74LS382
Abstract: C1602A C350AVB 74LS08 fan-in 74ls517 74LS556 74LS183 74LS86 full adder MB64H 74LS381
Text: ix u jD U Lu ra n ctiu F U JIT S U _ mmm CWiOS Gate Array GENERAL INFORMATION The Fujitsu CMOS gate array family consists of twentyeight devlcs types which are fabricated with advanced silicon gate CMOS technology. And more than 14devlc«s are coming. Fujitsu CMOS gate array are configured In a
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veF178
74LS181
74LS190
F191H
74LS191
74LS192
74LS193
74LS194A
74LS195A
74S260
74LS382
C1602A
C350AVB
74LS08 fan-in
74ls517
74LS556
74LS183
74LS86 full adder
MB64H
74LS381
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CG46533
Abstract: CG46713 CE46F10 CE46F20 CE46F30 CE46F40 CE46F50 CE46F60 CE46F70 BGA-35
Text: November 1995 Edition 1.5 DATA SHEET CG/CE46 0.65 Micron High Performance, Low Power CMOS Gate Arrays Description The Fujitsu CG46 is a high performance, 0.65 µm drawn channel length, digital CMOS gate array family. The CE46 is a 0.65 µm drawn channel length, digital CMOS embedded gate array
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CG/CE46
ASIC-DS-20084-11/95
CG46533
CG46713
CE46F10
CE46F20
CE46F30
CE46F40
CE46F50
CE46F60
CE46F70
BGA-35
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CG46533
Abstract: . rp 700 pc -24 CG46833 CG46134 SQFP100 CE46F10 CE46F20 CE46F30 CE46F40 CE46F50
Text: FUJITSU Novem ber 1995 Edition 1.5 DATA SHEET '• CG/CE46 0.65 Micron High Performance, Low Power CMOS Gate Arrays Description The Fujitsu CG46 is a high performance, 0.65 im drawn channel length, digital CMOS gate array family. The CE46 is a 0.65 urn drawn channel length, digital CMOS embedded gate array
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CG/CE46
CG/CE46
374175b
001173b
CG46533
. rp 700 pc -24
CG46833
CG46134
SQFP100
CE46F10
CE46F20
CE46F30
CE46F40
CE46F50
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CG46713
Abstract: CG46194 CG46533 CG46134 CG46104
Text: FUJITSU Novem ber 1995 Edition 1.5 DATA S H E E T : CG/CE46 0.65 Micron High Performance, Low Power CMOS Gate Arrays Description The Fujitsu CG46 is a high performance, 0.65 |im drawn channel length, digital CMOS gate array family. The CE46 is a 0.65 urn drawn channel length, digital CMOS embedded gate array
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CG/CE46
CG46713
CG46194
CG46533
CG46134
CG46104
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C350AVB
Abstract: full adder using Multiplexer IC 74150 74LS382 74ls69 T2D 7N IC 74ls147 pin details 74LS396 MB652xxx 651XX 74LS86 full adder
Text: FUJITSU MICROELECTRONICS F U JIT S U wmmm 7flC D B 37MT7bH □D03c]4b 3 • JZ CMOS Gate Array GENERAL INFORMATION The Fujitsu CM O S gate array fam ily consists of tw en tyeight device types which are fabricated w ith advanced silicon gate CMOS technology. And more than 14 devices
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37MT7bH
74LS175
74LS181
74LS183
74LS190
74LS191
74LS192
74LS193
74LS194A
74LS195A
C350AVB
full adder using Multiplexer IC 74150
74LS382
74ls69
T2D 7N
IC 74ls147 pin details
74LS396
MB652xxx
651XX
74LS86 full adder
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DS06-20110-5E
Abstract: CE81 0.18-um CMOS standard cell library inverter
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20110-5E Semicustom CMOS Embedded array CE81 Series • DESCRIPTION The CE81 series 0.18 µm CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 34 million gates which have a gate delay time of 12 ps, resulting in both integration
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DS06-20110-5E
F0612
DS06-20110-5E
CE81
0.18-um CMOS standard cell library inverter
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CE81
Abstract: floor plan for 4 bit adder 722k
Text: FUJITSU MICROELECTRONICS DATA SHEET DS06-20110-5Ea Semicustom CMOS Embedded array CE81 Series • DESCRIPTION The CE81 series 0.18 m CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 34 million gates which have a gate delay time of 12 ps, resulting in both integration
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DS06-20110-5Ea
CE81
floor plan for 4 bit adder
722k
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QFP-240
Abstract: QFP240 CG61304P LQFP100 LQFP120 LQFP144 LQFP176 LQFP48 LQFP64 LQFP80
Text: New products CG61P CMOS Gate Array CG61P Series This series features the first gate array incorporating an analog PLL. Four frames are available in a capacity range from 70K to 300K: two types are provided for analog PLLs of a low-frequency version 90 to 160 MHz ;
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CG61P
CG61P
48-pin)
BCC48
FBGA48
QFP-240
QFP240
CG61304P
LQFP100
LQFP120
LQFP144
LQFP176
LQFP48
LQFP64
LQFP80
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t2d 64
Abstract: lu1414 fdn 156 MB631XXX LU18 mb633
Text: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE AU Series CMOS Gate Arrays DESCRIPTION The AU series of 1.2 Jim CMOS gate arrays, available in eight device types with from 10K to 100K gates, achieves the ultra fast speed of 0.6 ns per gate. Thanks to the channel-free structure of the AU gate array, AU basic cells can be used for logic cells,
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Untitled
Abstract: No abstract text available
Text: T—42—11—-09' MB 66000V H Silicon Gate CMOS LSI The Fujitsu C -8 0 0 0 V H M B 6 6 0 0 0 V H Series is a very highly integrated, low power and high speed, gate array L S I fabricated w ith silicon gate C M O S technol ogy. The array consists o f 8 0 0 0 internal basic cells (2
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T--42--11--0
6000V
J22833
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CG51364
Abstract: CG51284 CG51114 CG51754 CG51214 CG51484 CG51654 fujitsu asic quad design motive
Text: November 1995 Edition 1.5 DATA SHEET CG51/CE51 SERIES 3V, 0.50 MICRON HIGH PERFORMANCE/LOW POWER CMOS GATE ARRAYS DESCRIPTION The Fujitsu CG51/CE51 is a series of ultra high performance CMOS gate arrays. The CG51 is a high density Sea-of-Gates array for applications requiring high levels of integration or low
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CG51/CE51
Th5431
ASIC-DS-20084-11/95
CG51364
CG51284
CG51114
CG51754
CG51214
CG51484
CG51654
fujitsu asic
quad design motive
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6 input or gate
Abstract: t177 SLA847 986 t04 B8237 B8250 Series A138G2 19275 resistor ssc300 S-MOS asic
Text: S-H 0 S SYSTEMS INC SbE » • 7ei3StiOti ÜDDlM'ia 076 «SIIO SLA8000 HIGH SPEED CMOS GATE ARRAY ■ DESCRIPTION The SLA8000 Series consists of a group of 13 high speed, sea-of-gates CMOS gate arrays. The series is fabricated utilizing our state-of-the-art 1.2 micron silicon gate technology. Gate counts range from 5K to 80K
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SLA8000
SLA8000
SLA827S
SLA837S
SLA847S
SLA860S
SLA872S
SLA890S
SLA86ES
6 input or gate
t177
SLA847
986 t04
B8237
B8250 Series
A138G2
19275 resistor
ssc300
S-MOS asic
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fujitsu cg10
Abstract: No abstract text available
Text: 31E T> E3 3 7 4 = ^ 2 0013405 Ö S 3 Ffll FUJITSU MICROELECTRONICS CMOS ASIC T ' W' b o CG10 Gate Array Device Description Device Name Maximum Number of Signal Pins2 Cell Propagation Delay 2-input Gate Equivalency1 108 3,256 gates CG10272 CG 10342 4,032 gates
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CG10272
CG10692
CG10103
CG10133
G10342
G10133
fujitsu cg10
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CG10492
Abstract: CG10692 cg10572 CG10342 CG10 CG10272
Text: CMOS ASIC CG10 Gate Array Device Description Device Name CG10272 Maximum Number of Signal Pins2 Cell Propagation Delay 2-input Gate Equivalency1 108 3,256 gates CG 10342 4,032 gates CG 10492 5,572 gates CG10572 6,510 gates Input: Normal buffer Clock driver
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CG10272
CG10342
CG10692
CG10103
CG10133
CG10272
CG10342
CG10492
CG10572
CG10692
CG10492
cg10572
CG10
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CS91
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS DATA SHEET DS06-20208-3Ea Semicustom CMOS Standard cell array CS91 Series • DESCRIPTION The CS91 series 0.11 m CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 48 million gates which have a gate delay time of 16
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DS06-20208-3Ea
CS91
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CS91
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20208-1E Semicustom CMOS Standard cell array CS91 Series • DESCRIPTION The CS91 series 0.11 µm CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 48 million gates which have a gate delay time of 16
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DS06-20208-1E
F0207
CS91
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CG31164
Abstract: CG31 fujitsu CG31134 fujitsu gate array T-90-60
Text: FUJITSU MICR OELECTRONICS 31E ]> Bi BTMTTbS 0 0 1 3 3 ^ b O F M I CMOS ASIC T-io-w - r - * # - IM ? CG31 Sea-of-Gates Array Device Description Device Name 2-Input Gate Equivalency1 CG31134 130,720 gates
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CG31134
CG31164
CG31164
T-90-60
CG31 fujitsu
fujitsu gate array
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TEMIC PLD
Abstract: PRU10 PRD8 buffer 8x Structure of D flip-flop DFFSR AOI222 AOI2223 AOI2223H AOI222H MH1099
Text: MH1 1.6 Million gates Sea of Gates / Embedded Arrays 1. Description The MH1 Series Gate Array and Embedded Array families from TEMIC are fabricated in a 0.35µ CMOS process, with up to 3 levels of metal. This family features arrays with up to 1.6 million routable gates and 600 pins. The
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B8228
Abstract: No abstract text available
Text: kfoEC S 6 Í?9C S-MOS S Y T E M ASIC S Preliminary A Seiko Epson Affiliate SLA10000 AUGUST 1990 HIGH SPEED CMOS GATE ARRAYS DESCRIPTION FEATURES The S-MOS SLA10000 series is a channeMess gate • .76 micron drawn channel length N-Channel array manufactured on S-MOS’ state-of-the-art 0.8
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SLA10000
SLA10000
B8228
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T157WG
Abstract: S-MOS navnet A138G2 t177 4-bit full adder using nand gates and 3*8 decoder 6 input or gate SLA1024 T161RE
Text: S-M 0 S S Y S T E M S INC 5bE J> m 7 ci3 Z eÏQ'l GG01522 fc.35 H S I 1 0 SLA1 OOOO Series HIGH SPEED CMOS GATE ARRAYS • DESCRIPTION The S-MOS SLA10000 series is a channel-less gate array manufactured on S-MOS’ state-of-the-art 0.8 micron double-metal SiCMOS process. The series consists of 11 arrays ranging from 9,000 to 101,800 usable gates and
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GG01522
SLA10000
SSC5000
B8259
B8237
B82284
B8255
T157WG
S-MOS navnet
A138G2
t177
4-bit full adder using nand gates and 3*8 decoder
6 input or gate
SLA1024
T161RE
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CG51754
Abstract: fujitsu asic CE51654 CG51114 CG51284 CG51364 CG51484 CG51214 CG51654 CG-51
Text: cP FUJI' Novem ber 1995 Edition 1.5 DATA SHEET = - ' CG51/CE51 SERIES 3V, 0.50 MICRON HIGH PERFORMANCE/LOW POWER CMOS GATE ARRAYS DESCRIPTION The Fujitsu CG51/CE51 is a series of ultra high performance CMOS gate arrays. The CG51 is a high density Sea-of-Gates
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CG51/CE51
CG51754
fujitsu asic
CE51654
CG51114
CG51284
CG51364
CG51484
CG51214
CG51654
CG-51
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fujitsu cg10
Abstract: transistor H6C cg10572 CG10692 CG10492 CG10272 DIP-48P-MOI SQFP64 LCC64 CG10342
Text: cP FUJITSU May 1990 Edition 1.0 _ PRODUCT PROFILE - CG 10 Series 0.8-micron CMOS Gate Arrays DESCRIPTION The CG10 series of 0.8-m icron CMOS gate arrays is a highly integrated low-power, ultra high-speed product fam ily that derives its enhanced performance and increased user flexibility from the use of a system-proven, dual-colum n gate structure and 2-layer
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208C-A02
208-LEAD
PGA-208C-A02)
9999999999999i
fujitsu cg10
transistor H6C
cg10572
CG10692
CG10492
CG10272
DIP-48P-MOI
SQFP64
LCC64
CG10342
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transistor bL P09
Abstract: MB625xxx mb62xxxx mb620 transistor phl 218 MB623xxx mb625 MB624xxx N4KD FPT-70P-M
Text: FUJITSU MIC R OE LE CT RON IC S 23E D 374=17132 0 0 1 0 2 5 3 7 _ F U JITSU T - 4 2 - 4 U UHB SERIES 1.5// CMOS GATE ARRAYS K _ MB62XXXX MB60XXXX September 1988 Edition 1.1 DESCRIPTION The UHB series of 1.5-mlcron CMOS gate arrays Is a highly Integrated low-power, ultra high-speed product family that derives Its
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MB62XXXX
MB60XXXX
T-160P
F160001S-2C
40-LEAD
OIP-40P-M
U1M1T60
D40008S-1Ç
transistor bL P09
MB625xxx
mb620
transistor phl 218
MB623xxx
mb625
MB624xxx
N4KD
FPT-70P-M
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CG31204
Abstract: PGA-208 CG31 series fujitsu cg10 CG31 fujitsu pga208 cmos gate array cg31
Text: iR N 1 0 'M l September 1990 Edition 1.0 PRODUCT INFORMATION_ FUJITSU CG31 Series 0.8-micron CMOS Gate Arrays DESCRIPTION The CG31 series of 0.8-p.m CMOS gate arrays are currently available in three device types with from 120K to 200K gates. These arrays achieve the ultra fast speed of 0.37 ps per gate. Thanks to the channelless sea-of-gates
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CG31134
CG31164
CG31204
PGA-135
PGA-155
PGA-179
PGA-208
PGA-223
PGA-256
PGA-299
PGA-208
CG31 series
fujitsu cg10
CG31 fujitsu
pga208
cmos gate array cg31
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