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    "32K X 8" SRAM PLCC Search Results

    "32K X 8" SRAM PLCC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    TN80C186XL-12 Rochester Electronics LLC Rochester Manufactured 80C186, Microprocessor, 68 PLCC Package, Industrial Temp spec. Visit Rochester Electronics LLC Buy
    N80C152JC-1-G Rochester Electronics LLC Rochester Manufactured 80C152, 8 bit Microcontroller, 68 PLCC Package, Commercial Temp spec. Visit Rochester Electronics LLC Buy
    EN80C186XL-12 Rochester Electronics LLC Rochester Manufactured 80C186XL, Microprocessor, 68 PLCC Package, Industrial Temp spec. Visit Rochester Electronics LLC Buy
    IN80C188-16-G Rochester Electronics LLC Rochester Manufactured 80C188, Microprocessor, 68 PLCC Package, Industrial Temp spec. Visit Rochester Electronics LLC Buy

    "32K X 8" SRAM PLCC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    a1294

    Abstract: No abstract text available
    Text: M62486R VERY FAST CMOS 32K x 9 CACHE BRAM ADVANCE DATA 32K x 9 CMOS SYNCHRONOUS BURST SRAM FAST CYCLE TIME 15ns FAST ACCESS TIMES: 8, 9ns Max ON-BOARD BURST COUNTER INPUT REGISTERS ADDR.,DATA,CTRL SELF-TIMED WRITE CYCLE THREE STATE COMMON I/O HIGH OUTPUT DRIVE CAPABILITY


    Original     		PDF M62486R PLCC44 M62486R a1294

    DS1230

    Abstract: EEPROM 28256 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC
    Text: DS1230Y/AB 256k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles


    Original     		PDF DS1230Y/AB DS1230Y) DS1230AB) 28-pin DS1230 EEPROM 28256 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC

    EEPROM 28256

    Abstract: SRAM 34 pin 28256 eeprom 28256 DS9034PC 34-PIN DS1230 DS1230W DS1230W-150 backup protect pinout
    Text: DS1230W 3.3V 256k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles


    Original     		PDF DS1230W 28-pin EEPROM 28256 SRAM 34 pin 28256 eeprom 28256 DS9034PC 34-PIN DS1230 DS1230W DS1230W-150 backup protect pinout

    EEPROM 28256

    Abstract: DS1730Y-150 DS1730Y-200
    Text: DS1730Y DS1730Y 3–Volt Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAM or EEPROM


    Original     		PDF DS1730Y DS1730Y PLCC34P DS34PIN EEPROM 28256 DS1730Y-150 DS1730Y-200

    DS1230

    Abstract: DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC
    Text: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles


    Original     		PDF DS1230Y/AB DS1230Y) DS1230AB) 28-pin DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC

    CY7C199

    Abstract: EME-6300H 16MB SRAM
    Text: Qualification Report December 1995, QTP# 94412 Version 2.0 256K SRAM, R3 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C199 32K x 8 Static RAM PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part


    Original     		PDF CY7C199 7C199D Dec/1995 Jan/1995 JEDEC22, --40C CY7C199 EME-6300H 16MB SRAM

    28256 eeprom

    Abstract: DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC
    Text: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles


    Original     		PDF DS1230Y/AB DS1230Y) DS1230AB) 28-pin 28256 eeprom DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC

    28256 eeprom

    Abstract: DALLAS SEMICONDUCTOR Ds1230 EEPROM 28256 dallas ds1230 a7 surface mount diode DS1230Y-200 DALLAS DS1230Y-70 DS1230Y-85 DQ213 DS1230AB
    Text: DS1230Y/AB DS1230Y/AB 256K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • DIP-package devices directly replace 32K x 8 volatile static RAM or EEPROM


    Original     		PDF DS1230Y/AB DS1230YL/ABL DS34PIN 28256 eeprom DALLAS SEMICONDUCTOR Ds1230 EEPROM 28256 dallas ds1230 a7 surface mount diode DS1230Y-200 DALLAS DS1230Y-70 DS1230Y-85 DQ213 DS1230AB

    EEPROM 28256

    Abstract: 34-PIN DS1230 DS1230W DS1230W-100 DS1230W-150 DS9034PC 740-MIL SRAM 34 pin
    Text: DS1230W 3.3V 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory


    Original     		PDF DS1230W 100ns 28-pin EEPROM 28256 34-PIN DS1230 DS1230W DS1230W-100 DS1230W-150 DS9034PC 740-MIL SRAM 34 pin

    EEPROM 28256

    Abstract: DS1230AB CI 740 DS1230 DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-85 DS9034PC
    Text: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM,


    Original     		PDF DS1230Y/AB DS1230Y) DS1230AB) 28-pin EEPROM 28256 DS1230AB CI 740 DS1230 DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-85 DS9034PC

    DS1230Y-200 DALLAS

    Abstract: DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS9034PC
    Text: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM,


    Original     		PDF DS1230Y/AB DS1230Y) DS1230AB) 28-pin DS1230Y-200 DALLAS DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS9034PC

    DS1230Y-120-IND

    Abstract: DS1230Y-85
    Text: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM,


    Original     		PDF DS1230Y/AB DS1230Y) DS1230AB) 28-pin 56-G0003-001A1 DS1230YP-100 DS1230YP-70IND DS1230Y-120-IND DS1230Y-85

    MT5LC2568DJ

    Abstract: No abstract text available
    Text: MT5LC2568 32K X 8 SRAM M IC R O N SRAM 32Kx 8 SRAM LOW VOLTAGE FEATURES PIN ASSIGNMENT (Top View • All I/O pins are 5V tolerant • High speed: 12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V* power supply


    OCR Scan     		PDF MT5LC2568 28-Pin acces69 160-PIN MT5LC2568DJ

    Untitled

    Abstract: No abstract text available
    Text: S G S -1 H O M S O N t ÿ i IlD !ÄIILI(Ä ffl(gS M62486R VERY FAST CMOS 32K x 9 CACHE BRAM ADVANCE DATA • 32K x 9 CMOS SYNCHRONOUS BURST SRAM > FAST CYCLE TIME 15ns ■ FAST ACCESS TIMES: 8 ,9ns Max ■ ON-BOARD BURST COUNTER ■ INPUT REGISTERS (ADDR.,DATA,CTRL


    OCR Scan     		PDF M62486R M62486R A0-A14 DQ2486R PLCC44 PLCC44

    Untitled

    Abstract: No abstract text available
    Text: DS1230Y/AB DALLAS SEMICONDUCTOR DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • DIP-package devices directly replace 32K x 8 volatile


    OCR Scan     		PDF DS1230Y/AB DS1230Y) DS1230AB) 28-pin 68-pin packag02 DS1230Y/AB 34-PIN

    fm 4213 ic

    Abstract: DS00026
    Text: lY lW MX66V256 Super Low Power 32k x 8 CMOS SRAM DESCRIPTION FEATURES The MX66V256 is a high performance, low power CMOS Static Random Access Memory organized as 32,768 words by 8 bits and operates from a wide range of supply voltage. Advanced CMOS technology and circuit techniques


    OCR Scan     		PDF /100ns 200ns MX27L512 32-PIN 28-PIN fm 4213 ic DS00026

    Untitled

    Abstract: No abstract text available
    Text: DS1730Y/YLPM DALLAS SEMICONDUCTOR DS1730Y/YLPM 3 Volt Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of V cc • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAMs or EEPROMs


    OCR Scan     		PDF DS1730Y/YLPM 28-pin DS1730Y) 2bl4130 DD10771 DS1730YLPM 34-PIN 68-pin

    DS1230Y-200 DALLAS

    Abstract: EEPROM 28256 DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS1230Y-85
    Text: DS1230Y/AB 256k Nonvolatile SRAM ww w.dalsem i.com PIN ASSIGNMENT FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles


    OCR Scan     		PDF DS1230Y/AB DS1230Y) DS1230AB) 28-pin DS1230Y/AB DS1230Y-200 DALLAS EEPROM 28256 DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS1230Y-85

    Untitled

    Abstract: No abstract text available
    Text: DS1330YLPM/ABLPM PRODUCT PREVIEW DS1330YLPM/ABLPM DALLAS SEMICONDUCTOR 256K Nonvolatile SRAM with Power Monitors PIN ASSIGNMENT FEATURES • Data retention in the absence of Vcc • Data is automatically protected during power loss • Replaces 32K x 8 volatile static RAM or EEPROM


    OCR Scan     		PDF DS1330YLPM/ABLPM DS1330YLPM) DS1330ABLPM) DS1330YLPM/ABLPM 68-pin

    DS1630AB-100

    Abstract: DS1630AB100
    Text: DS1630Y/AB DALLAS SEMICONDUCTOR DS1630Y/AB Partitionable 256K NV SRAM FEATURES • PIN ASSIGNMENT 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 32K x EEPROM 8 volatile static RAM or


    OCR Scan     		PDF DS1630Y/AB DS1630Y/AB DS1630Y) DS163 34-PIN DS1630AB-100 DS1630AB100

    3610 dallas

    Abstract: No abstract text available
    Text: D S1630Y/AB DALLAS DS1630Y/AB Partitionable 256K NV SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAM or


    OCR Scan     		PDF S1630Y/AB DS1630Y/AB DS1630Y/AB 34-PIN 66-pin 34P-SMT-3 HIS-40001-04 PLCC-34-SMT DS34PIN-PLC 3610 dallas

    Untitled

    Abstract: No abstract text available
    Text: DS1730Y/YLPM DALLAS SEMICONDUCTOR DS1730Y/YLPM 3 Volt Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc Vcc • Data is automatically protected during power loss WE • Directly replaces 32K x 8 volatile static RAMs or EEPROMs


    OCR Scan     		PDF DS1730Y/YLPM 28-pin DS1730Y) source970 68-pin PLCC34P-SMT-3 HIS-40001-04 DS34PIN-PLC

    5bl41

    Abstract: No abstract text available
    Text: DS1730Y DALLAS SEMICONDUCTOR DS1730Y 3-V olt Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAM or


    OCR Scan     		PDF DS1730Y 28-pin DS1730Y 34-PIN PLCC34P-SMT-3 HIS-40001-04 PLCC-34-SM DS34PIN-PLC 5bl41

    Untitled

    Abstract: No abstract text available
    Text: MX66X256 m A Super Low Power 32k x 8 CMOS SRAM DESCRIPTION FEATURES Ql Wide supply voltage range - CMOS Input level 0.8Vcc/0.2Vcc 5.5 V to 1.5V - TTL Input level (3V/0V) 4.5 V to 1.5V S Super low power consumption - 5V operation 60mA (Max.) write current


    OCR Scan     		PDF /100ns 200ns MX27L512 32-PIN 28-PIN