62XXXX MB60XXXX September 1988 Edition 1.1 DESCRIPTION The UHB series of 1.5-mlcron CMOS gate arrays Is a highly Integrated low-power, ultra high-speed product family that derives Its


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    MB62XXXX MB60XXXX T-160P F160001S-2C 40-LEAD OIP-40P-M U1M1T60 D40008S-1Ç transistor bL P09 MB625xxx mb620 transistor phl 218 MB623xxx mb625 MB624xxx N4KD FPT-70P-M PDF

    CG31204

    Abstract: PGA-208 CG31 series fujitsu cg10 CG31 fujitsu pga208 cmos gate array cg31
    Text: iR N 1 0 'M l September 1990 Edition 1.0 PRODUCT INFORMATION_ FUJITSU CG31 Series 0.8-micron CMOS Gate Arrays DESCRIPTION The CG31 series of 0.8-p.m CMOS gate arrays are currently available in three device types with from 120K to 200K gates. These arrays achieve the ultra fast speed of 0.37 ps per gate. Thanks to the channelless sea-of-gates


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    CG31134 CG31164 CG31204 PGA-135 PGA-155 PGA-179 PGA-208 PGA-223 PGA-256 PGA-299 PGA-208 CG31 series fujitsu cg10 CG31 fujitsu pga208 cmos gate array cg31 PDF